한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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- Pages.178-181
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- 2002
패드 특성이 W CMP 공정에 미치는 영향
Effects of W CMP Process on PAD Characterization
- Kim, Sang-Yong (ANAM Semiconducter) ;
- Seo, Yong-Jin (Deabul University) ;
- Chung, Hun-Sang (Chosun University) ;
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Kim, Chang-Il
(Chungang University)
;
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Chang, Eui-Goo
(Chungang University)
- 발행 : 2002.11.07
초록
We studied the characteristics of polishing pad, which can apply W CMP process for global planarization of multilevel interconnection structure. Also we investigated the effects of different sets of polishing pad. The purpose of this experiment is the cost reduction by the increase of pad life time and decrease of cycle time and slurry usage with new pad. Especially we studied the effect of polishing pad for CMP process by this experiment of polishing pad that is consumables material during CMP process. We expecting the increase of process throughput and improvement of device manufacturing yield because we can choose optimum polishing pad through this result.