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Full-Color Phosphorescent OLEDs: Maximizing Performance Today for Small-Area Portable Products and Tomorrow for TVs

  • Brown, Julie J.;Adamovich, Vadim.I.;Ma, Bin;D’Andrade, Brian;Kwong, Raymond C.;Weaver, Michael S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.427-430
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    • 2007
  • Phosphorescent OLED technology is a core technology driver for OLED display and lighting products due to the inherent and demonstrated efficiency advantages. Here we present recent results in our continued advancements of PHOLED power efficiency and operational stability with focus on narrowing emission line-width, reducing voltage, and overall design for maximizing device lifetime.

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Relationship Between Angle of Metatarsophalangeal Joint and Abductor Hallucis in Hallux Valgus (젊은성인 엄지발가락가쪽휨증의 발허리발가락관절 각도와 엄지벌림근의 관계)

  • Kang, Sun-Young;Choung, Sung-Dae;Kim, Moon-Hwan;Jeon, Hye-Seon
    • The Journal of Korean Physical Therapy
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    • v.26 no.2
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    • pp.56-61
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    • 2014
  • Purpose: The aim of this study was to investigate relationship between the angle of the first metatarsophalangeal joint (1st MPJ) and the dimensions of the abductor hallucis; dorso-plantar (DP) thickness, medio-lateral (ML) width, and cross-sectional area (CSA), in subjects with and without hallux valgus. Methods: Sixty feet, mean (SD) age of 22.5 (2.1) years old, were included in this study (hallux valgus = 30; control = 30). An X-ray device was used for measurement of the angle of the 1st MPJ, and an ultrasound system was used for determination of mean (SD) DP thickness, ML width, and CSA of the abductor hallucis muscle in each foot from three trials. Results: The results showed the DP thickness, ML width, and CSA of the abductor hallucis did not differ significantly between subjects with and without hallux valgus. In addition, the correlations between the angle of the 1st MPJ and DP thickness, ML width, and CSA of the abductor hallucis showed poor correlation (Pearson r=-0.09, -0.20, and -0.18, respectively). Conclusion: Based on these findings, we speculate that morphological changes to the abductor hallucis muscle cannot be representative of the angle of the 1st MPJ, and also cannot be used in differentiation between subjects with and without hallux valgus.

Investigation on the integrated transfer function characteristics for the buffeting response prediction of elongated structures

  • Yi Su;Mingshui Li;Jin Di;Yang Yang;Shaopeng Li
    • Wind and Structures
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    • v.37 no.6
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    • pp.399-412
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    • 2023
  • Previous studies have shown that the integrated transfer function (ITF) is independent of turbulence characteristics and can be effectively applied to predict the buffeting response of elongated structures, assuming that the strip hypothesis is valid. However, existing research has not effectively identified the ITF through segment model vibration tests, and the influence of the 3D effect on the accuracy of the strip hypothesis and the characteristics of the ITF in wind tunnel tests has not been quantitatively studied. A segment model vibration measurement device that can change a test model's span-width ratio was designed in this study. An airfoil section and a streamlined box girder section structure were taken as the background, and their ITFs were effectively identified under different L/B (L denotes the turbulent integral scale and B denotes the structural width) and model span-width ratios. The influence laws of the 3D effect on the accuracy of the strip hypothesis and ITF identification in wind tunnel tests were systematically investigated. The results showed that L/B and the structural span-width ratio are two significant controlling factors that affect the accuracy of the strip hypothesis and ITF identification. The research provides an effective experimental method for accurately predicting the buffeting response of elongated structures based on ITFs identified through segment model vibration tests.

Effects of Various Growing Conditions of the Mat-type Seedlings on the Cutting forces for ower Rice Transplanter. (Mat묘의 육모조건이 이앙기의 소요전단력에 미치는 영향)

  • 허민근;김성래
    • Journal of Biosystems Engineering
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    • v.4 no.1
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    • pp.48-57
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    • 1979
  • In order to obtain a standard reference for designing an adequate power rice transplanter, the cutting forces depending upon variety of seedling, sowing density, seedling age and soil moisture content of mat-type seedling were measured by the rice transplanter installed with force measuring device of dynamic strain gage system in the laboratory. The result of this study are summarized as follows : 1. Cutting velocity and acceleration transplanting hoe obtained from jinematic analysis of planting mechanism was 1.32m/sec and 81.5m/$sec^2$ when planting crank-shaft rpm was 160. 2. Little difference between cutting forces on 30-days old seelings of japonica and Indica type was observed, as the cutting forces determined were 2.0kg per hill for Japonica type and 2.1kg per hill for Indica type. 3. Cutting forces determined on 40-days old seedlings were 2.5kg, 2.3kg, 3.1kg and 2.9kg per hill for Milyang No.15, Tongil, Akibare and Milyang No.23 compared to the other varieties. 4. The cutting force was not greatly affected by the sowing densities , only five percent of differences were observed epending upon the sowing densities. 5. Cutting forces were 2.7kg and 2.0kg per hill on 40-days old seedlings and 30-days old seedlings respectively. About 38 percent of more forces was required in cutting 40-days old seedling than in cutting 30-days old seedlings. 6. More cutting forces were required as soil moisture content of mat-type seedling was decreased. 7. Root length after cutting by the planting hoe and their relationships with soil moisture content on 30-days old seedlings, are as follows ; $y=4.147-11.384x+ 28.854x^2$ where , $y$=root length after cutting. (cm) , $x$=soil ture content of mat type seedlings.(%, d.b.) 8. Cutting forces were varied with the width of cuttings ; those on 40-days old mat type seedlings were 2.7kg and 2.2kg per hill when cutting with 14 mm and 10mm of width respectively, about 32 percent of more forces was required when cuting with 14mm of width compared to 10mm of width.

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Device Design of Vertical Nanowire MOSFET to Reduce Short Channel Effect (단채널 현상을 줄이기 위한 수직형 나노와이어 MOSFET 소자설계)

  • Kim, Hui-jin;Choi, Eun-ji;Shin, Kang-hyun;Park, Jong-tae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2015.10a
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    • pp.879-882
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    • 2015
  • In this work, we have analyzed the characteristics of vertical nanowire GAA MOSFET according to channel width and the type of channel doping through the simulation. First, we compared and analyzed the characteristics of designed structures which have tilted shapes that ends of drains are fixed as 20nm and ends of sources are 30nm, 50nm, 80nm and 110nm. Second, we designed the rectangular structure which has uniform width of drain, channel and source as 50nm. We used it as a standard and designed trapezoidal structure which is tilted so that the end of drain became 20nm and reverse trapezoidal structure which is tilted so that the end of source became 20nm. We compared and analyzed the characteristic of above three structures. For the last, we used the rectangular structure, divided its channel as five parts and changed the type of the five parts of doping concentration variously. In the first simulation, when the channel width is the shortest, in the second, when the structure is trapezoid, in the third, when the center of channel is high doped show the best characteristics.

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The analysis of leakage current of InGaAsP/InP PBH-LD fabricated by LPE (LPE 방법으로 제작된 InGaAsP/InP PBH-LD의 누설전류해석)

  • 최미숙;김정호;홍창희
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.481-485
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    • 2002
  • In this study, we fabricated the PBH-LD by meltback method using the LPE. The PBH-LDs are analyzed the leakage current that flows through leakage current path like the p-n diode and p-n-p-n current blocking layer. We observed the variation of threshold current with the leakage width $W_{ι}$. As a consequence, we confirmed that the threshold current became low in the decrease of the leakage width and in the increase of the ratio of specific resistivity of leakage region to active region. We also compared between the calculated threshold current in the absence of leakage region and the measured threshold current in the device. As a result, the ratio of specific resistivity was about 0.5 in the measured LDs, which have the width of a active layer of 1.4${\mu}{\textrm}{m}$ and leakage width of 0.6${\mu}{\textrm}{m}$.

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A Study on the Circuit Design Method of CNTFET SRAM Considering Carbon Nanotube Density (탄소나노튜브 밀도를 고려한 CNTFET SRAM 디자인 방법에 관한 연구)

  • Cho, Geunho
    • Journal of IKEEE
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    • v.25 no.3
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    • pp.473-478
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    • 2021
  • Although CNTFETs have attracted great attention due to their ability to increase semiconductor device performance by about 13 times, the commercialization of CNTFETs has been challenging because of the immature deposition process of CNTs. To overcome these difficulties, circuit design method considering the known limitations of the CNTFET manufacturing process is receiving increasing attention. SRAM is a major element constituting microprocessor and is regularly and repeatedly positioned in the cache memory; so, it has the advantage that CNTs can be more easily and densely deposited in SRAM than other circuit blocks. In order to take these advantages, this paper presents a circuit design method for SRAM cells considering CNT density and then evaluates its performance improvement using HSPICE simulation. As a result of simulation, it is found that when CNTFET is applied to SRAM, the gate width can be reduced by about 1.7 times and the read speed also can be improved by about 2 times when the CNT density was increased in the same gate width.

Enhanced Luminous Intensity in LEDs with Current Blocking Layer (전류 차단 층을 갖는 LED의 향상된 광세기)

  • Yoon, Seok-Beom;Kwon, Kee-Young;Choi, Ki-Seok
    • Journal of Digital Convergence
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    • v.12 no.7
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    • pp.291-296
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    • 2014
  • Inserting a $SiO_2$ layer underneath the p-pad electrode as the current blocking layer (CBL) structure and extending p-metal finger patterns, the GaN LEDs using an indium-tin-oxide (ITO) layer show the improved light output intensity, resulting from better current spreading and reduced light loss on the surface of p-pad metal. The LEDs with an oxide layer of $100{\mu}m$-pad-width and $6{\mu}m$-finger-width have better light output intensities than those with an oxide layer of $105{\mu}m$-pad-width and $12{\mu}m$-finger-width. Using the ATLAS device simulator from Silvaco Corporation, the current density distributions on the active layer in CBL LEDs have been investigated.

TREATMENT OF MIDFACE DEFICIENCY ON ADULT CLEFT LIP AND PALATE INDIVIDUALS BY DISTRACTION OSTEOGENESIS : CASE REPORT (골신연술에 의한 성인 구순구개열자의 중안면함몰의 개선: 증례보고)

  • Son, Woo-Sung;Kang, Sang-Wook;Kang, Dae-Geun;Kim, Jong-Ryoul
    • Maxillofacial Plastic and Reconstructive Surgery
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    • v.31 no.1
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    • pp.53-60
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    • 2009
  • Maxillary deficiency, anterior cross bite, constriction of maxillary arch, malaligned teeth are frequently observed in patients with cleft lip and palate. Surgery and orthodontics, combined intervention are needed to correct maxillary deficiency. Distraction osteogenesis that currently used has many advantages like less relapse tendency, more advancement of maxilla, capable in growing patients. In case 1, 18 years old girl with BCLP had severe midfacial deficiency and multiple missing of teeth. LeFort I osteotomy, followed by maxillary distraction osteogenesis utilizing rigid external distraction device(RED) system, was performed. After a 6-day latency period, distraction proceeded at a rate of 1mm per day (at 1st week, 1.5mm/day). Total advancement was 19mm. The RED device left in place for the additional 4 weeks for consolidation. After the RED device was removed, face mask was applied with elastic traction for 5 weeks. After achieving acceptable facial appearance and occlusion, orthodontic appliance was removed. The results after 4 years follow-up was sustained pretty well without aggravation of velopharyngeal function. In case 2, 22 years old man with UCLP had severe midfacial deficiency and palatally erupted upper 2nd premolars due to arch length discrepancy, but the anterior segment of maxillary did not show constriction and crowding. patient had no arch width discrepancy, crowding was concentrated on premolar region. Segmental LeFort I osteotomy was performed. After a 6 - day latency period, using internal distraction device, distraction proceeded at a 0.5mm per day(at 1st week, 0.75 - 1 mm/day). Total advancement was 15mm. After internal distraction device was removed, face mask was applied with elastic traction for 4 weeks. After surgical-orthodontic treatment, facial appearance and occlusion was improved pretty good, and after 46 months follow-up the result was retained well.

A study on frequency response of two-mass system for gyroscope applications (각속도계 적용을 위한 이중 질량 시스템의 주파수 응답에 관한 연구)

  • Hwang, Young-Suk;Jung, Hyoung-Kyoon;Song, Eun-Seok;Baek, Chang-Wook;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • 2007.11a
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    • pp.154-155
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    • 2007
  • This paper describes frequency response of two-mass system for gyroscope applications. The two-mass system of the proposed device is adapted to the sensing part of the gyroscope in this research. Two-mass system has two resonant peaks and wide flat region between two resonant peaks. The resonant frequency of driving part is in this flat region. Therefore, frequency tuning is not necessary for mode matching. In the proposed device, resonant frequency is designed as 7183 Hz in driving part. Mass ratio of two masses in sensing part is 0.1 and device size is 6 mm $\times$ 6 mm. The device is fabricated by SiOG process. The fabricated spring width is increased from $4{\mu}m$ to $4.5{\sim}4.7{\mu}m$, and the measured resonant frequency is 8392 Hz in driving mode. We operated the sensing part using parallel plate of proof mass to verify the sensing part. It is confirmed the device has a wide fiat region in frequency response curve and the resonant frequency of the driving part is in the wide flat region of sensing mode.

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