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http://dx.doi.org/10.4313/JKEM.2013.26.6.451

Emission Properties of White Organic Light-Emitting Diodes with Blue Emitting Layer  

Chun, Hyun-Dong (Department of Advanced Materials Science & Engineering, Daejin University)
Na, Hyunseok (Department of Advanced Materials Science & Engineering, Daejin University)
Ju, Sung-Hoo (Department of Advanced Materials Science & Engineering, Daejin University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.6, 2013 , pp. 451-456 More about this Journal
Abstract
To study emission properties of white phosphorescent organic light emitting devices (PHOLEDs), we fabricated white PHOLEDs of ITO(150 nm) / NPB(30 nm) / TcTa(10 nm) / mCP(7.5 nm) / light-emitting layer(25 nm) / UGH3(5 nm) / Bphen(50 nm) / LiF(0.5 nm) / Al(200 nm) structure. The total thickness of light-emitting layer with co-doping and blue-doping/co-doping using a host-dopant system was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir$(acac) in UGH3 as host, respectively. The OLED characteristics were changed with position and thickness of blue doping layer and co-doping layer as light-emitting layer and the best performance seemed in structure of blue-doping(5 nm)/co-doping(20 nm) layer. The white PHOLEDs showed the maximum current density of $34.5mA/cm^2$, maximum brightness of $5,731cd/m^2$, maximum current efficiency of 34.8 cd/A, maximum power efficiency of 21.6 lm/W, maximum quantum efficiency of 15.6%, and a Commission International de L'Eclairage (CIE) coordinate of (0.367, 0.436) at $1,000cd/m^2$.
Keywords
OLED; CIE; White; Phosphorescent; Structure;
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