• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.23-30
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• 1999

We experimented on the sub 50nm patterning using E-beam lithography system. SAL601 negative E-beam resist was used for this experiment. In order to utilize the maximum ability of E-beam system, firstly, we reduced the PR thickness to 100nm, and the field size to 200 ${um}m$. Then PEB (Post Expose Bake) time/temperature, which is one of the very important factors when SAL601 is used, were reduced for minimum line width. In addition, digitizing is optimized for better results. Quantum wire and quantum dot which can be used for nanoscale memory device, such as single electron memory device, are fabricated using these developed lithography techniques.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.1-7
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• 2002

Deep sub-micron bulk CMOS circuits require gate electrode materials such as metal silicide and titanium silicide for gate oxides. Many authors have conducted research to improve the quality of the sub-micron gate oxide. However, few have reported on the electrical quality and reliability of an ultra-thin gate. In this paper, we will recommend a novel shallow trench isolation structure and a two-step TiS $i_2$ formation process to improve the corner metal oxide semiconductor field-effect transistor (MOSFET) for sub-0.1${\mu}{\textrm}{m}$ VLSI devices. Differently from using normal LOCOS technology, deep sub-micron CMOS devices using the novel shallow trench isolation (STI) technology have unique "inverse narrow-channel effects" when the channel width of the device is scaled down. The titanium silicide process has problems because fluorine contamination caused by the gate sidewall etching inhibits the silicide reaction and accelerates agglomeration. To resolve these Problems, we developed a novel two-step deposited silicide process. The key point of this process is the deposition and subsequent removal of titanium before the titanium silicide process. It was found by using focused ion beam transmission electron microscopy that the STI structure improved the narrow channel effect and reduced the junction leakage current and threshold voltage at the edge of the channel. In terms of transistor characteristics, we also obtained a low gate voltage variation and a low trap density, saturation current, some more to be large transconductance at the channel for sub-0.1${\mu}{\textrm}{m}$ VLSI devices.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• Design & Manufacturing
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• v.15 no.4
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• pp.65-71
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• 2021

In the early days of laser invention, it was simply used as a measuring tool, but as lasers became more common, they became an indispensable processing tool in the industry. Short-wavelength lasers are used to make patterns on wafers used in semiconductors depending on the wavelength, such as CO2 laser, YAG laser, green laser, and UV laser. At first, the hole of the PCB board mainly used for electronic parts was not thin and the hole size was large, so a mechanical drill was used. However, in order to realize product miniaturization and high integration, small hole processing lasers have become essential, and pattern exposure for small hole sizes has become essential. This paper intends to analyze the characteristics through patterns by exposing the PCB substrate through DMD and polygon scanner, which are different optical systems. Since the optical systems are different, the size of the patterns was made the same, and exposure was performed under the optimal conditions for each system. Pattern characteristics were analyzed through a 3D profiler. As a result of the analysis, there was no significant difference in line width between the two systems. However, it was confirmed that dmd had better pattern precision and polygon scanner had better productivity.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.111-115
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• 2014

Effect of dynamic electric fields on dielectric breakdown behavior in Cu damascene interconnects was investigated. Among the DC, unipolar, and bipolar pulse conditions, the longest dielectric lifetime is observed under the bipolar condition because backward Cu ion drift occurs when the direction of electric field is changed by 180 degrees and Cu contamination is prohibited as a results. Under the unipolar pulse condition, the dielectric lifetime increases as pulse frequency increases and it exceed the lifetime under DC condition. It suggests that the intrinsic breakdown of dielectrics significantly affect the dielectric breakdown in addition to Cu contamination. As the unipolar pulse width decreases, dielectric bond breakdown is more difficult to occur.

• Journal of Biosystems Engineering
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• v.25 no.6
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• pp.457-462
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• 2000

Boom sprayers have been known by their excellency in field efficiency worker’s safety and pest control efficacy. The boom sprayer in Korea that was developed for paddy field is not suitable for upland field of which shape is irregular and inclination is steep, due to heavy chemical tank long boom width and manual on-off control of spraying. The goal of the study was to develope a boom control system that could control boom angles of left and right boom automatically and independently corresponding to local field slope. The prime mover was selected as a cultivating tractor. Main results of this study were as follows. 1. Ultrasonic sensor whose response time was 0.1s and response angle was within $\pm$20$^{\circ}$was selected to measure distance. Voltage output of the sensor(X, Volt) had a highly significant linear relationship with the vertical distance between the sensor and ground surface(Y, mm) as follows; Y=0.0036X-0.437 2. Left and right section of the boom could be folded up by a position control device(on-off control) which could control the left and right boom independently corresponding to local slope by equalizing distances between the sensor and boom at the center and left/right boom. Most reliable DB(dead band) was experimentally selected to be 75$\Omega$(6cm). 3. At traveling velocity of 0.3~0.5m/s RMS of error between desired and achieved height was less than 4.5cm The developed boom angle controller and boom linkage system were evaluated to be successful in achieving the height control accuracy target of $\pm$10cm.

• Journal of Digital Convergence
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• v.17 no.3
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• pp.161-168
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• 2019

The purpose of this study analyze consumer usage characteristics and product development guide of electronic pen based on TAM theory(Davies, 1989). Research methods apply contents analysis(qualitative research) and Activity/Inactivity analysis of main consumer participation. Research results are as follows. Active consumer indicated 30-49 age, male, office job and research fellow. And they suggested stable power supply system, App connected pen function extension, add the modified pen function, advanced data recognition of pen, advanced take note ability and stable grip feeling of pen, selected line width, synchronization improvement with other smart device and charging function. These result indicated the importance product improvement diffusion factor of early market to main market. The future research of electric pen focused on different product strategy between electric pen and smart device connected electric pen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.271-274
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• 2013

Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.271-279
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• 2008

In this paper, we investigate interference between short-range radiocommunication devices(SRDs) with frequency hopping spread spectrum(FHSS) and direct sequence spread spectrum(DSSS) methods when they are in the same frequency bands. In order to analyze interference from unwanted emission of SRD with DSSS to that of FHSS, Monte-carlo(MC) simulation method is employed and interference probabilities are calculated. We simulate interference scenarios in accordance with several duty cycles and bandwidths. It is also assumed that the propagation model is free space. The effect of distance between interfering transmitter and victim receiver is analyzed and bit error rate(BER) is simulated. From the interference analysis results, it is shown that duty cycle affects compatibility more than band-width does. Also, we can make sure of the separation distance which satisfies BER criterion when there are only one interfering transmitter and multiple interfering transmitters.

• Journal of IKEEE
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• v.13 no.2
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• pp.208-215
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• 2009

The high efficiency power management IC(PMIC) with DT-CMOS(Dynamic Threshold voltage MOSFET) switching device for portable application is proposed in this paper. Because portable applications need high output voltages and low output voltage, Boost converter and Buck converter are embedded in One-chip. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. DTMOS with low on-resistance is designed to decrease conduction loss. Boost converter and Buck converter, are based on Voltage-mode PWM control circuits and low on-resistance switching device, achieved the high efficiency near 92.1% and 95%, respectively, at 100mA output current. And Step-down DC-DC converter in stand-by mode below 1mA is designed with LDO in order to achive high efficiency.