• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.89-95
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• 1990

A model for bipolar-CMOS buffer design is presented which offers a guideline for determining device sizes based on speed and capacitive load. Closed-form solutions for area optimization are obtained assuming high level injection and channel velocity limitation. The solutions and circuit simulations show that the areas of BICMOS buffers are optimized by scaling the emitter length and the channel width approximately in proportion with capacitive load.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.91-100
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• 1995

This paper represents the lateral first-order mode characteristics for the semiconductor laser diodes using a two-dimensional numerical simulator. In order to analyze the lateral first-order mode characteristics, Helmholtz wave equation is solved twice for the lateral fundamental and the first-order mode considering the mode gain, total losses, and the recombination rate due to the stimulated emission radiation for the each mode independantly. Through this procedure, we find that the lateral first-order mode was easily guided as increasing the stripe width for the index-guiding structures, and that the lateral first-order mode seems to be dominated in the distribution of total light intensity when its output power reaches nearly half of that of the lateral fundamental mode. This results may be used to design the device structure which guides only the lateral fundamental mode.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.1
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• pp.82-86
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• 2012

High-capacity high-voltage pulse generator that can be used for environmental clean-up was developed using transformers. High-voltage pulse is consists of the primary wave and the harmonic wave which are increased as a series circuit using transformers to make pulses. Each transformer has a band-pass characteristics. The output voltage of the pulse width 50[%] was decided. The output voltage of high-voltage pulse generator device was measured as 1.4[kV] (Peak-to-Peak).

• Journal of the Korean Society for Precision Engineering
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• v.31 no.5
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• pp.441-449
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• 2014

Thermoplastic fusion bonding is widely used to seal polymer microfluidic devices and optimal bonding protocol is required to obtain a successful bonding, strong bonding force without channel deformation. Besides, UV modification of the PMMA (poly-methyl methacrylate) is commonly used for chemical or biological application before the bonding process. However, study of thermal bonding for the UV modified PMMA was not reported yet. Unlike pristine PMMA, the optimal bonding parameters of the UV modified PMMA were $103^{\circ}C$, 71 kPa, and 35 minutes. A very low aspect ratio micro channel (AR=1:100, $20{\mu}m$ depth and $2000{\mu}m$ width) was successfully bonded (over 95%, n>100). Moreover, thermal bonding of multi stack PMMA chips was successfully demonstrated in this study. The results may applicable to fabricate a complex 3 dimensional microchannel networks.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.39-44
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• 2003

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.523-526
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• 2000

A dual gate trench emitter IGBT structure is proposed and studied numerically using the device simulator MEDICI. The on-state forward voltage drop latch-up current density turn-off time and breakdown voltage of the proposed structure are compared with those of the conventional DMOS-IGBT and trench gate IGBT structures. The proposed structure forms an additional channel and increases collector current level resulting in reduction of on -state forward voltage drop. In addition the trench emitter increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage when the half trench gate width(Tgw) and trench emitter depth(Ted) are fixed at $1.5\mum\; and\; 2\mum$, respectively

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2003.11a
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• pp.397-401
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• 2003

A resonant type voltage source and power device and a control method using Pulse Density Modulation(PDM) power control and Pulse Width Modulation(PWM) voltage control for plasma sterilization are described. For the stability of discharge in the generating tube, it is desirable that the peak apply voltage is constant The PDM power control is employed for sustaining the voltage constant at any generating tube input power. Moreover, to avoid the influence of input AC voltage fluctuation etc., PWM voltage control with generating tube peak voltage feedback is used. Both functions were confirmed by the experiment with 6.5[㎑], 1.8[㎾] inverter and generating tube. The effect of input synchronous PDM method for input current stabilizing is confirmed also.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.494-495
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.488-489
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different substrate temperature. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET.

• Journal of Chest Surgery
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• v.54 no.4
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• pp.314-318
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• 2021

In this paper, I present the technique of subxiphoid single-port video-assisted thoracic surgery (VATS) thymectomy for thoracic surgeons to perform this procedure safely. This procedure is indicated for all anterior mediastinal masses and may be extended to lung cancer. The patient is placed in the lithotomy position, and the operator should be on the midline. Below the xiphoid process, a skin incision is made 4-5 cm horizontally at a single thumb's width down. Under two-lung ventilation, CO₂ is insufflated, maintaining 10 mm Hg. The fat tissue and thymic tissue are all resected from the sternum and pericardium between both phrenic nerves using an articulated grasper and an energy device. After retrieval of the mass with a wrap bag, a Jackson-Pratt drain is inserted instead of a chest tube. One of the advantages of this procedure is less postoperative pain than intercostal VATS. The subxiphoid approach can be used for bilateral pneumothorax, bilateral pulmonary metastasectomy, and simple lobectomy for both upper lobes and the right middle lobe.