Transverse Piezoelectric Coefficient ($e_{31,f}$) of Thick PZT films Fabricated by Sol-Gel Method with Thicknesses, Electrode Shapes and Poling Process

Sol-Gel 법으로 제조된 후막 PZT의 두께, 전극형상 및 분극 공정에 따른 $e_{31,f}$ 특성

  • 박준식 (전자부품연구원 나노메카트로닉스센터) ;
  • 양성준 (전자부품연구원 나노메카트로닉스센터) ;
  • 박광범 (전자부품연구원 나노메카트로닉스센터) ;
  • 윤대원 (전자부품연구원 나노메카트로닉스센터) ;
  • 박효덕 (전자부품연구원 나노메카트로닉스센터) ;
  • 김승현 (이노스텍 (주) 기술연구소) ;
  • 강성군 (한양대학교 재료공학과) ;
  • 최태훈 (한국생산기술연구원 마이크로성형팀) ;
  • 이낙규 (한국생산기술연구원 마이크로성형팀) ;
  • 나경환 (한국생산기술연구원 마이크로성형팀)
  • Published : 2003.04.23

Abstract

Thick PZT films are required for the cases of micro actuators and sensors with high driving force, high breakdown voltage and high sensitivity, and so on. In this work, thick PZT films were fabricated by Sol-Gel multi-coating method. Total 8 types of samples using thick PZT films with thicknesses, about $1{\mu}m$ and $2{\mu}m$, and Pt top electrodes shapes for measuring transverse piezoelectric coefficient ($e_{31,f}$) were fabricated using MEMS processes. They were characterized by fabricated e31,f measurement system before and after poling. $e_{31,f}$ values of samples after poling were higher than before poling. Those of $2{\mu}m$ thick PZT films were also higher than $1{\mu}m$ thick PZT films. And those with long electrodes as top electrodes were also higher than shorter.

Keywords