• 한국정보통신학회논문지
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• 제13권7호
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• pp.1255-1260
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• 2009

마이크로스트립 인터디지털(interdigtal) 여파기는 공진기의 폭, 길이, 공진기 사이의 간격과 탭의 위치로 설계하는데, 설계파라미터의 수를 줄이는 것이 구현 측면에서 유리하다. 본 논문에서는 마이크로스트립 인터디지털 여파기의 설계파라미터 중에서 공진기의 폭을 고정시킨 것과 서로 다른 폭을 갖는 두 종류의 여파기를 국내 UWB(Ultra Wide-Band) 주파수 대역에서 설계 및 구현하였다. 여파기의 성능 측정 결과 공진기의 폭을 고정한 low-band high 여파기의 삽입손실은 1.49dB, -10dB 대역폭은 750MHz였고, 4.8GHz에서 -35.7dB의 감쇄특성을 가졌으며, S11은 -13dB 이하로 측정되었다. 공진기의 폭이 서로 다른 low-band 여파기는 삽입손실 1.6dB, -10dB 대역폭은1.63GHz로 측정되었고, S11은 -8dB 이하로 측정되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.344-345
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• 2012

The Gate-Induced-Drain-Leakage (GIDL) current with channel doping and width dependence are characterized. The GIDL currents are found to increase in MOSFETs with higher channel doping levels and the observed GIDL current is generated by the band-to-band-tunneling (BTBT) of electron through the reverse-biased channel-to-drain p-n junction. A BTBT model is used to fit the measured GIDL currents under different channel-doping levels. Good agreement is obtained between the modeled results and experimental data. The increase of the GIDL current at narrower widths in mainly caused by the stronger gate field at the edge of the shallow trench isolation (STI). As channel width decreases, a larger portion of the GIDL current is generated at the channel-isolation edge. Therefore, the stronger gate field at the channel-isolation edge causes the total unit-width GIDL current to increases for narrow-width devices.

• Bulletin of the Korean Chemical Society
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• 제22권8호
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• pp.807-815
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• 2001

Two-dimensional (2D) correlation method, which generates the synchronous and the asynchronous 2D spectrum by complex cross correlation of the Fourier transformed spectra, is an analysis method for the changes of the sample spectrum induced by vari ous perturbations. In the present work, the 2D electronic correlation spectra have been simulated for the cases where the sample spectrum composed of two gaussian bands changes linearly. When only the band amplitudes of the sample spectrum change, the synchronous spectrum shows strong peaks at the band centers of the sample spectrum, but the asynchronous spectrum does not make peaks. When the sample spectrum shifts without changing intensity and width, the synchronous spectrum shows peaks around the initial and final positions of the band maximum and the asynchronous spectrum shows long peaks spanning the shifting range. The band width change produces the complex 2D correlation spectra. When the sample spectrum shifts with band broadening, the width change by 50% of full width at half maximum (FWHM) does not give so large an effect on the correlation spectrum as the spectral shift by one half of FWHM of the sample spectrum.

• 한국염색가공학회지
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• 제27권4호
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• pp.270-274
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• 2015

Molecules always show broad absorption band envelopes, and this results from the vibrational properties of bonds. The width of an absorption band can have an important influence on the color of a dye. A narrow band imparts a bright, spectrally pure color to the dye, whereas a broad band can give the same hue, but with a much duller appearance. Typically, half-band widths of cyanine dyes are about 25nm compared to value of over 50nm for typical merocyanine dyes. Thus, cyanine dyes are exceptionally bright. The factors influencing the width of an absorption band can be understood with reference to the Morse curves. The width of the absorption band depends on how closely the bond order of the molecules in the first excited state resembles that in the ground state. We have quantitatively evaluated the "molecular structure-absorption band shape" relationship of dye molecules by means of Pariser-Parr-Pople Molecular Orbital Method(PPP-MO).

• 패션비즈니스
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• 제10권4호
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• pp.70-77
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• 2006

The purpose of this study is to evaluate the differences of visual image by variations in the location and width of the waist band of the one-piece dress. The stimuli are 24 samples: 8 variations of the location of the waist band and 3 variations of the width of the waist band. The data has been obtained from 50 fashion design majors. The data has analyzed by Factor Analysis, Anova, Scheff's Test and the MCA method. The results of the study are as follows. According to the result of factor analysis of the visual image based on the changes in the location and width of waist bands, three factors were identified- attractiveness, elegance and practicality. Among them, attractiveness was found to be the most important. The visual image was evaluated positively when waist bands were positioned above the natural waist line and negatively when waist bands were positioned below the natural waist line regardless of their width. In addition, the visual image based on the width of waist bands for one-piece dress was the most positive when the width was 4.5cm. No significant difference was observed in the visual image according to band width when the waist bands were positioned below the natural waist line. The interaction of visual image according to the location and width of waist bands for one-piece dress did not appear. As the main effect, significant differences were observed in all of the three factors according to the location of waist bands, but only two factors excluding elegance showed some difference according to the width of waist bands. When multiple classification analysis was applied to the factors without interaction, the location of waist bands appeared to have more significant effect on visual image than the width of waist bands.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.1267-1270
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• 1998

This paper analyzes the characteristics of wide-band one-shot beam formed by using all sensors of array at once, as variation of weighting width. Gaussian function is applied to each sensor as a role of weighting. As the results of the simulation for nested linear array having 17 sensors for each octave, as the width goes wider the directivity index(DI) becomes lower but more even and the variation of beamwidth becomes smaller. It is confirmed, therefore, that weighting width is carefully decided in consideration of DI level, DI stability and the beamwidth.

• 한국세라믹학회지
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• 제31권1호
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• pp.11-16
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• 1994

The impedance matching solution map is not a sufficient method for designing the broad-band absorber because of its difficulty to get numerical data about practical band-width. Therefore, we develope a new method to design the broad-band absorber. The complex permeability limits, which is necessary for designing the broad-band absorber in C-X band (4 GHz~12.4 GHz) were investigated and application was also examined. The complex permeability limits represent the frequency dependence of the complex permeability at a practical frequency band. These complex permeability limits can be used effectively to design broad-band single-layered absorber because they offer numerical data about the band-width in the case of various dielectric loss tangent, practical frequency bands and permitted reflection losses of an absorber.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.612-612
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.145.2-145.2
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.166-166
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• 2000

We studied electronic structure of magnetic semiconductors EuO, EuS, and EuTe. The photoemission spectra show localized Eu 4f states and broad anion p bands. As the size of anion increases from oxygen to tellurium, anion p band width increases and eventually overlaps Eu 4f states. Hence in EuO and EuS, Eu 4f states are the highest occupied stated lying above anion p band, while Te 5p band spreads widely over Eu 4f states to become valence band maximum in EuTe. It was also observed that Eu 4f states have width of 0.7eV and dispersion of 0.2eV in EuS by angle resolved photoemission spectroscopy. The width of the 4f spectra mainly originates from atomic multiplets, but the much larger dispersion than that of Eu metal is due to p-f mixing.