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Characteristics of HfO2-Al2O3 Gate insulator films for thin Film Transistors by Pulsed Laser Deposition

  • Hwang, Jae Won;Song, Sang Woo;Jo, Mansik;Han, Kwang-hee;Kim, Dong woo;Moon, Byung Moo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.304.2-304.2
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    • 2016
  • Hafnium oxide-aluminum oxide (HfO2-Al2O3) dielectric films have been fabricated by Pulsed Laser Deposition (PLD), and their properties are studied in comparison with HfO2 films. As a gate dielectric of the TFT, in spite of its high dielectric constant, HfO2 has a small energy band gap and microcrystalline structure with rough surface characteristics. When fabricated by the device, it has the drawback of generating a high leakage current. In this study, the HfAlO films was obtained by Pulsed Laser Deposition with HfO2-Al2O3 target(chemical composition of (HfO2)86wt%(Al2O3)14wt%). The characteristics of the thin Film have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The X-ray diffraction studies confirmed that the HfAlO has amorphous structure. The RMS value can be compared to the surface roughness via AFM analysis, it showed HfAlO thin Film has more lower properties than HfO2. The energy band gap (Eg) deduced by spectroscopic ellipsometer was increased. HfAlO films was expected to improved the interface quality between channel and gate insulator. Apply to an oxide thin Film Transistors, HfAlO may help improve the properties of device.

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Noise Contribution Analysis of Pantograph Using Real Train Experiment (실차시험을 이용한 팬터그래프의 소음기여도 분석)

  • Oh, Hyuck Keun;Noh, Hee-Min;Kim, Jun-Kon;Park, Choonsoo
    • Journal of the Korean Society for Railway
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    • v.19 no.3
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    • pp.271-279
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    • 2016
  • Pantograph aerodynamic noise is a major cause of noise that occurs when a train is traveling at high speeds. In this study, in order to analyze the contribution of pantograph aerodynamic noise, real train tests using HEMU-430X were carried out. In order to analyze the frequency characteristic of the noise of the pantograph in an actual vehicle, a sound field visualization has been carried out using a 144-channel microphone array at train speeds of 350 and 400km/h. As a result, it was confirmed that the low frequency noise in the 250~400Hz bandwidth provides the main contribution to the pantograph noise. And, in order to estimate the noise contribution of the pantograph, the noise level difference between cases in which the pantograph is ascending and those in which it is descending were compared in single microphone experiments. The frequency analysis in the single microphone tests showed that the bands of 315~400Hz and 1000~1250Hz are the main frequency characteristics of pantograph noise. These results show quite good agreement with those of previous studies and with results of sound field visualization.

Preliminary Analysis of Data Quality and Cloud Statistics from Ka-Band Cloud Radar (Ka-밴드 구름레이더 자료품질 및 구름통계 기초연구)

  • Ye, Bo-Young;Lee, GyuWon;Kwon, Soohyun;Lee, Ho-Woo;Ha, Jong-Chul;Kim, Yeon-Hee
    • Atmosphere
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    • v.25 no.1
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    • pp.19-30
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    • 2015
  • The Ka-band cloud radar (KCR) has been operated by the National Institute of Meteorological Research (NIMR) of Korea Meteorological Administration (KMA) at Boseong National Center for Intensive Observation of severe weather since 2013. Evaluation of data quality is an essential process to further analyze cloud information. In this study, we estimate the measurement error and the sampling uncertainty to evaluate data quality. By using vertically pointing data, the statistical uncertainty is obtained by calculating the standard deviation of each radar parameter. The statistical uncertainties decrease as functions of sampling number. The statistical uncertainties of horizontal and vertical reflectivities are identical (0.28 dB). On the other hand, the statistical uncertainties of Doppler velocity (spectrum width) are 2.2 times (1.6 times) larger at the vertical channel. The reflectivity calibration of KCR is also performed using X-band vertically pointing radar (VertiX) and 2-dimensional video disdrometer (2DVD). Since the monitoring of calibration values is useful to evaluate radar condition, the variation of calibration is monitored for five rain events. The average of calibration bias is 10.77 dBZ and standard deviation is 3.69 dB. Finally, the statistical characteristics of cloud properties have been investigated during two months in autumn using calibrated reflectivity. The percentage of clouds is about 26% and 16% on September to October. However, further analyses are required to derive general characteristics of autumn cloud in Korea.

Two-Port Vector Network Analysis System with a Vector Signal Channel (벡터 전압 수신기를 이용한 2-포트 산란 계수 분석 시스템)

  • Lee, Dong-Joon
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.5
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    • pp.541-548
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    • 2013
  • This paper presents a vector network analysis system for 2-port scattering parameters of microwave devices using some basic microwave instruments/devices such as signal generators, vector voltmeter, directional couplers and frequency mixers. The analytical model and implementation method for scattering parameter measurements - which can replace the vector network analyzers - are presented. The performance of the implemented system is evaluated through 1- and 2-port scattering parameter measurements, respectively. The vector volt signals which determine the scattering parameters are detected in two distinct methods depending on the frequency band of interests; a direct-detection method with a single signal generator and vector voltmeter for relatively low band and a heterodyne method to frequency down-mix associated with an additional signal source as well as frequency mixers for high band are used, respectively. Using these two methods, scattering parameters of UHF and X bands are evaluated and their performances are verified through a comercial vector network analyzer.

Study on the applicability of MIMO Joint Decoding to Dual-Contact Satellite Systems (이중 교신 위성 시스템의 MIMO 공동 복조의 적용성에 대한 연구)

  • Park, Hong Won;Kim, Whan Woo
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.46 no.10
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    • pp.856-867
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    • 2018
  • This paper presents the applicability of MIMO joint decoding to dual-contact satellite systems in which two LEO satellites using X-band frequency band are transmitting each image data to two ground station antennas, simultaneously. When two satellites are closely positioned within the looking angle of the two antennas, each satellite interferes with each other by the relative antenna gain corresponding to an offset angle and this might cause the performance degradation without interference mitigation. To mitigate the performance degradation, SM MIMO techniques for joint decoding are applied. Especially, the relative antenna gain of ground station depending on the angle difference between two satellites in ground station antenna plays an important role in modelling the dual-contact satellite systems. The condition number of MIMO channel including the antenna gain calculated from the mathematical gain pattern model was primarily analyzed. Simulation results showed that the SM MIMO techniques using detection schemes such as ZF-SIC, MMSE-SIC, and ML can be applicable to dual-contact satellite systems.

Implementation of External Memory Expansion Device for Large Image Processing (대규모 영상처리를 위한 외장 메모리 확장장치의 구현)

  • Choi, Yongseok;Lee, Hyejin
    • Journal of Broadcast Engineering
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    • v.23 no.5
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    • pp.606-613
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    • 2018
  • This study is concerned with implementing an external memory expansion device for large-scale image processing. It consists of an external memory adapter card with a PCI(Peripheral Component Interconnect) Express Gen3 x8 interface mounted on a graphics workstation for image processing and an external memory board with external DDR(Dual Data Rate) memory. The connection between the memory adapter card and the external memory board is made through the optical interface. In order to access the external memory, both Programmable I/O and DMA(Direct Memory Access) methods can be used to efficiently transmit and receive image data. We implemented the result of this study using the boards equipped with Altera Stratix V FPGA(Field Programmable Gate Array) and 40G optical transceiver and the test result shows 1.6GB/s bandwidth performance.. It can handle one channel of 4K UHD(Ultra High Density) image. We will continue our study in the future for showing bandwidth of 3GB/s or more.

Design of Security Module using Key Exchange Protocol in Digital Contents (키 교환 프로토콜을 이용한 디지털콘텐츠 보호 모듈 설계)

  • 권도윤;이경원;김정호
    • The Journal of the Korea Contents Association
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    • v.3 no.3
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    • pp.40-46
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    • 2003
  • In the paper, designed digital contents security module to check unlawfulness reproduction and distribution of digital contents. This paper applied Diffie-Hellman algorithm that use discrete logarithm and random number as primary for public key application to create encryption key that agree each other through communication channel between DCPS and HOST, and applied Triple DES repeat DES 3 times through 2 different encryption key that is selecting ANSI X9.17 that is key management standard, ISO 8732 and PEM(Privacy-Enhanced Mail) etc. by secondary protection for safe transmission of digital contents in transmission line. Designed security module consist of key exchange module, key derivation module and copy protection processing module. Digital contents security module that design in this thesis checks reproduction and distribution of digital contents by unauthenticated user through user certification function and digital contents encryption function, and protect digital contents transmission line.

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Non-monotonic Size Dependence of Electron Mobility in Indium Oxide Nanocrystals Thin Film Transistor

  • Pham, Hien Thu;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.35 no.8
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    • pp.2505-2511
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    • 2014
  • Indium oxide nanocrystals ($In_2O_3$ NCs) with sizes of 5.5 nm-10 nm were synthesized by hot injection of the mixture precursors, indium acetate and oleic acid, into alcohol solution (1-octadecanol and 1-octadecence mixture). Field emission transmission electron microscopy (FE-TEM), High resolution X-Ray diffraction (X-ray), Nuclear magnetic resonance (NMR), and Fourier transform infrared spectroscopy (FT-IR) were employed to investigate the size, surface molecular structure, and crystallinity of the synthesized $In_2O_3$ NCs. When covered by oleic acid as a capping group, the $In_2O_3$ NCs had a high crystallinity with a cubic structure, demonstrating a narrow size distribution. A high mobility of $2.51cm^2/V{\cdot}s$ and an on/off current ratio of about $1.0{\times}10^3$ were observed with an $In_2O_3$ NCs thin film transistor (TFT) device, where the channel layer of $In_2O_3$ NCs thin films were formed by a solution process of spin coating, cured at a relatively low temperature, $350^{\circ}C$. A size-dependent, non-monotonic trend on electron mobility was distinctly observed: the electron mobility increased from $0.43cm^2/V{\cdot}s$ for NCs with a 5.5 nm diameter to $2.51cm^2/V{\cdot}s$ for NCs with a diameter of 7.1 nm, and then decreased for NCs larger than 7.1 nm. This phenomenon is clearly explained by the combination of a smaller number of hops, a decrease in charging energy, and a decrease in electronic coupling with the increasing NC size, where the crossover diameter is estimated to be 7.1 nm. The decrease in electronic coupling proved to be the decisive factor giving rise to the decrease in the mobility associated with increasing size in the larger NCs above the crossover diameter.

Electrical Characterization of Amorphous Zn-Sn-O Transistors Deposited through RF-Sputtering

  • Choi, Jeong-Wan;Kim, Eui-Hyun;Kwon, Kyeong-Woo;Hwang, Jin-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.304.1-304.1
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    • 2014
  • Flat-panel displays have been growing as an essential everyday product in the current information/communication ages in the unprecedented speed. The forward-coming applications require light-weightness, higher speed, higher resolution, and lower power consumption, along with the relevant cost. Such specifications demand for a new concept-based materials and applications, unlike Si-based technologies, such as amorphous Si and polycrystalline Si thin film transistors. Since the introduction of the first concept on the oxide-based thin film transistors by Hosono et al., amorphous oxide thin film transistors have been gaining academic/industrial interest, owing to the facile synthesis and reproducible processing despite of a couple of shortcomings. The current work places its main emphasis on the binary oxides composed of ZnO and SnO2. RF sputtering was applied to the fabrication of amorphous oxide thin film devices, in the form of bottom-gated structures involving highly-doped Si wafers as gate materials and thermal oxide (SiO2) as gate dielectrics. The physical/chemical features were characterized using atomic force microscopy for surface morphology, spectroscopic ellipsometry for optical parameters, X-ray diffraction for crystallinity, and X-ray photoelectron spectroscopy for identification of chemical states. The combined characterizations on Zn-Sn-O thin films are discussed in comparison with the device performance based on thin film transistors involving Zn-Sn-O thin films as channel materials, with the aim to optimizing high-performance thin film transistors.

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Superhydrophilic Surface Modification of Polyvinylidene Fluoride by Low Energy and High Flux ion Beam Irradiation (저에너지 고출력 이온빔을 이용한 polyvinylidene fluoride 표면의 초친수성화)

  • Park Jong-Yong;Jung Yeon-Sik;Choi Won-Kook
    • Korean Journal of Materials Research
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    • v.15 no.6
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    • pp.382-387
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    • 2005
  • Polyvinylidene fluoride (PVDF) surface was irradiated and became superhydrophilic by low energy (180 eV) and high flux $(\~10^{15}/cm{\cdot}s)$ ion beam. As an ion source, a closed electron Hall drift thruster of $\phi=70mm$ outer channel size without grid was adopted. Ar, $O_2$ and $N_2O$ were used for source gases. When $N_2O^+$ and $O_2^+$ reactive gas ion beam were irradiated with the ion fluence of $5\times10^{15}/cm^2$, the wetting angle for deionized water was drastically dropped from $61^{\circ}\;to\;4^{\circ}\;and\;2^{\circ}$, respectively. Surface energy was also increased up to from 44 mN/m to 81 mN/m. Change of chemical component in PVDF surface was analyzed by x-ray photoelectron spectroscopy. Such a great increase of the surface energy was intimately related with the increase of hydrophilic group component in reactive ion irradiated PVDF surfaces. By using an atomic force microscopy, the root-mean-square of surface roughness of ion irradiated PVDF was not much altered compared to that of pristine PVDF.