한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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- Pages.175-177
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- 2002
Si-O 초격자 다이오드의 전기적 특성
Electrical Characteristics of Si-O Superlattice Diode
- 박성우 (대불대학교 나노정보소재연구소) ;
- 서용진 (대불대학교 나노정보소재연구소) ;
- 정소영 (대불대학교 나노정보소재연구소) ;
- 박창준 (대불대학교 나노정보소재연구소) ;
- 김기욱 (대불대학교 나노정보소재연구소) ;
- 김상용 (아남반도체 주식회사)
- Park, Sung-Woo (Nano-Information Materials & Devices Lab. DAEBUL University) ;
- Seo, Yong-Jin (Nano-Information Materials & Devices Lab. DAEBUL University) ;
- Jeong, So-Young (Nano-Information Materials & Devices Lab. DAEBUL University) ;
- Park, Chang-Jun (Nano-Information Materials & Devices Lab. DAEBUL University) ;
- Kim, Ki-Wook (Nano-Information Materials & Devices Lab. DAEBUL University) ;
- Kim, Sang-Yong (ANAM Semiconductor, Co.)
- 발행 : 2002.11.07
초록
Electrical characteristics of the Si-O superlattice diode as a function of annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy (MBE) system. Consequently, the experimental results of superlattice diode with multilayer Si-O structure showed the stable and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic and quantum device as well as for the replacement of silicon-on-insulator (SOI) in ultra high speed and lower power CMOS devices in the future, and it can be readily integrated with silicon ULSI processing.
키워드