한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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- Pages.24-25
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- 2006
나노급 CMOSFET을 위한 SOI기판에 Doping된 B11을 이용한 Ni-Silicide의 열안정성 개선
Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET
- 정순연 (충남대학교) ;
- 오순영 (충남대학교) ;
- 김용진 (충남대학교) ;
- 이원재 (충남대학교) ;
- 장잉잉 (충남대학교) ;
- 종준 (충남대학교) ;
- 이세광 (충남대학교) ;
- 왕진석 (충남대학교) ;
-
이희덕
(충남대학교)
- Jung, Soon-Yen (Dept. of Electronics Engineering, Chungnam National University) ;
- Oh, Soon-Young (Dept. of Electronics Engineering, Chungnam National University) ;
- Kim, Yong-Jin (Dept. of Electronics Engineering, Chungnam National University) ;
- Lee, Won-Jae (Dept. of Electronics Engineering, Chungnam National University) ;
- Zhang, Ying-Ying (Dept. of Electronics Engineering, Chungnam National University) ;
- Zhong, Zhun (Dept. of Electronics Engineering, Chungnam National University) ;
- Li, Shi-Guang (Dept. of Electronics Engineering, Chungnam National University) ;
- Wang, Jin-Suk (Dept. of Electronics Engineering, Chungnam National University) ;
-
Lee, Hi-Deok
(Dept. of Electronics Engineering, Chungnam National University)
- 발행 : 2006.06.22
초록
In this study, Ni silicide on the SOI substrate doped B11 is proposed to improve thermal stability. The sheet resistance of Ni-silicide utilizing pure SOI substrate increased after the post-silicidation annealing at