한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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- Pages.22-23
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- 2006
양성자 조사법에 의한 PI-IGBT의 Turn-off 스위칭 특성 개선
Improvement of Turn-off Switching Characteristics of the PT-IGBT by Proton Irradiation
- Choi, Sung-Hwan (Kyungpook National Univ.) ;
- Lee, Yong-Hyun (Kyungpook National Univ.) ;
- Lee, Jong-Hun (Fairchild Semiconductor) ;
- Bae, Young-Ho (Uiduk Univ.)
- 발행 : 2006.06.22
초록
Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with