• 소성∙가공
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• 제11권7호
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• pp.601-607
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• 2002

Optically transparent materials such as fused silica, quartz and crystal have become important in the filed of optics and optoelectronics. Laser ablation continues to grow as an important technique for micromachining and surface modification of various materials, because many problems caused by direct contact between tools and workpiece can be avoided. Especially, laser ablation with excimer lasers enables fine micromachining of transparent materials such as fused silica, quartz and crystal, etc. In this study, laser-induced wet etching of fused silica in organic solution was conducted. KrF excimer laser was used as a light source and acetone solution of pyrene was used as etchant. Changing the number of laser pulses, micro holes of various depths are fabricated.

• Journal of the Optical Society of Korea
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• 제18권3호
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• pp.283-287
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• 2014

Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.150-150
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• 2008

본 연구에서는 Wet chemistry damage가 Nanopatterned p-ohmic electrode에 미치는 영향을 연구하였다. Nanopattern은 Metal clustering을 이용하여, P-GaN와 Ohmic형성에 유리한 Pd을 50$\AA$ 적층한 후 Rapid Thermal Annealing방법으로 $850^{\circ}C$, $N_2$분위기에서 3min열처리를 하여 Pd Clustering mask 를 제작하였다. Wet etching은 $85^{\circ}C$, $H_3PO_4$조건에서 시간에 따라 Sample을 Dipping하는 방법으로 시행하였다 Ohmic test를 위해서 Circular - Transmission line Model 방법을 이용하였으며, Atomic Force Microscopy과 Parameter Analyzer로 Nanopatterned GaN surface위에 형성된 Ni/ Au Contact에서의 전기적 분석과, 표면구조분석을 시행하였다. AFM결과 Wet처리시간에 따라서 Etching형상 및 Etch rate이 영향을 받는 것이 확인되었고, Ohmic test에서 Wet chemistry처리에 의한 Tunneling parameter와 Schottky Barrier Height가 크게 증/감함을 관찰하였다. 이러한 결과들은 Wet처리에 의해서 발생된 Defect가 GaN의 표면과 하부에서 발생되며, Deep acceptor trap 및 transfer거동과 밀접한 관련이 있음을 확인 할 수 있었다. 보다 자세한 Transport 및 Wet chemical처리영향에 관한 형성 Mechanism은 후에 I-V-T, I-V, C-V, AFM결과 들을 활용하여 발표할 예정이다.

• 한국염색가공학회지
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• 제22권2호
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• pp.123-131
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• 2010

Shape and size controlled synthesis of gold particles has been studied by using wet-chemical method. When ${AuCl_4}^-$ in aqueous $HAuCl_4$ precursor was reduced using $Na_2SO_3$ as a reducing agent, mixtures of spherical, triangular and hexagonal particles were prepared in a few minutes. It was found that the shape selective oxidative etching by ${AuCl_4}^-\;+\;Cl^-$ anions and crystal growth took place simultaneously. As the ${AuCl_4}^-$ and $Cl^-$ concentration increased, yields of large triangular and hexagonal plate type particles increased, while the spherical particles decreased in most cases. Possible etching and growth mechanisms are discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.668-675
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• 2013

We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp $H_2O_2$ (30%) and 3 vp $CH_3COOH$ (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of $Si_{0.8}Ge_{0.2}$ layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1250-1253
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• 1994

(100), (110) and (111) Si wafers are etched by isotropic etching method, anisotropic etching method using KOH etchant and EPW etchant and combined two-step etching method to compare the results. Isotopic etching method is effective in fabrication of wedge-shaped tips, especially (110) Si. Anisotropic etching method of (100) Si using EPW etchant can fabricate sharp cone-shaped tips and isotropic etching after anisotropic etching of (100) Si can fabricate wedge-shaped tips.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.863-866
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• 2008

For the cost reduction in the fabrication of display panels, a reverse moving system was equipped to a compacted in-line wet etch/cleaning system. For the effect of the alternating movement of substrate on the wet etch process, ITO layers were etched in various moving modes of substrates and the results were compared and analyzed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.281-281
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• 2007

• Restorative Dentistry and Endodontics
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• 제36권5호
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• pp.385-396
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• 2011

연구목적: 본 연구는 치근벽의 전처리 개념과 접착제의 중합방법이 레진계 근관충전제의 치근단 밀폐능에 미치는 영향을 평가하였다. 연구 재료 및 방법: 3가지 다른 접착변수를 조합하여 충전한 Resilon-RealSeal 시스템의 근단미세누출을 색소침투법을 이용하여 통상의 가타퍼쳐 충전과 비교하였다. 실험군은 자가부식형 RealSeal primer와 이중중합형 RealSeal sealer를 이용하여 Resilon 충전한 SEDC군, 산부식없이 Scotchbond Multi-Purpose primer를 적용한 후 접착제는 광중합하고 Resilon을 충전한 NELC군, 및 Scotchbond Multi-Purpose의 접착강화제와 접착제를 total etch/wet bonding과 광중합의 술식을 정확하게 지켜서 Resilon을 충전한 TELC군으로 구분하였다. 대조군(GPCS)에서는 통상의 AH26 plus sealer를 사용하여 가타퍼쳐를 충전 하였다. 결과: 치아장축방향의 색소침투는 TELC군에서 GPCS군과 SEDC군에 비해 유의하게 작았다(Kruskal-Wallis test, p < 0.05). 횡단면의 미세누출 점수도 TELC군이 근첨으로부터 2 - 5 mm의 범위에서 다른 군에 비해 유의하게 낮았다(Kruskal-Wallis test, p < 0.05). 결론: 레진계 근관충전제를 사용 시에는, 자가부식형 전처리제와 이중중합형 sealer보다는, total etch/wet bonding 개념과 적절한 광중합을 도모하는 전처리제 및 접착제의 사용이 치근단 미세누출을 감소시키므로 추천된다.

• Bulletin of the Korean Chemical Society
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• 제24권11호
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• pp.1613-1617
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• 2003

In the phosphoric acid based etchant, the dissolution rates of Mo films were measured by microgravimetry and the corrosion potentials of Mo and Al were estimated by Tafel plot method with various concentrations of nitric acid. Dissolution rate of Mo increased with the nitric acid concentration and reached a limiting value at high concentration of nitric acid in ambient condition. Corrosion potentials of Mo and Al shifted to positive direction and the difference between potentials of both metals was about 1,100 mV and 1,200 mV with 1% and above 4% of $HNO_3$, respectively. For a Mo/Al bilayers, the dissolution rate inversion is the main reason for good taper angle in shower etching process. Taper angles are observed by scanning electron microscope (SEM) after wet etching process for Mo/Al layered films with different concentrations of $HNO_3$. In the etch side profile, it was found that Al corroded faster than Mo below 4% of $HNO_3$ in dip etching process, however, Mo corroded faster above 4%. Trend for variation of taper angle of etched side of Mo/Al layered film can be explained by considering the effect corrosion rates of both metals with various concentrations of $HNO_3$.