A Study on the Carrier Trapping Model and Trap Characteristics for Nitridation of Oxide

캐리어 트랩핑 모델 및 질화산화막의 트랩특성에 관한 연구

In this paper, we discuss carrier trapping model and trap characteristics of nitrided oxide thin film. Based on the experimental results, the carrier trapping model for system having multi-traps is proposed and is fitted with experimental data in order to determine trap parameter of nitride oxide and O2 annealed nitrided oxide. As a results of curve fitting, the heavy nitridation of oxide introduces three kinds of traps with capture cross section $\sigma$n1=1.48$\times$10$^{-17}$ $\textrm{cm}^2$, $\sigma$n2=1.51$\times$10$^{-19}$ $\textrm{cm}^2$, $\sigma$p=1.53$\times$10$^{-18}$ $\textrm{cm}^2$ and corresponding trap densities Nnl=2.66$\times$10$^{12}$ Cm$^{-2}$ , Nn2=1.32$\times$10$^{12}$ Cm$^{-2}$ , Np=8.35$\times$10$^{12}$ Cm$^{-2}$ .