한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)

권호 표지

휘스톤브리지형 MR 센서제작 및 특성

Wheastone-bridge type MR sensors of Si(001)/NiO($300{\AA}$)/NiFe bilayer system

이원재 (한국전기연구원) ;
민복기 (한국전기연구원) ;
송재성 (한국전기연구원) ;

Lee, Won-Jae (Korea Electrotechnology Research Institute) ;
Min, Bok-Ki (Korea Electrotechnology Research Institute) ;
Song, Jae-Sung (Korea Electrotechnology Research Institute) ;
Park, Tae-Gone (Korea Electrotechnology Research Institute)

발행 : 2002.11.07

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초록

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in $45^{\circ}$ Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ was shown in the range of about ${\leq}{\pm}5$ Oe.

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