한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Si-O 초격자 다이오드의 전기적 특성

Electrical Characteristics of Si-O Superlattice Diode

  • 박성우 (대불대학교 나노정보소재연구소) ;
  • 서용진 (대불대학교 나노정보소재연구소) ;
  • 정소영 (대불대학교 나노정보소재연구소) ;
  • 박창준 (대불대학교 나노정보소재연구소) ;
  • 김기욱 (대불대학교 나노정보소재연구소) ;
  • 김상용 (아남반도체 주식회사)
  • Park, Sung-Woo (Nano-Information Materials & Devices Lab. DAEBUL University) ;
  • Seo, Yong-Jin (Nano-Information Materials & Devices Lab. DAEBUL University) ;
  • Jeong, So-Young (Nano-Information Materials & Devices Lab. DAEBUL University) ;
  • Park, Chang-Jun (Nano-Information Materials & Devices Lab. DAEBUL University) ;
  • Kim, Ki-Wook (Nano-Information Materials & Devices Lab. DAEBUL University) ;
  • Kim, Sang-Yong (ANAM Semiconductor, Co.)
  • 발행 : 2002.11.07
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초록

Electrical characteristics of the Si-O superlattice diode as a function of annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy (MBE) system. Consequently, the experimental results of superlattice diode with multilayer Si-O structure showed the stable and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic and quantum device as well as for the replacement of silicon-on-insulator (SOI) in ultra high speed and lower power CMOS devices in the future, and it can be readily integrated with silicon ULSI processing.

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