• Title/Summary/Keyword: yellow phosphor

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Effect of Yellow Phosphor on Characteristics of White Light Emitting Diode (백색 발광다이오드의 특성에 대한 황색 형광체의 영향)

  • Chang, Ho-Jung;Son, Chang-Sik;Hur, Jae-Sung
    • Journal of the Korean institute of surface engineering
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    • v.40 no.2
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    • pp.103-106
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    • 2007
  • We have investigated the optical and electrical properties of surface mounted white light emitting diode (LED) chips prepared by using yellow phosphors on the blue LED chip. The yellow phosphor mixed with transparent epoxy was coated on the prepared LED chip. The optimum mixing conditions with epoxy and yellow phosphor is obtained at the mixing ratio of epoxy:yellow phosphor = 97:3 wt%. The maximum luminance and light emitting efficiency are above $80,000cd/m^2$ and 23.2 lm/W, respectively, at the bias voltage of 2.9 V. There was no distinct change in the luminance strength with changing of the yellow phosphor ratios. The current of the white LED chip is about 30 mA at 2.9 V.

Luminescence Characteristics of Mg2+·Ba2+ Co-Doped Sr2SiO4:Eu Yellow Phosphor for Light Emitting Diodes (LED용Mg2+·Ba2+Co-Doped Sr2SiO4:Eu 노란색 형광체의 발광특성)

  • Choi, Kyoung-Jae;Jee, Soon-Duk;Kim, Chang-Hae;Lee, Sang-Hyuk;Kim, Ho-Kun
    • Journal of the Korean Ceramic Society
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    • v.44 no.3 s.298
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    • pp.147-151
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    • 2007
  • An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

Structural and Optical Properties of Yellow-Emitting CaGd2ZrSc(AlO4)3:Ce3+ Phosphor for Solid-State Lighting

  • Kim, Yoon Hwa;Kim, Bo Young;Viswanath, Noolu S.M.;Arunkumar, Paulraj;Im, Won Bin
    • Journal of the Korean Ceramic Society
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    • v.54 no.5
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    • pp.422-428
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    • 2017
  • Single-phase yellow phosphor, $CaGd_{2-x}ZrSc(AlO_4)_3:xCe^{3+}$ ($CGZSA:Ce^{3+}$), possessing cubic symmetry with varied $Ce^{3+}$ concentrations, was synthesized using the solid-state reaction method. The samples were characterized using X-ray diffraction (XRD), excitation spectra, emission spectra, thermal quenching, and decay curves. The cubic phase of $CGZSA:Ce^{3+}$ phosphor was confirmed via XRD analysis. The photoluminescence spectra of $CGZSA:Ce^{3+}$ phosphor demonstrated that the phosphor could be excited at the wavelength of 440 nm; a broad yellow emission band was centered at 541 nm. These results indicate that the phosphors are adequately excited by blue light and have the potential to function as yellow-emitting phosphors for applications in white light-emitting diodes.

Luminescence Characteristics of Ba2+ Co-Doped Sr2SiO4:Eu Yellow Phosphor for Light Emitting Diodes (LED용 Ba2+ Co-Doped Sr2SiO4:Eu 황색 형광체의 발광특성)

  • Choi, Kyoung-Jae;Park, Joung-Kyu;Kim, Kyung-Nam;Kim, Chang-Hae;Kim, Ho-Kun
    • Journal of the Korean Ceramic Society
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    • v.43 no.3 s.286
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    • pp.169-172
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    • 2006
  • We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.

Bi-layers Red-emitting Sr2Si5N8:Eu2+ Phosphor and Yellow-emitting YAG:Ce Phosphor: A New Approach for Improving the Color Rendering Index of the Remote Phosphor Packaging WLEDs

  • Nhan, Nguyen Huu Khanh;Minh, Tran Hoang Quang;Nguyen, Tan N.;Voznak, Miroslav
    • Current Optics and Photonics
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    • v.1 no.6
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    • pp.613-617
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    • 2017
  • Due to optimal advances such as chromatic performance, durability, low power consumption, high efficiency, long-lifetime, and excellent environmental friendliness, white LEDs (WLEDs) are widely used in vehicle front lighting, backlighting, decorative lighting, street lighting, and even general lighting. In this paper, the remote packaging WLEDs (RP-WLEDs) with bi-layer red-emitting $Sr_2Si_5N_8:Eu^{2+}$ and yellow-emitting YAG:Ce phosphor was proposed and investigated. The simulation results based on the MATLAB software and the commercial software Light Tools indicated that the color rendering index (CRI) of bi-layer phosphor RP-WLEDs had a significant increase. The CRI had a considerable increase from 72 to 94. In conclusion, the results showed that bi-layer red-emitting $Sr_2Si_5N_8:Eu^{2+}$ and yellow-emitting YAG:Ce phosphor could be a prospective approach for manufacturing RP-WLEDs with enhanced optical properties.

Synthesis and characterization of orange-yellow phosphor for inorganic EL device

  • Chang, Mi-Youn;Lee, You-Hui;Han, Sang-Do;Khatkar, S.P.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1334-1337
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    • 2005
  • Orange-yellow phosphor has been synthesized by solid-state method for inorganic EL devices. Zinc sulfide is used as host material for the phosphor and the phosphor consists of copper and manganese as activators. The dependence of the photoluminescence (PL) and electroluminescence(EL) properties on the copper and manganese concentrations has been investigated.

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Luminescence Characteristics of Blue and Yellow Phosphor for Near-Ultraviolet (자외선 여기용 청색 및 황색 형광체의 발광특성)

  • Choi, Kyoung-Jae;Park, Joung-Kyu;Kim, Kyung-Nam;Kim, Chang-Hae;Kim, Ho-Kun
    • Journal of the Korean Ceramic Society
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    • v.43 no.5 s.288
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    • pp.304-308
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    • 2006
  • We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

Synthesis of Phosphor for Light-Emitting Diodes by Sol-Gel Method (졸-겔법을 이용한 LED용 형광체의 합성)

  • Ahn Joong-In;Han Cheong-Hwa;Park Jung-Kyu;Kim Chang-Hae
    • Korean Journal of Materials Research
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    • v.14 no.10
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    • pp.749-753
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    • 2004
  • In this study, we attempt to synthesize the $Sr_{3}SiO_{5}:Eu$ yellow phosphor by sol-gel technique. Based on the blue emitting diodes as primary light source, white light emitting diodes have been manufactured using the $Sr_{3}SiO_{5}:Eu$ yellow phosphor as the luminescent material. Luminescent efficiency of yellow phosphor as well as that of blue LED is very important factor to enhance the luminescent efficiency of white LED. In order to improve the luminescent efficiency, we have synthesized the $Sr_{3}SiO_{5}:Eu$ phosphor by sol-gel technique. To research optimum condition of gelation reaction, the ratio of $H_{2}O$ to TEOS was fixed as 60:1. When the drying temperature was at $100^{\circ}C$, emission intensity was better than at $70^{\circ}C$. The critical $Eu^{2+}$ concentration was estimated to be about 0.05 mol and sintering temperature at $1300^{\circ}C$ was indicated best emission intensity.

Development of yellow and blue phosphor and their emission properties

  • Park Soo-Gil;Cho Seong-Ryoul;Son Won-Ken;Lim Kee-Joe;Lee Ju-Seong
    • Journal of the Korean Electrochemical Society
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    • v.1 no.1
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    • pp.24-27
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    • 1998
  • Electroluminescence (EL) comes from the light emission obtained by the electrical excitation energy passing through a phosphor layer undo. an applied high electrical field $(10^6 V/cm)$. The preparation of white and blue phosphors and characterizations of light emitting alternating current powder electroluminescent devices (ACPELDs) were investigated. In this work, we fabricated two kinds of ELDs, that is, yellow electroluminescent device (B-ELD), blue electroluminescent device (B-ELD). The basic st.uctures of Y-ELD and B-ELD are ITO (Indium Tin Oxide)/phosphor layer/Insulator layer/Carbon electrode and ITO/Phosphor layer/Insulating layer/carbon electrode, respectively. Another structures of ITO/Phosphor and Insulator mixture layer/Backelectrode are introduced. EL spectra and luminance of two types of ELDs were measured by changing voltage at fixed frequency 0.4kHz, 1.5kHz. Blue and yellow phosphors prepared in this work show $50cd/m^2\;and\;30cd/m^2$ of luminance at 400Hz, 150V.

Application of $Sr_3SiO_5$:Eu yellow phosphor for white light-emitting diodes

  • Park, Joung-Kyu;Kim, Chang-Hae;Park, Hee-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.676-678
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    • 2004
  • In order to develop new yellow phosphor that emit efficiently under the 450 - 470 nm excitation range, we have synthesized a $Eu^{2+}$-activated $Sr_3SiO_5$ yellow phosphor and investigated an attempt to develop white LEDs by combining it with a InGaN blue LED chip (460 nm). Two distinct emission bands from the InGaN-based LED and the $Sr_3SiO_5$:Eu phosphor are clearly observed at 460 nm and at 570 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that InGaN (460 nm chip)-based $Sr_3SiO_5$:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

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