• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.848-850
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• 2001

In this work, we investigated on the white-colored ribbon fiber synthesized from GaN powder. We convinced the formation of monoclinic phase $\beta$-Ga$_2$O$_3$from the X-ray diffraction pattern on ribbon fiber. The 10 K PL spectrum consisted with the strong emission band caused by self-activated optical center at 3.464 eV with the full-width at half maximum of 48 meV and the impurity related emission bands. Through this work, the optical properties and the electrical conductivity of $\beta$-Ga$_2$O$_3$, it will be useful for the fabrication of optoelctronic devices operating in visible spectrum region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.351-354
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• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly (N- vinylcarbazole) ( PVK) , 2,5-bis (5-tert-butyl -2- benzoxaBoly) thiophene ( BBOT) , N,N-diphenyl-N,N- (3-methyphenyl) -1,1-biphenyl-4, 4-thiamine(TPD) and poly(3-hexylthiophene) (P3HT) deposited by LB(Langumuir-Boldgett) method. From the AFM(atomic force microscope) images, the monolayer containing 30% of AA(arachidic acid) showed a roughness value of 28$\AA$. In the voltage-current characteristics of ITO/Emitting layer/BBOT/LiF/A1 devices, current density much smaller than that of the spin-coated devices having a same thickness.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.259-262
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• 2005

Image retention is a kind of fatal shortcoming of the AC PDPs for realizing high-quality picture. In this work, the measurement method of image retention was proposed using temporal measurement of luminance, CIEXYZ tristimulus values, IR emission of reset pulse, and temperaturel. On the base of temporal measurement of luminance, CIEXYZ tristimulus value, and IR emission of reset pulse, the retention time of Ne+5%Xe gas-mixture discharge was about 2 hours after white window image. However, it was about 20 minute on the base of temporal measurement of temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.235-238
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• 2009

BaMg$Al_{10}O_{17}$ (BAM) co-doped with $Eu^{2+}$ and $Mn^{2+}$ was synthesized in a solid-state reaction and their luminescence properties were investigated as functions of the concentrations of the sensitizer and activator. BAM:$Eu^{2+}$ had a broad blue emission band at 450 nm and BAM:$Mn^{2+}$ exhibited green emission at 514 nm. The energy transfer from $Eu^{2+}$ to $Mn^{2+}$ was mainly of the resonance-type via an electric dipole-quadrupole interaction. Additionally, the addition of various fluxes such as $AlF_3$ and $BaF_2$ in the synthesis improves the moist and thermal stability. This is particularly important for the phosphor in white light emitting diodes (LEDs).

• Journal of Korean Society of Forest Science
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• v.99 no.5
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• pp.750-754
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• 2010

Among the environmental conditions employed in micropropagation, light quality plays an important role in growth, specially morphogenesis and photosynthesis. The effect of radiation quality (350-740 nm) on the development and growth of zygotic embryos and in vitro plantlets of open-pollinated chestnut (Castanea crenata S. et Z.) were studied. Two types of explants were exposed for 4 weeks to cool white (W, as control), monochromatic red (R, peak emission 650 nm), monochromatic blue (B, peak emission 440 nm), red+blue (R+B, 1:1), or red+far-red (R+Fr, 1:1, far-red peak emission 720 nm) radiation from a light-emitting-diode (LED) system. While the zygotic embryos showed positive photoblastic behavior, their germination was inhibited by blue radiation. Hypocotyl elongation and root development were promoted by red radiation. The emergence of primary leaf and its expansion were faster under blue than under red radiation. In the plantlets, red and red+far-red radiation significantly increased the formation and growth of the root, whereas blue light reduced rooting. Therefore, radiation quality appears to influence some steps in the development of zygotic embryos and plantlets in the chestnut.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• Current Applied Physics
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• v.18 no.11
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• pp.1359-1367
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• 2018

In this work, we investigated the spectroscopic properties of $LiY_xSr_yZrO_{3+{\alpha}:Eu^{3+}$, a red emitting nanophosphor based on $SrZrO_3$ perovskite. The synthesis process was an auto-combustion process. X-ray diffractograms show the orthorhombic structure of $SrZrO_3$. Photoluminescence (PL) excitation spectra display a split charge transfer band revealing the presence of two possible sites for the $Eu^{3+}$ ions. The emission spectra at 231 nm excitation illustrate the dominance of the $^5D_0-^7F_1$ transition, which is an indication that the smaller sized $Eu^{3+}$ ions are mostly situated at the more ordered (symmetric) $Sr^{2+}$ sites. The emission spectra at 292 nm & 397 nm excitations show the dominance of $^5D_0-^7F_2$ transition which suggests some of the $Eu^{3+}$ ions are also situated at the distorted $Zr^{4+}$ sites. Both the intensity parameters, asymmetry ratio and the decay lifetimes of the nanophosphors show dependence on $Y^{3+}$ concentration, signifying a modification in the host structure. Maximum quantum efficiency value of ${\approx}46%$ was obtained for the nanophosphors which indicate the need for improvement for practical applications. CIE coordinates show the suitability of this phosphor for both red emission in LED and as a complementary colour for white LED applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.5
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• pp.233-240
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• 2012

White LEDs (light-emitting diodes) are promising new-generation light sources which can replace conventional lamps due to their high reliability, low energy consumption and eco-friendly effects. This paper briefly reviews recent progress of oxy/nitride host phosphor and quantum dot materials with broad excitation band characteristics for phosphor-converted white LEDs. Among oxy/nitride host materials, $M_2Si_5N_8$ : $Eu^{2+}$, $MAlSiN_3$ : $Eu^{2+}$ M-SiON (M = Ca, Sr, Ba), ${\alpha}/{\beta}$-SiAlON : $Eu^{2+}$ are excellent phosphors for white LED using blue-emitting chip. They have very broad excitation bands in the range of 440~460 nm and exhibit emission from green to red. In this paper, In this review we focus on recent developments in the crystal structure, luminescence and applications of the oxy/nitride phosphors for white LEDs. In addition, the application prospects and current trends of research and development of quantum dot phosphors are also discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1149-1152
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• 2008

Nitride semiconductor based light-emitting diodes attain a new functionality of polychromatic emission by the use of three-dimensionally faceted microstructures, which may lead to an advanced lighting technology in which the light source spectra are synthesized so as to meet requirements of the application.

• The Bulletin of The Korean Astronomical Society
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• v.28 no.2
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• pp.30-30
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• 2003