• Korean Journal of Materials Research
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• v.17 no.3
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• pp.125-131
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• 2007

[ $TiO_{2}-solution$ ] was aaded in $SiO_{2}-solution$ by various composition. $SiO_{2}-TiO_{2}$ thin films were obtained by the dip-coating method on the $SiO_{2}$ glass substrates, and then heat-treated at various temperature. Nano-size $TiO_{2}$ particles dispersed $SiO_{2}-TiO_{2}$ films showed absorption peak by quantum size effect at short wavelength region $350{\sim}400nm$, which made them good candidates for non-linear optical materials and photo-catalytic materials. The thickness of $SiO_{2}-TiO_{2}$ films were $300{\sim}430nm$. The contact angle of $SiO_{2}-TiO_{2}$ films for water was $5.3{\sim}47.9^{\circ}$, and therefore it is clear that $SiO_{2}-TiO_{2}$ films have super hydrophilic properties and the self-cleaning effects.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.417-421
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• 2008

$Al_2O_3$ sol with long-term stability was prepared by mechanical milling. Thin films were evaluated and created for use as coating materials. The particle size of the manufactured sol was 98 nm when 2 wt% of nitric acid was added. This indicates that the viscosity of the sol is 12 cps and that it has long-term stability. The thickness of the thin films, which varied from 100 nm to 500 nm, could be managed by adjusting the draw rate and the amount of an organic additive. A thin film heated to $500^{\circ}C$ indicated a hydrophilic property against water and excellent permeability against a visible ray.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.1
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• pp.116-122
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• 1988

Interfacial shear stresses have been determined for countercurrent stratified flow of air and water in a nearly-horizontal rectangular channel, based upon measurements of pressure drop, gas velocity profiles and mean film thickness. A dimensionless correlation for the interfacial friction factor has been developed as a function of the gas and liquid Reynolds numbers. Equivalent surface roughnesses for the interfacial friction factor have been calculated using the Nikuradse correlation and have been compared with the intensity of the wave height fluctuation on the interface. The results show that the interfacial shear stress is mainly affected by turbulent mixing near the interface due to the wave motion rather than by the roughened surface.

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.323-327
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• 1999

A water-soluble conducting polymer (CPP400 Paste) containing a derivative of polythiophene with several dopant was investigated as an anode material for organic electroluminescent devices. The device of ITO/CPP 400 Paste/TPD/$Alq_3$/Li:Al was fabricated, where CPP 400 Paste films were prepared by spin coating and TPD and $Alq_3$, films were prepared by vacuum evaporation. It was found that the turn-on voltage, current density, and luminance of the devices were dependent upon the thickness of CPP 400 Paste film in the Electroluminescent and current-voltage characteristics of the devices. This phenomena were explained by the energy level diagram of the device with the energy levels of the CPP400 Paste obtained by cyclic voltammetric method.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1109-1115
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• 2010

ZnO thin films were deposited on Si(100) substrates at low temperatures ($44^{\circ}C{\sim}210^{\circ}C$) by atomic layer deposition using DEZn (diethyl zinc) and water as precursors. The film thickness was measured by ellipsometry calibrated with cross-sectional TEM. The phase formation, microstructure evolution, UV-absorbance, and chemical composition changes were examined by XRD, SEM, AFM, TEM, UV-VIS-NIR, and AES, respectively. A uniform amorphous ZnO layer was formed even at $44^{\circ}C$ while stable crystallized ZnO films were deposited above $90^{\circ}C$. All the samples showed uniform surface roughness below 3 nm. Fully crystallized ZnO layers with a band-gap of 3.37 eV without carbon impurities can be formed at substrate temperatures of less than $90^{\circ}C$.

• Journal of the Korean Applied Science and Technology
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• v.37 no.6
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• pp.1507-1516
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• 2020

This study analyzed the scenario for road freezing section by applying the road freezing evaluation algorithm. To apply road freezing algorithm, the influencing factors on road freezing were reviewed. Observation data from four points, Mokgam IC, Jeongneung tunnel, Seongsan bridge, and Yeomchang bridge were used for analysis. All observatories are installed on the expressway, and they are classified for the analysis of road freezing characteristics. When the difference between the road surface temperature and dew-point temperature of the road freezing evaluation algorithm was 3℃ or less, the section where road freezing occurred was checked. In addition, road freezing evaluation was derived through the change of the road surface condition and water film thickness of the freezing section.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Horticultural Science & Technology
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• v.33 no.4
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• pp.511-517
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• 2015

This research was conducted to evaluate the influence of root restriction materials and media on the growth of runner plantlets of 'Seolhyang' strawberry in a nursery field. To achieve this, the influence of three kinds of root media on the growth of runner plantlets was monitored when polyethylene film was used as the root restriction material. In addition, the influence of various root restriction materials (RRS) such as transparent polyethylene film (PE), non-woven fabric (NF), perforated polyethylene film (PP), and root proofing sheet (RPS) on the changes in volumetric water content (VWC) and temperature of root media as well as growth of runner plantlet were investigated when expanded rice hull (ERH) was used as the root medium. In the comparison of root media, growth parameters such as leaf area and crown thickness at 20 d after fixation as well as crown thickness and fresh weights of root and above-ground tissue at 40 d after runner plantlet fixation were higher in the ERH treatment than in sandy loam and loamy sand. When the influence of RRS was compared, the VWC of ERH was 55% just after irrigation, but decreased to 26% at just before irrigation. Ranges of the VWC as influenced by irrigation cycle were 16 to 10% in the PP and less than 10% in the NF and RPS. The soil temperature in the PE treatment was around $1^{\circ}C$ lower than in NF, PP, and RPS. The differences between day and night temperatures were also smaller in the PE treatment rather than those in NF, PP, and RPS. The growths of runner plantlet 50 d after fixation showed that plant heights as well as fresh weights of root and above-ground tissue were higher in the PE treatment than in NF, PP, and RPS. NF and PP did not effectively restrict roots inside the medium and the roots of runner plantlets penetrated through the root restriction materials resulting in the formation of root system below the restriction materials. The above results indicate that ERH is more effective than sandy loam or loamy sand as root medium. PE rather than NF, PP, or RPS as root restriction material resulted in better growth of runner plantlets in propagation of 'Seolhyang' strawberry. The results of this research will be used for production of high quality runner plantlets in strawberry propagation.

• Membrane Journal
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• v.26 no.4
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• pp.281-290
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• 2016

Thin film composite (TFC) polyamide membranes were prepared on polysulfone (PSF) supports for forward osmosis (FO) applications. To understand the influence of polarity and porosity of support layer on the formation of polyamide structure and the final FO performance, clathochelate metal complex (MC) contained PSF supports were prepared via the phase inversion process from various PSF casting solutions containing 0.1-0.5 wt% of MC in dimethyl formamide (DMF) solvent (18 wt%). A crosslinked aromatic polyamide layer was then fabricated on top of each support to form a TFC membrane. For the porous PSF supports prepared with relatively low concentration casting solutions (12 wt%), the PET film was removed after phase inversion and crosslinked aromatic polyamide layer was then fabricated. The tested sample from PSF (18 wt%)/MC (0.5 wt%) casting solution presented outstanding FO performance, almost similar water flux (9.99 LMH) with lower reverse salt flux (RSF, 0.77 GMH) compared to commercial HTI FO membrane(10.97 LMH of flux and 2.2 GMH of RSF). By addition of MC in casting solution, the thickness of the active layer in FO membranes was reduced, however, the increased RSF value was obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.