대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 1999년도 하계종합학술대회 논문집
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- Pages.393-396
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- 1999
CMOS RE-IC 설계를 위한 실리콘 기판 커플링 모델 및 해석
Modeling and Analysis of Silicon Substrate Coupling for CMOS RE-IC Design
초록
A circuit model of silicon substrate coupling for CMOS RF-IC design is developed. Its characteristics are analyzed by using a simple RC mesh model in order to investigate substrate coupling. The coupling effects due to the substrate were characterized with substrate resistivity, oxide thickness, substrate thickness. and physical distance. Thereby the silicon substrate effects are analytically investigated and verified with simulation. The analysis and simulation of the model have excellent agreements with MEDICI(2D device simulator) simulation results.
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