• 한국자기학회지
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• 제13권6호
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• pp.243-245
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• 2003

Si(001)기판 위에 길러진 거대 자기 저항을 가지는 Co/Cu 다층 자성 박막에서 관측된 특이한 GMR 효과를 기판과 박막사이의 경계면 효과를 도입한 간단한 모형으로 설명하였다. 이 모형과 실험으로부터 자기 상수들을 구하였으며, 얻어진 상수들을 다른 논문에서 보고되어진 값들과 비교하였다. 제시된 모형은 경계면에 의해 유도된 다수의 easy axes를 갖는 다른 GMR 물질에도 적용할 수 있으며, 이 모형을 이용하여 기판 물질과 기판의 평면을 적절히 선택함으로서 자기 저항을 조절할 수 있는 새로운 방법을 찾을 수 있다고 판단된다.

• Journal of Magnetics
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• 제5권4호
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• pp.135-138
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• 2000

In order to study the effect of the magnetic anisotropy on the giant magnetoresistance in a Co/Cu multilayered system, the angle dependent magnetoresistance (MR) was measured. The experimental results showed that the maximum MR ratio depends on the angle between the direction of the applied field and the easy axis. The angular modulation of the MR ratio can be explained by the alignments of the two 'effective' magnetization vectors that are bound to their own easy axes. Two maxima observed in MR loops at the second antiferromagnetic maximum are discussed in relation to the magnetic anisotropy, The simulated results under the assumption of the existence of two in-plane easy axes in the sample are compared with the experiments.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1050-1053
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• 2001

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/HiO(300$\AA$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in 45$^{\circ}$Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) was shown in the range of about $\pm$50 Oe.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.307-314
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• 2000

In order to study the effect of the magnetic anisotropy on the giant magnetoresistance (GMR), the angle dependent magnetoresistance (MR) was measured. The experimental results show that the maximum MR ratio depends on the angle between the direction of the applied field and that of the easy axis. The angular modulation of the MR ratio can be explained by the alignments of the two 'effective' magnetization vectors that are bound to their own easy axes. The typical property of MR loops at 2$\^$nd/ antiferromangtic maximum (AFM) such as two maxima was discussed in relation with the magnetic anisotropy (MA). The simulated results under an assumption of the two in-plane easy axes, which exist in the sample, were compared with the experiments.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1999년도 추계연구발표회 논문개요집
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• pp.14-15
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• 1999

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.260-263
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• 2002

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in $45^{\circ}$ Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ was shown in the range of about ${\leq}{\pm}5$ Oe.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.355-358
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• 2000

Magnetoresistance changes of NiFe thin films were investigated as a function of deposition temperature. DC magnetron sputtering was employed to fabricate Ta/NiFe(t)/Ta thin films on Si(001) substrates with in-situ field or with no-field. The thickness(t) of NiFe films was a range of 4 to 15nm. Substrate temperature was a range of 30 to 400$^{\circ}C$. MR measurement was carried out as a function of angle $\theta$, between external field and current direction. MR ratio increased with increasing substrate temperature, also, max. MR ratio was observed in samples deposited at 300$^{\circ}C$. With increasing upto 400$^{\circ}C$, MR ratio was rapidly decreased in the case of thinner NiFe films. In non-field deposited NiFe films, both angle $\theta$=0, 90。, there was no significant change in MR curves. However, MR curves of in-situ field deposited NiFe films were different in both angles $\theta$=0 and 90。