• Journal of IKEEE
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• v.18 no.2
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• pp.214-219
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• 2014

In this paper, the usage of tilt-implanted trench Schottky diode(TITSD) based on silicon carbide is proposed. A tilt-implanted trench termination technique modified for SiC is proposed as a method to keep all the potentials confined in the trench insulator when reverse blocking mode is operated. With the side wall doping concentration of $1{\times}10^{19}cm^{-3}$ nitrogen, the termination area of the TITSD is reduced without any sacrifice in breakdown voltage while potential is confined within insulator. When the trench depth is set to 11um and the width is optimized, a breakdown voltage of 2750V is obtained and termination area is 38.7% smaller than that of other devices which use guard rings for the same breakdown voltage. A Sentaurus device simulator is used to analyze the characteristics of the TITSD. The performance of the TITSD is compared to the conventional trench Schottky diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.413-414
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• 2008

We have studied an organic layer thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top emission device, structure is Al(100nm)ITPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(23nm). While a thickness of hole-transport layer of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm for two devices. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. View-angle dependent emission spectra were measured for the optical measurements. Top-emission devices show that the emission peak wavelength shifts to longer wavelength as the organic layer thickness increases. For instance, it shifts from 490 to 555nm in the thickness range that we used. View-angle dependent emission spectra show that the emission intensity decreases as the view-angle increases. The organic layer thickness-dependent emission spectra show that the full width at half maximum decreases as the organic layer thickness increases. Top emission devices show that the full width at half maximum changes from 90 to 35nm as the organic layer thickness increases. In top-emission device, the microcavity effect is more vivid as the organic layer thickness increases.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.9
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• pp.129-134
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• 2016

This paper studies the high frequency PWM (pulse width modulation) driving technique to increase an optical efficiency and to prevent an optical color quenching of blue laser for head up display on vehicles using digital micro mirror device (DMD) panel and yellow phosphor wheel. The proposed approach adaptively drives the current pulse width modulated signals of high optical power of blue laser to increase the lifetime and to decrease the stem temperature of laser. This method stabilizes the temperature of laser according to the driving environment and the forward current capacity. By the proposed method, the brightness of blue laser is improved by about 37% compared to the continuous waveform current driving method.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.48 no.7
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• pp.523-528
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• 2020

A lateral type MEMS inertial switch was designed on the same principle as spring-mass system. The MEMS switch is used for arming mechanism of the arm-fire device by sensing the applied acceleration. We analyzed the switching capability of the MEMS switch under various acceleration conditions via performance model. Simulation results showed that the MEMS switch works very well at 10 g when the applied acceleration slope does not exceed 10 g/msec. On the other hand, the threshold operating acceleration level simulation exceeded the requirement (10±2 g) due to the width and length of the spring by considering 10% tolerance of the design values. Design modification of doubling the width of the spring, which is difficult to reduce less than 10% tolerance in fabrication process, was proposed after confirming the simulation results comply the requirement.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.10
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• pp.40-47
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• 2016

In this paper, a dual mode buck converter with an ability to change mode is proposed, which is suitable particularly for portable device. The problem of conventional mode control circuit is affected by load variation condition such as suddenly or slowly. To resolve this problem, the mode control was designed with slow clock method. Also, when change from the PFM(Pulse Frequency Modulation) mode to the PWM(Pulse Width Modulation) mode, to use the counter to detect a high load. And the user can select mode transition point in load range from 20mA to 90mA by 3 bit digital signal. The circuits are implemented by using BCDMOS 0.18um 2-polt 3-metal process. Measurement environment are input voltage 3.7V, output voltage 1.2V and load current range from 10uA to 500mA. And measurement result show that the peak efficiency is 86% and ripple voltage is less 32mV.

• The Journal of Korean Academy of Prosthodontics
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• v.36 no.1
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• pp.166-182
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• 1998

The purposes of this study are to evaluate the Korean mandibular dental arch and classify the mandibular dental arch shape and size based on the incisal angle, canine angle, inter second molar width and height. In this study the mandibular study models were fabricated using irreversible hydrocolloid impression material from 225 volunteers with a mean age 23.62 (range 19-29). And the study models were measured with 3-dimensional measuring device and the mandibular dental arch was classified by means of K-means clustering method and visual inspection, then obtained data were analyzed with t-test for the statistical analysis. The results were as follows ; 1. The average canine height was 5.19mm(s.d. 1.17) in both sex, 5.34mm in male, and 4.95mnm in female. And the sexual difference was significant($0). 2. The average second molar height was 39.81mm(s.d. 2.44) in both sex, 40.19mm in male, and 39.21mm in female. And the sexual difference was significant($0). 3. The average inter-canine width was 27.16mm(s.d. 1.78) in both sex, 27.41mm in male, and 26.77mm in female. And the sexual difference was significant($0). 4. The average inter-first molar width was 46.93mm(s.d. 2.67) in both sex, 47.72mm in male, and 45.7mm in female. And the sexual difference was significant($0). 5. The inter-second molar width was average 56.09mm(s.d. 3.01) in both sex, 57.24mm in male, and 54.32mn in woma. And the sexual difference was significant($0). 6. The arch form was classified into three shapes based on the incisal and canine angle. V-shape showed $124.88^{\circ}$ of incisal angle and $141.64^{\circ}$ of canine angle, U-shape showed $152.76^{\circ}\;and\;125.35^{\circ}$, and O-shape showed $138.03^{\circ}\;and \;33.66^{\circ}$ respectively. Each shape distribution was that the V-shape was 14.2%, the U-Shape was 14.7%, and the O-shape was 71.1% of the 225 study models. 7. It was thought that the use of second molar width is more reasonable than height for classifying the dental arch size. The arch size was classified into four sizes based on the second molar width. Size 1 showed range of 42.24-48.23mm, size 2 showed 48.24-54.23mm, size 3 showed 54.24-60.23mm, and size 4 showed 60.24-66.23mm respectively. Each arch size distribution was that the size 1 was 1.3%, the size 2 was 27.1%, the size 3 was 63.6%, and the size 4 was 8.0% of the 225 study models.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.1
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• pp.51-55
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• 2007

This paper investigates the subthreshold behavior of Fin Field Effect Transistor (FinFET). The FinFET is considered to be an alternate MOSFET structure for the deep sub-micron regime, having excellent device characteristics. As the channel length decreases, the study of subthreshold behavior of the device becomes critically important for successful design and implementation of digital circuits. An accurate analysis of subthreshold behavior of FinFET was done by simulating the device in a 3D process and device simulator, Taurus. The subthreshold behavior of FinFET, was measured using a parameter called S-factor which was obtained from the $In(I_{DS})\;-\;V_{GS}$ characteristics. The value of S-factor of devices of various fin dimensions with channel length $L_g$ in the range of 20 nm - 50 nm and with the fin width $T_{fin}$ in the range of 10 nm - 40 nm was calculated. It was observed that for devices with longer channel lengths, the value of S-factor was close to the ideal value of 60 m V/dec. The S-factor increases exponentially for channel lengths, $L_g\;<\;1.5\;T_{fin}$. Further, for a constant $L_g$, the S factor was observed to increase with $T_{fin}$. An empirical relationship between S, $L_g$ and $T_{fin}$ was developed based on the simulation results, which could be used as a rule of thumb for determining the S-factor of devices.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.4
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• pp.524-530
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• 2002

Micro electric spark discharge device was fabricated on a FOTURAN glass wafer using MEMS processing technique and its performance of electron discharge and subsequent formation of ignition kernel were tested. Micro electric spark device is an essential subsystem of a power MEMS that has been under development in this laboratories. In a combustion chamber of sub millimeter scale depth, spark electrodes are formed by electroplating Ni on a base plate of FOTURAN glass wafer. Optimization of spark voltage and spark gap is crucial for stable ignition and endurance of the electrodes. Namely, wider spark gaps insures stable ignition but requires higher ignition voltage to overcome the spark barrier. Also, electron discharge across larger voltage tends to erode the electrodes limiting the endurance of the overall system. In the present study, the discharge characteristics of the proptotype ignition device was measured in terms of electric quantities such as voltage and currant with spark gap and end shape as parameters. Discharge voltage shows a little decrease in width of less than 50㎛ and increases with electrode gap size. Reliability test shows no severe damage over 10$\^$6/ times of discharge test resulting in satisfactory performance for application to proposed power MEMS devices.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.10
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• pp.1957-1964
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• 1994

In this thesis, a Synthetic Aperture Rarar Processor that is possible real-time handling is implemented using CW(Continuose Wave) laser as a light source, CCD(charge Coupled Device) as a time integrator, and AOD(Acousto-Optic Device) as the space integrator. One of the advantages of the proposed system is that it does not require driving circuits of the light source. To implement the system, the linear frequency modulation(chirp) technique has been used for radar signal. The received data for the unit target was processed using 7.80 board and accompanying electronic circuits. In order to reduce the smear effect of the focused chirp signal which occurs Bragg diffrection angle of the AOD has been utilized to make sharp pulses of the laser source, and the pulse made synchronized with the chirp signal. Experiment and analysis results of the data and images detected from CCD of the proposed SAR system demonstrated that detection effect is degrated as the unit target distance increases, and the resolving power is improved as the bandwidth of the chirp signal increases. Also, as the pulse width of the light source decreases, the smear effect has been reduced. The experimental results assured that the proposed system in this papre can be used as a real time SAR processor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1266-1272
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• 2012

An InGaZnO thin film transistor with different gate lengths and widths have been fabricated and their device degradations with device sizes have been also performed after negative gate bias stress. The threshold voltage and subthreshold swing have been decreased with decrease of gate length. However, the threshold voltages were increased with the decrease of gate lengths. The transfer curves were negatively shifted after negative gate stress and the threshold voltage was decreased. However, the subthreshold swing was not changed after negative gate stress. This is due to the hole trapping in the gate dielectric materials. The decreases of the threshold voltage variation with the decrease of gate length and the increase of gate width were believed due to the less hole injection into gate dielectrics after a negative gate stress.