The Korean Journal of Ceramics

한국세라믹학회 (The Korean Ceramic Society)
권호 표지

Chemical Vapor Deposition of Silicon Carbide Thin Films Using the Single Precursor 1,3-Disilabutane

  • Lee, Kyung-Won (Korea Research Institute of Chemical Technology Yusong) ;
  • Boo, Jin-Hyo (Korea Research Institute of Chemical Technology Yusong) ;
  • Yu, Kyu-Sang (Korea Research Institute of Chemical Technology Yusong) ;
  • Kim, Yunsoo (Korea Research Institute of Chemical Technology Yusong)
  • 발행 : 1997.09.01
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초록

Epitaxial films of cubic silicon carbide (3C-SiC, $\beta$-SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$, at temperatures 900~$100^{\circ}C$. The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.

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참고문헌

  1. J. Mater. Res. v.4 no.2 Characterization of Diamond Thin Films: Diamond Phase Identification, Surface Morphology and Defect Structures B. E. Williams;J. T. Glass
  2. Appl. Phys. Lett. v.66 no.5 Heteroepitaxial Growth of Smooth and Continuous Diamond Thin Films on Silicon Substrates via High Quality Silicon Carbide Buffer Layers H. Kawarada;T. Suesada;H. Nagasawa
  3. IEEE Trans. Electron Devices v.ED-36 no.9 Optimum Semiconductors for High-Power Electronics K. Shenai;R. S. Scott;B. J. Baliga
  4. Appl. Phys. Lett. v.49 no.7 Epitaxial Growth of 3C-SiC on Si by Low-pressure Chemical Vapor Deposition Y. Fujiwara;E. Sakuma;S. Misawa,;K. Endo;S. Yoshida
  5. Korean Patent Appl. No. 92-4705 I. N. Jung;G.-H. Lee;C.-H. Song
  6. Chem. Mater. v.7 no.4 Growth of Cubic SiC Films Using 1,3-Disilabutane J. H. Boo;K.-S. Yu;Y. Kim;S. H. Yeon;I. N. Jung
  7. J. Electrochem. Soc. v.133 no.4 Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE A. Ishizaka;Y. Shiraki
  8. Jpn. J. Appl. Phys. v.31 no.11B Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface T. Yoshinobu;H. Mitsui;Y. Tarui;T. Fuyuki;H. Matsunami
  9. Appl. Phys. Lett. v.60 no.14 Single-crystalline Epitaxial Cubic SiC Films Grown on (100) Si at 750℃ by Chemical Vapor Deposition I. Golecki;F. Reidinger;J. Marti
  10. J. Electrochem. Soc. v.139 no.12 Low-Temperature Growth of 3C-SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source Material K. Takahashi;S. Nishino;J. Saraie
  11. Appl. Phys. Lett. v.63 no.24 Growth of Crystalline 3C-SiC on Si at Reduced Temperatures by Chemical Vapor Deposition from Silacyclobutane A. J. Steckl;C. Yuan;J. P. Li;M. J. Loboda
  12. J. Phys. Chem. v.97 no.49 Kinetics of SiC CVD: Surface Decomposition of Silacyclobutane and Methylsilane A. D. Johnson;J. Perrin;J. A. Mucha;D. E. Ibbotson