한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Ge 농도에 따른 SGOI MOSFET의 전기적 특성

Electrical characteristics of SGOI MOSFET with various Ge mole fractions

  • 오준석 (광운대학교 전자재료공학과) ;
  • 김민수 (광운대학교 전자재료공학과) ;
  • 정종완 (세종대학교 나노신소재공학과) ;
  • 이영희 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과)
  • 발행 : 2009.06.18
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초록

SGOI MOSFETs with various Ge mole fractions were fabricated and compared to the SOI MOSFET. SGOI MOSFETs have a lager drain current and higher effective mobility than the SOI MOSFET as increased Ge mole fractions. The lattice constant difference causes lattice mismatch between the SiGe layer and the top-Si layer during the top-Si layer growth. However, SGOI MOSFETs have a lager leakage current at subthreshold region. Also, leakage current at subthreshold region increased with Ge mole fractions. This is attributable to the crystalline defects due to the lattice mismatch between the SiGe layer and the top-Si layer.

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