• Advances in nano research
• /
• 제13권3호
• /
• pp.259-267
• /
• 2022

Two-dimensional (2D) transition metal carbides/nitrides or "MXenes" belong to a diverse-class of layered compounds, which offer composition- and electric-field-tunable electrical and physical properties. Although the majority of the MXenes, including Ti₃C₂T_x, are metallic, they typically show semiconductor-like behaviour in their percolated thin-film structure; this is also the most common structure used for fundamental studies and prototype device development of MXene. Magnetoconductance studies of thin-film MXenes are central to understanding their electronic transport properties and charge carrier dynamics, and also to evaluate their potential for spin-tronics and magnetoelectronics. Since MXenes are produced through solution processing, it is desirable to develop deposition strategies such as inkjet-printing to enable scale-up production with intricate structures/networks. Here, we systematically investigate the extrinsic negative magnetoconductance of inkjetprinted Ti₃C₂T_x MXene thin-films and report a crossover from weak anti-localization (WAL) to weak localization (WL) near 2.5K. The crossover from WAL to WL is consistent with strong, extrinsic, spin-orbit coupling, a key property for active control of spin currents in spin-orbitronic devices. From WAL/WL magnetoconductance analysis, we estimate that the printed MXene thin-film has a spin orbit coupling field of up to 0.84 T at 1.9 K. Our results and analyses offer a deeper understanding into microscopic charge carrier transport in Ti₃C₂T_x, revealing promising properties for printed, flexible, electronic and spinorbitronic device applications.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
• /
• pp.168-169
• /
• 2003

최근 세계적 주목을 받고 있는 spin FET 소자는 반도체에 주입된 spin 편향된 전자가 gate voltage(V$_{G}$)에 의해 반도체 계면에 유도된 전기장의 영향을 받아, Spin 세차운동을 하는 mechanism(Rashba 효과)이 근간을 이루고 있다. 작은 band gap을 가지는 반도체(narrow gap 반도체)는 작은 유효질량의 전자에 의해서 이러한 Rashba 효과를 크게 할 수 있어서, spin FET 구현을 위한 강력한 후보이며, 요즘 한창 연구되고 있는 주제이기도 하다. Rashba 효과가 저자기장 영역에서의 weak antilocalization효과로 나타남을 이용하여, 본 논문에서는 metal gate가 형성된 HgCdTe FET를 제작하여(FET1 시료, Fig. 1(a)참조), V$_{G}$에 따른 weak localization(WL) 및 weak antilocalization(WAL) 효과를 얻었다. 또한, Rashba 효과에 의한 spin 세차운동을 측정할 수 있는 소자(FET3 시료, Fig.1(b) 참조)를 제작하여 spin FET 구조에 대하여 연구하였다.