• 한국재료학회지
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• 제34권2호
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• pp.105-110
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• 2024

Scanning probe microscopy (SPM) has become an indispensable tool in efforts to develop the next generation of nanoelectronic devices, given its achievable nanometer spatial resolution and highly versatile ability to measure a variety of properties. Recently a new scanning probe microscope was developed to overcome the tip degradation problem of the classic SPM. The main advantage of this new method, called Reverse tip sample (RTS) SPM, is that a single tip can be replaced by a chip containing hundreds to thousands of tips. Generally for use in RTS SPM, pyramid-shaped diamond tips are made by molding on a silicon substrate. Combining RTS SPM with Scanning spreading resistance microscopy (SSRM) using the diamond tip offers the potential to perform 3D profiling of semiconductor materials. However, damage frequently occurs to the completed tips because of the complex manufacturing process. In this work, we design, fabricate, and evaluate an RTS tip chip prototype to simplify the complex manufacturing process, prevent tip damage, and shorten manufacturing time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.345-346
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• 2013

InGaN material is being studied increasingly as a prospective material for solar cells. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7 eV for InN to 3.4 eV for GaN by varying of indium composition, which covers almost of solar spectrum from UV to IR. It is essential for better cell efficiency to improve not only the crystalline quality of the epitaxial layers but also fabrication of the solar cells. Fabrication includes transparent top electrodes and surface texturing which will improve the carrier extraction. Surface texturing is one of the most employed methods to enhance the extraction efficiency in LED fabrication and can be formed on a p-GaN surface, on an N-face of GaN, and even on an indium tin oxide (ITO) layer. Surface texturing method has also been adopted in InGaN-based solar cells and proved to enhance the efficiency. Since the texturing by direct etching of p-GaN, however, was known to induce the damage and result in degraded electrical properties, texturing has been studied widely on ITO layers. However, it is important to optimize the ITO thickness in Solar Cells applications since the reflectance is fluctuated by ITO thickness variation resulting in reduced light extraction at target wavelength. ITO texturing made by wet etching or dry etching was also revealed to increased series resistance in ITO film. In this work, we report a new way of texturing by deposition of thickness-optimized ITO films on ITO nano dots, which can further reduce the reflectance as well as electrical degradation originated from the ITO etching process.

• ETRI Journal
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• 제24권4호
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권11호
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• pp.575-580
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• 2001

In this paper, using $500\mum-thickness\; (100)\; silicon\; wafer,\; flat\; 65\mum-thickness$ silicon mirror plates were fabricated through dry etching and wet etching, and $45\mum-depth$ grooved driving electrodes were fabricated through UV-LIGA process. Four shapes of the driving electrode were fabricated: twenty four grooves of the $50\mum-width$, twelve grooves of the $100\mum-width$, six grooves of the $200\mum-width$, and no grooves on the driving electrode. Fabricated mirror plate size and spring size are $2400\times2400\times65\mum3\; and \;500\times10\times65\mum3,$ respectively. Mirror plate parts and driving electrodes were assembled into the scanning mirrors. Measured natural resonance frequencies were about 600Hz which have error within $\pm 2%$ to calculated value. Due to the squeeze effect in the narrow gap between the mirror plate and the driving electrode, measured resonance frequencies were reduced as raising the amplitude of the mirror plate. In a case of driving electrode without grooves, the resonance frequency was reduced largely, compared with a case of driving electrode with grooves. According to the experimental results, squeeze effect was smaller in the driving electrode with smaller-width and many grooves. Therefore, the driving electrode with smaller-width and many grooves was effective in low voltage and high speed operation.

• Current Photovoltaic Research
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• 제2권3호
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• pp.88-94
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• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.

• 한국전기전자재료학회논문지
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• 제26권11호
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• pp.841-845
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• 2013

We give a textured front on silicon wafer for high-efficiency solar cells by using micro contact printing method which uses PDMS (polydimethylsiloxane) silicon rubber as a stamp and SAM (self assembled monolayer)s as an ink. A random pyramidal texturing have been widely used for a front-surface texturing in low cost manufacturing line although the cell with random pyramids on front surface shows relatively low efficiency than the cell with inverted pyramids patterned by normal optical lithography. In the past two decades, the micro contact printing has been intensively studied in nano technology field for high resolution patterns on silicon wafer. However, this promising printing technique has surprisingly never applied so far to silicon based solar cell industry despite their simplicity of process and attractive aspects in terms of cost competitiveness. We employ a MHA (16-mercaptohexadecanoic acid) as an ink for Au deposited $SiO_2/Si$ substrate. The $SiO_2$ pattern which is same as the pattern printed by SAM ink on Au surface and later acts as a hard resist for anisotropic silicon etching was made by HF solution, and then inverted pyramidal pattern is formed after anisotropic wet etching. We compare three textured surface with different morphology (random texture, random pyramids and inverted pyramids) and then different geometry of inverted pyramid arrays in terms of reflectivity.

• ETRI Journal
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• 제16권1호
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• pp.45-57
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• 1994

The effects of reactive ion etching (RIE) of $SiO_2$ layer in $CHF_3/C_2F_6$ on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE : (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, $O_2$, $NF_3$, $SF_6$, and $Cl_2$ plasma treatments. XPS analysis revealed that $NF_3$ treatment is most effective. With 10 seconds exposure to $NF_3$ plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

• 한국재료학회지
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• 제19권1호
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1852-1854
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• 1999

In order to enhance satellite communication system performance, filters are required with the characteristics of sharp skirt, low insertion loss, and high power handling capability. But the performance of microwave passive filters is significantly declined by the conduction losses, especially in case of planar structures using film conductors. By using high temperature superconducting(HTS) film material as the conductor, higher performance could be expected. We have designed and developed narrow bandpass filters using haripin-type superconducting microstrip line for satellite communication. High quality superconducting YBCO thin films have been grown on MgO substrates by pulsed laser deposition(PLD) The deposited YBCO films were patterned by conventional wet-etching process. The transition temperatures of these films had shown 86 - 89 K. The film thicknesses were about 500 nm. Experimental results are presented for the insertion loss and return loss of the filter at 60 K.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.2102-2104
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• 2004

In this study, sheathless electrospray from PDMS/glass microchips with conducting metal emitter tip is described. A chip-based capillary electrophoresis/mass spectrometry (CE/MS) system has advantages of the CE separation and on-line electrospray detection of peptide solution. We have fabricated a new electrospray ionization(ESI) device composed of the metal emitter tip and CE separation channel monolithically in a glass microchip. The separation channel and metal emitter tip are fabricated using a glass wet etching and gold electro plating process, respectively. The fabricated micro electrospray chip was tested by spraying peptide sample for mass spectrometric analysis. Singlely-charged peak and doublely-charged peak of peptide were detected and further MS/MS fragmentation was performed in each peak. Direct comparisons with conventional glass or fused silica emitters showed very similar performance with respect to signal strength and stability.