• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2005.11a
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• pp.149-152
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• 2005

데이터방송 표준 관련해서 지난 2005년 8월에 미국 지상파 데이터방송 표준인 ATSC ACAP이 정식으로 통과되면서 우리나라의 지상파 데이터방송 표준도 2005년 9월에 ACAP 표준을 따르도록 새롭게 제정되었다. 따라서, 정통부와 방송사 그리고 관련 가전사들간에 지상파 데이터방송 본방송 일정에 관한 협의가 본격적으로 이뤄지는 계기가 마련되었다. 그러나, 지상파 데이터방송은 근본적으로 지상파 DTV 채널의 대역폭이 제한되어 있어서 다양한 데이터방송용 애플리케이션을 빠르게 전송하는 것이 사실상 불가능한 실정이다. 이에 본 논문은 오브젝트 캐로설 구성 시 ACAP 표준의 ACAP-X 프로파일에서 규정된 BIOPProfileBody 뿐만 아니라 HTTPProfileBody도 ACAP-J 프로파일에서 추가로 지원하도록 하여 실제 애플리케이션을 구성하고 있는 일부 혹은 전체 파일 오브젝트를 지상파 온에어 채널로 전송하는 대신 리턴채널을 이용하여 빠르게 전송하는 방법을 연구 ${\cdot}$ 개발하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.6C
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• pp.343-348
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• 2011

This paper introduces a design for real time wireless headset using ANC (active noise control) system based on NFxLMS adaptive filter algorithm. The training time of the proposed system is significantly reduced by using the RMS delay spread of a channel as an error correction parameter, and convergence rate of the FxLMS filter has been improved with updating the coefficients of the NFxLMS filter, which we have got during the training process. Our system has shorter training time and better convergence rate at the same noise reduction level than the conventional system under real noisy environment.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.534-540
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• 1990

In this paper the characteristics of submicron gate GaAs MESFET's have been studied using a particle model which takes into account the hot-electron transport phenomena, i.e., the velocity overshoot. \ulcornervalley(<000> direction), L valley (<111>direction), X valley (<100>direction) as the GaAs conduction energy band and optical phonon, acoustic phonon, equivalent intervalley, nonequivalent intervalley scattering as the scattering models, have been considered in this simulation. And the GaAs material and the device simulation have been done by determination of the free flight time, scattering mechanism and scattering angle according to Monte-Carlo algorithm which makes use of a particle model. As a result of the particle simulation, firstly the electron distribution, the potential energy distribution and the situation of electron displacement in 0.6 \ulcorner gate length device have been obtained. Secondly, the cutoff frequency, obtained by this method, is k47GHz which is in good agreement with the calculated result of theory. And the current-voltage characteristics curve which takes account of the buffer layer effect has been obtained. Lastly it has been verified that parasitic current at the buffer layer can be analyzed using channel depth modulation.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1409-1418
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• 1990

Characteristics of NMOS transistors with phosphorus source/drain junctions formed by two-step rapid thermal diffusion (RTD) process using a solid diffusion source have been investigated. Phosphorus profiles after RTD were measured by SIMS analysis. In the case of 1100\ulcorner, 10sec RTD of, P, the specific contact resistance of n+ Si-Al was 2.4x10**-7 \ulcorner-cm\ulcorner which is 1/5 of the As junction The comparison fo P junction devices formed by RTD and conventional As junction devices shows that both short channel effect and hot carrier effect of P junction devices are smaller than those of As junction devices when the devices have same junction depths. P junction device had maximum of 0.4 times lower Isub/Id than As junction device. Characteristics of P junction formed by several different RTD conditions have been compared and 1000\ulcorner RTD sample had the smaller hot carrier generation. Also, it has been shown that the hot carrier generation can be futher reduced by forming the P junctions by 3-step RTD which has RTO-driven-in process additionally.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.265-265
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• 2013

We have investigated the influences of dangling bonds generated by alpha particle irradiation on friction and adhesion properties of graphene. Single layer of graphene grown with chemical vapor deposition on copper foil was irradiated by the alpha beam with the average energy of 3.04 MeV and the irradiation dosing between $1{\times}10^{14}$ and $1{\times}10^{15}$/$cm^3$. Raman spectroscopic showed that the ${\pi}$ electron states below Fermi level arises and the $I_D$/$I_G$ increases as increasing the dosing of alpha particle irradiation. The core level X-ray photoelectron (XPS) revealed that these defects represent the creation of various carbon-related defects and dangling bond. The nanoscale tribological properties were investigated with atomic force microscopy in ultrahigh vacuum. The friction appeared to increase remarkably as increasing the amount of dosing, indicating that the dangling bonds on graphene layers enhances the energy dissipations in friction. This trend can be explained by the additional channel of energy dissipation by dangling bond or O- and H- terminated clusters created by alpha particle irradiation.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.331-340
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• 1994

Polysilicon on insulator has been recrystallized by zone melting recrystallization method with graphite strip heaters. Experiments are performed with non-seed SOI structures. When the capping layer thickness of Si$\_$3/N$\_$4//SiO$\_$2/ is 2.0.mu.m, grain boundaries are about 120.mu.m spacing and protrusions reduced. After the seed SOI films are annealed at 1100.deg. C in NH$\_$3/ ambient for 3 hours, the recrystallized silicon surface has convex shape. After ZMR process, the tensile stress is 2.49*10$\^$9/dyn/cm$\^$2/ and 3.74*10$\^$9/dyn/cm$\^$2/ in the seed edge and seed center regions. The phenomenon of convex shape and tensile stress difference are completely eliminated by using the PSG/SiO$\_$2/ capping layer. The characterization of SOI films are showed that the SOI films are improved in wetting properties. N channel SOI MOSFET has been fabricated to investigate the electrical characteristics of the recrystallized SOI films. In the 0.7.mu.m thickness SOI MOSFET, kink effects due to the floating substrate occur and the electron mobility was calculated from the measured g$\_$m/ characteristics, which is about 589cm$\^$2//V.s. The recrystallized SOI films are shown to be a good single crystal silicon.

• Wind and Structures
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• v.1 no.4
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• pp.337-349
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• 1998

A numerical and experimental study was performed for the wind flow field in one area, comprising a group of several pavilions separated by passageways, of the EXPO '98 - a World Exposition (Lisbon, Portugal). The focus of this study is the characterization of the flow field to assess pedestrian comfort. The predictions were obtained employing the Reynolds averaged Navier-Stokes equations with the turbulence effects dealt with the ${\kappa}-{\varepsilon}$ RNG model. The discretization of the differential equations was accomplished with the control volume formulation in a Cartesian coordinate system, and an advanced segregated procedure was used to achieve the link between continuity and momentum equations. The evaluation of the overall numerical model was performed by comparing its predictions against experimental data for a square cylinder placed in a channel. The predicted values, for the practical geometry studied, are in a good agreement with the experimental data, showing the performance and the reliability of the ${\kappa}-{\varepsilon}$ RNG model and suggesting that the numerical simulation is a reliable methodology to provide the required information.

• Journal of Communications and Networks
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• v.6 no.2
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• pp.93-105
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• 2004

This paper discusses cyclostationary interference suppression for multiuser wired communication systems. Crosstalk interference from digital signals in multipair cables has been shown to be cyclostationary. Many crosstalk equalization or suppression techniques have been proposed which make implicit use of the cyclostationarity of the crosstalk interferer. In this paper, the convergence and steady-state behaviors of a fractionally spaced equalizer (FSE) in the presence of multiple cyclostationary crosstalk interference are thoroughly analyzed by using the equalizer's eigenstructure. The eigenvalues with multiple cyclostationary interference depend upon the folded signal and interferer power spectra, the cross power spectrum between the signal and the interferer, and tile cross power spectrum between the interferers, which results in significantly different initial convergence and steady-state behaviors as compared to the stationary noise case. The performance of the equalizer varies depending on the relative clock phase of the symbol clocks used by the signal and multiple interferers. Measued characteristics as well as analytical model of NEXT/FEXT channel are used to compute the optimum and worst relative clock phases among the signal and multiple interferers.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.11B
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• pp.1595-1599
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• 2001

In this paper, we have desired and implemented of ASK modulator MMIC operating at 5.8 GHz for OBE used in AGPS(Automatic Gate Passing System). The proposed ASK modulator MMIC was implemented to apply a single supply voltage of 3 V to the drain in order to decrease ACP(Adjacent Channel Power). As a result, it is exhibits a broad linear modulation range from 0.7 V to 3 V and an On/off characteristic over 40 dB. The layouts of ASK modulator MMICs was designed and fabricated by using ETRI 0.57m MESFET library The chip size was 1.0mm $\times$x1.0mm.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1884-1886
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• 2005

KrF 펄스 레이저 증착법(pulsed laser deposition: PLD)으로 ZnO 박막을 증착하여 평판 디스플레이 소자 구동용 박막 트랜지스터(thin film transistor) 소자를 제작하였다. 전도성이 높은 실리콘웨이퍼(c-Si, 하부전극) 기판 위에 LPCVD 법으로 silicon nitride 박막을 절연막으로 형성하고, 다양한 공정 조건에서 펄스 레이저 증착법으로 제작한 ZnO 박막을 증착하여 채널층으로 하였으며, Al 박막을 증착하고 패터닝하여 소스 및 드레인 전극으로 하였다. ZnO 박막의 증착 시에 기판 온도를 다양하게 조절하고 산소 분압을 변화시켜 ZnO 박막의 특성을 조절하였다. 제작된 박막의 표면특성은 AFM(atomic force microscopy)로 분석하고, 결정특성은 XRD(X-ray diffraction)로 조사하였다. ZnO 박막의 전기적 특성은 Hall-van der Pauw 법으로 측정하였고, 광학 투과도(optical transparency)를 UV-visible photometer로 조사하였다. ZnO-TFT 소자는 $10^6$ 수준의 on-off ratio와 $2.4{\sim}6.1cm^2/V{\cdot}s$의 전계효과이동도(field effect mobility)를 보였다.