한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Ge 농도에 따른 SGOI (Silicon-Germanium-On-Insulator) 1T-DRAM의 메모리 특성

Memory characteristics of SGOI (Silicon-Germanium-On-Insulator) 1T-DRAM with various Ge mole fractions

  • 오준석 (광운대학교 전자재료공학과) ;
  • 김민수 (광운대학교 전자재료공학과) ;
  • 정종완 (세종대학교 나노신소재공학과) ;
  • 이영희 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 조현주 (광운대학교 전자재료공학과)
  • 발행 : 2009.06.18
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초록

SGOI 1T-DRAM cells with various Ge mole fractions were fabricated and compared to the SOI 1T-DRAM cell. SGOI 1T-DRAM cells have a higher leakage current than SOI 1T-DRAM cell at subthreshold region. The leakage current due to crystalline defects and interface states at Si/SiGe increased with Ge mole. This phenomenon causes sensing margin and the retention time of SGOI 1T-DRAMs decreased with increase of Ge mole fraction.

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