• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.1050-1053
• /
• 2001

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/HiO(300$\AA$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in 45$^{\circ}$Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) was shown in the range of about $\pm$50 Oe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.260-263
• /
• 2002

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in $45^{\circ}$ Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ was shown in the range of about ${\leq}{\pm}5$ Oe.