Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2003.07b
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- Pages.1073-1076
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- 2003
Characteristic of InP/InGaAs HBT for Long Wavelength Application
장파장 응용을 위한 InP/InGaAs HBT의 광특성
Abstract
This paper shows the performance as a photodetector of InP/InGaAs HPT operated with a base bias and forntside optical injection through the emitter. InP/InGaAs HPT produced the high optical gain of about 16.2 where HPT is biased at Vc=1V, I
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