Abstract
Germane-sillicide phase formation on S $i_{0.25}$G $e_{0.75}$ with Ni 100$\square$, Co 10$\square$/Ni 100$\square$ and Ni 50$\square$/Co 10$\square$/Ni 50$\square$ layer was studied by sheet resistance and Field Emission Scanning Electron Microscopy(FESEM). Thermal stability of nickel germane-silicide is found to be improved by sputtering Ni/Co/Ni on the SiGe. After annealing at 600, 650, $700^{\circ}C$, 30min., the nickel germane-silicide formed by Ni 50$\square$/Co 10$\square$/Ni 50$\square$ layer achieved a sheet resistance less than 17ohms/sq.(almost the same to the value before furnace annealing for 30min.) , while the process of the other two ways result in high sheet resistance and even sheet resistance fail due to Ge segregation.ion.
