• 한국재료학회지
• /
• 제24권9호
• /
• pp.458-464
• /
• 2014

Light scattering enhancement is widely used to enhance the optical absorption efficiency of dye-sensitized solar cells. In this work, we systematically analyzed the effects of spherical voids distributed as light-scattering centers in photoanode films made of an assembly of zinc oxide nanoparticles. Spherical voids in electrode films were formed using a sacrificial template of polystyrene (PS) spheres. The diameter and volume concentration of these spheres was varied to optimize the efficiency of dye-sensitized solar cells. The effects of film thickness on this efficiency was also examined. Electrochemical impedance spectroscopy was performed to study electron transport in the electrodes. The highest power conversion efficiency of 4.07 % was observed with $12{\mu}m$ film thickness. This relatively low optimum thickness of the electrode film is due to the enhanced light absorption caused by the light scattering centers of voids distributed in the film.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
• /
• pp.121.2-121.2
• /
• 2011

Aluminum-doped Zinc Oxide (AZO) is considered as an excellent candidate to replace Indium Tin Oxide (ITO), which is widely used as transparent conductive oxide (TCO) for electronic devices such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and organic solar cells (OSCs). In the present study, AZO thin film was applied to the transparent electrode of a channel-shaped flexible organic solar cell using a low-temperature selective-area atomic layer deposition (ALD) process. AZO thin films were deposited on Poly-Ethylene-Naphthalate (PEN) substrates with Di-Ethyl-Zinc (DEZ) and Tri-Methyl-Aluminum (TMA) as precursors and $H_2O$ as an oxidant for the atomic layer deposition at the deposition temperature of $130^{\circ}C$. The pulse time of TMA, DEZ and $H_2O$, and purge time were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on a PEN substrate exhibited sheet resistance of $87{\Omega}$/square and optical transmittance of 84.3% at a wavelength between 400 and 800 nm.

• Journal of Welding and Joining
• /
• 제24권4호
• /
• pp.27-31
• /
• 2006

Optimization of process parameters for laser-arc hybrid welding process is intrinsically sophisticated because the process has three kinds of parameters-arc, laser and hybrid welding parameters. In this paper, the relationship between weldability and several process parameters such as laser beam-arc distance, electrode height, welding current and welding speed, were investigated by the full factorial experimental design. Weld quality was evaluated by using weight of spatters which is related with the pore area. It was found that the weld quality was increased with the increases in laser beam-arc distance and welding current, and decreased with the increases in electrode height and welding speed.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.397-397
• /
• 2007

Multilayer transparent electrodes, having a much lower electrical resistance than the widely used transparent conducting oxide electrodes, were prepared by using radio frequency magnetron sputtering. The multilayer structure consisted of five layers, indium tin oxided(ITO)/zinc oxide(ZnO)/Ag/oxide(ZnO)/ITO. With about 50nm thick ITO films, the multilayer showed a high optical transmittance in the visible range of the spectrum and had color neutrality. The electrical and optical properties of ITO/ZnO/Ag/ZnO/ITO multilayer were changed mainly by Ag film properties, which were affected by the deposition process of the upper layer. Especially ZnO layer was improved to adhesion of Ag and ITO. A high quality transparent electrode, having a resistance as low as and a high optical transmittance of 91% at 550nm, was obtained. It could satisfy the requirement for the flexible OLED and LCD.

• Nuclear Engineering and Technology
• /
• 제55권5호
• /
• pp.1718-1733
• /
• 2023

The virtual Frisch-grid method for room-temperature radiation detectors has been widely used because of its simplicity and high performance. Recently, side electrodes were separately attached to each surface of the detectors instead of covering the entire detector surface with a single electrode. The side-electrode structure enables the measurement of the three-dimensional (3D) gamma-ray interaction in the detector. The positional information of the interaction can then be utilized to precisely calibrate the response of the detector for gamma-ray spectroscopy and imaging. In this study, we developed a 3D position-sensitive 5 × 5 × 12 mm³ cadmium-zinc-telluride (CZT) detector and applied a flattening method to correct detector responses. Collimated gamma-rays incident on the surface of the detector were scanned to evaluate the positional accuracy of the detection system. Positional distributions of the radiation interactions with the detector were imaged for quantitative and qualitative evaluation. The energy spectra of various radioisotopes were measured and improved by the detector response calibration according to the calculated positional information. The energy spectra ranged from 59.5 keV (emitted by ²⁴¹Am) to 1332 keV (emitted by ⁶⁰Co). The best energy resolution was 1.06% at 662 keV when the CZT detector was voxelized to 20 × 20 × 10.

• 전기화학회지
• /
• 제3권4호
• /
• pp.204-210
• /
• 2000

용융아연 도금 강판 제조시 용융아연 도금 bath중의 알루미늄 농도를 조절하는 것은 매우 중요하다 본 연구의 목적은 용융아연 도금욕 중 알루미늄 농도를 신속하게 측정할 수 있는 센서 개발을 위한 기초 data를 제공하는 것이다. $CaF_2$고체전해질과 3가지 종류의 참조극을 사용하여 $460^{\circ}C\~500^{\circ}C$의 순수한 용융아연 bath에서 불소포텐샬을 측정하였다. 용융 아연 중 알루미늄의 농도를 측정하기 위하여 다음과 같은 불소 이온 농담전지 센서를 구성하였다. $$(-)W|Zn-Al,\;AlF_3|CaF_2|Bi,BiF_3|W(+)$$ 알루미늄의 농도가 $0.984wt\%$이하인 Zn-Al bath의 온도를 $460\pm10^{\circ}C$로 유지하고 상기의 알루미늄 농도 센서를 이용하여 기전력을 측정하였다. 측정된 기전력 값으로부터 최소 자승 회귀분석법을 이용하여, 다음과 같은 알루미늄 농도와 기전력과의 관계식을 얻었다. $$E/mV=56.795log[\%Al]+1881.7\;R=0.9704$$,$$0.026wt\%{\leq}[\%Al]{\leq}0.984wt\%$$

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.91-92
• /
• 2006

Aluminum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). AZO films have been deposited on glass (corning 1737) substrates by RF magnetron sputtering system. The electrical resistivity of AZO films was $1.81{\times}10^{-2}{\Omega}cm$ and the average transmittance in the visible range 400-800 nm was more than 76% Organic light-emitting diodes (OLEDs) with AZO/TPD/$Alq_3$/Al configuration were fabricated. The current density-voltage properties of devices were studied and compared with ITO devices fabricated under the same conditions.

• Journal of Electrochemical Science and Technology
• /
• 제3권4호
• /
• pp.178-184
• /
• 2012

A porous nickel (P-Ni) substrate was prepared by selective leaching of zinc from pressed pellets containing powders of Ni & Zn in 4 M NaOH solution. Anodic deposition of manganese oxide onto the porous Ni substrate ($MnO_x$/P-Ni) formed nano-flakes of manganese oxide layers as revealed in SEM studies. Pseudocapacitance of this oxide electrode was evaluated by cyclic voltammetry (CV) and chronopotentiometry (CHP) in 2 M NaOH solution. The specific capacitance of the Mn oxide electrode was as high as 1515 F $g^{-1}$, which was ten times higher than Mn oxide deposited on a flat Ni-ribbon. 80% of capacity was retained after 200 charge/discharge cycles. The system showed no loss of activity in dry form over period of days. The impedance studies indicated highly conducting $MnO_x$/P-Ni substance and the obtained specific capacitance from impedance data showed good agreement with the charge/discharge measurements.

• 반도체디스플레이기술학회지
• /
• 제13권2호
• /
• pp.1-5
• /
• 2014

Transparent and conducting aluminum-doped ZnO electrodes were fabricated by atomic layer deposition methods. The electrode showed the lowest resistivity of $5.73{\times}10^{-4}{\Omega}cm$ at a 2.5% cyclic layer deposition ratio of Trimethyl-aluminum and Diethyl-zinc chemicals. The electrodes showed minimum resistivity when deposited at a temperature of $225^{\circ}C$. The electrode also showed optical transmittance of about 92% at 300 nm. An organic solar cell made with a 300-nm-thick aluminum-doped ZnO electrode exhibited 2.0% power conversion efficiency.

• 한국재료학회지
• /
• 제30권9호
• /
• pp.458-464
• /
• 2020

Zinc-ion hybrid supercapacitors (ZICs) have recently been spotlighted as energy storage devices due to their high energy and high power densities. However, despite these merits, ZICs face many challenges related to their cathode materials, activated carbon (AC). AC as a cathode material has restrictive electrical conductivity, which leads to low capacity and lifetime at high current densities. To overcome this demerit, a novel boron (B) doped AC is suggested herein with improved electrical conductivity thanks to B-doping effect. Especially, in order to optimize B-doped AC, amounts of precursors are regulated. The optimized B-doped AC electrode shows a good charge-transfer process and superior electrochemical performance, including high specific capacity of 157.4 mAh g^-1 at current density of 0.5 A g^-1, high-rate performance with 66.6 mAh g^-1 at a current density of 10 A g^-1, and remarkable, ultrafast cycling stability (90.7 % after 10,000 cycles at a current density of 5 A g^-1). The superior energy storage performance is attributed to the B-doping effect, which leads to an excellent charge-transfer process of the AC cathode. Thus, our strategy can provide a rational design for ultrafast cycling stability of next-generation supercapacitors in the near future.