• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.89-90
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• 2006

We synthesized emissive materiaJs, nameJy $Zn(HPB)_2$. The fundamentaJ structures of the OLEDs were ITO / NPB (40 nm) $Zn(HPB)_2$ (40 nm) / $Alq_3$:DCJTB (20, 30, or 40 nm) / LiF / AI. We varied the thickness of $Alq_3$:DCJTB from 20 nm to 40nm. We measured current density-voJtage and luminance-voJtage characteristics at room temperature. When the thickness of the Alq3:DCJTB layer was 40 nm, white emission is achieved. The CIE coordinates are (0.32, 0.33) at an applied voltage of 14V.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.683-686
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• 2009

We report inverted white OLEDs fabricated by full wet processes. We utilized inverted structure OLEDs since the structure was better for the realization of full wet fabrication of OLEDs. It was found that the performance of inverted OLEDs is comparable to that of conventional OLEDs. In this presentation, we will discuss in detail a few important issues on the full wet fabrication of OLEDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.451-456
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• 2013

To study emission properties of white phosphorescent organic light emitting devices (PHOLEDs), we fabricated white PHOLEDs of ITO(150 nm) / NPB(30 nm) / TcTa(10 nm) / mCP(7.5 nm) / light-emitting layer(25 nm) / UGH3(5 nm) / Bphen(50 nm) / LiF(0.5 nm) / Al(200 nm) structure. The total thickness of light-emitting layer with co-doping and blue-doping/co-doping using a host-dopant system was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir$(acac) in UGH3 as host, respectively. The OLED characteristics were changed with position and thickness of blue doping layer and co-doping layer as light-emitting layer and the best performance seemed in structure of blue-doping(5 nm)/co-doping(20 nm) layer. The white PHOLEDs showed the maximum current density of $34.5mA/cm^2$, maximum brightness of $5,731cd/m^2$, maximum current efficiency of 34.8 cd/A, maximum power efficiency of 21.6 lm/W, maximum quantum efficiency of 15.6%, and a Commission International de L'Eclairage (CIE) coordinate of (0.367, 0.436) at $1,000cd/m^2$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.8 no.2
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• pp.25-31
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• 2009

The image processing methods are widely used in many industrial fields to detect defections in inspection devices. In this study an image processing method was conducted for the detection of abnormal pixels in a OLED(Organic Light Emitting Diode) type panel which is used for small size displays. The display quality of an OLED device is dependent on the pixel formation quality. So, among the so many pixels, to find out the faulty pixels is very important task in manufacturing processing or inspection division. We used a line scanning type BW(Black & White) camera which has very high resolution characteristics to acquire an image of display pixel patterns. And the various faulty cases in pixel abnormal patterns are considered to detect abnormal pixels. From the results of the research, the normal BW pixel image could be restored to its original color pixel.

• Proceedings of the KIEE Conference
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• 2008.05a
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• pp.167-168
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• 2008

Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely $Zn(HPB)_2$ and Zn(HPB)q, which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and $Zn(PQ)_2$. The fundamental structures of the white OLEDs were ITO / NPB (40 nm) / $Zn(HPB)_2$ (40 nm) / $Zn(PQ)_2$ (20 nm) / LiAl (120 nm). As a result, we obtained a maximum luminance of $4200cd/m^2$ at a current density of $440mA/cm^2$. The CIE (Commission International de l'Eclairage) coordinates are (0.319, 0.338) at an applied voltage of 10 V.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.93-97
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• 2013

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with co-doping and blue/co-doping emitting layer (EML) structures were fabricated using a host-dopant system. The total thickness of light-emitting layer was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir(acac)$ in UGH3, respectively. In case of co-doping structure, applying micro lens array film showed efficiency improvement from the current efficiency 78.5 cd/A and power efficiency 40.4 lm/W to the current efficiency 131.1 cd/A and power efficiency 65 lm/W and blue / co-doping structure showed efficiency improvement from the current efficiency 43.8 cd/A and power efficiency 22 lm/W to the current efficiency 69 cd/A and power efficiency 32 lm/W.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.2018-2019
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• 2007

Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely $Zn(HPB)_2$ and Zn(HPB)q, which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and Zn(HPB)q. The fundamental structures of the white OLEDs were ITO / NPB (40 nm) / $Zn(HPB)_2$ (40 nm) / Zn(HPB)q (20 nm) / LiAl (120nm). As a result, we obtained a maximum luminance of $15325cd/m^2$ at a current density of $997\;mA/cm^2$. The CIE (Commission International de l'Eclairage) coordinates are (0.28, 0.35) at an applied voltage of 9.75 V.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.11B
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• pp.1403-1412
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• 2011

This study performed a detecting research of promising R&D field utilizing intuitive methodology regarding OLED illumination industry. For this, 69 professionals of the illumination industry in Korea were composed as a panel to hold an in-depth interview and survey for 1 month. The study classified the OLED illumination industry as 4 fields of panel, material/component for panel, manufacturing equipment, and lighting system, and selected core technology for each field, and divided it into a total of 14 possible fields for R&D. As a result of evaluating the technological competitive power for each field, the field in Korea which received the highest technological competitive power was OLED panel, and contrarily, technological competitive power of material/component for OLED panel showed the lowest, which requires improvement Meanwhile, evaluating economical aspect, conformity to policy, and effectiveness of R&D in general, 7 promising R&D fields were selected. The 4 core technologies of OLED panel, which are, white, transparent, color change and flexible OLED manufacturing technology were evaluated as the most promising fields, and next, organic material for surface light source, material/component for substrate and equipment for forming large sized substrate were evaluated as promising fields.

• Journal of Korea Society of Industrial Information Systems
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• v.17 no.7
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• pp.81-88
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• 2012

This paper proposed the color reproduction modeling of OLED using standard RGB display. The kinds of non-standard RGB displays are various. And color reproduction of non-standard RGB displays is different by chromaticities of primaries and reference white etc. In this paper, we proposed algorithm that made OLED display's color reproduction to standard CRT monitor using conversion matrix. If using the algorism that is proposed in this paper, we can confirm the reproduced color characteristics to simulation beforehand and improve the performance of existing display. when developing new display, we are expected to be used very usefully.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.53-56
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• 2007

We have fabricated organic white light emitting diodes by mixing two colors from very thin rubrene doped and non-doped DPVBi layers. The device structure was ITO/2-TNATA(15 nm)/${\alpha}$-NPD(35 nm)/DPVBi:rubrene(5 nm)/DPVBi(30 nm)/$Alq_{3}(5\;nm)$/BCP(5 nm)/LiF(0.5 nm)/Al(150 nm). The yellow-emitting rubrene of 0.7 wt % was doped into the blue-emitting DPVBi host for the white light. CIE coordinate of the device was (0.31, 0.33) at 8 V. The color coordinates were stable at wide ranges of driving voltages. The luminance was over $1,000\;cd/m^{2}$ at 8 V and increases to $14,500\;cd/m^{2}$ at 12 V. The maximum current efficiency of the device was 8.2 cd/A at $200\;cd/m^{2}$.