• Macromolecular Research
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• v.12 no.1
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• pp.127-133
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• 2004

We have studied the surface micelle formation of polystyrene-b-poly(2-vinyl pyridine) (PS-b-P2VP) at the air-water interface. A series of four PS-b-P2VPs were synthesized by anionic polymerization, keeping the PS block length constant (28 kg/㏖) and varying the P2VP block length (1, 11, 28, or 59 kg/㏖). The surface pressure-area ($\pi$-A) isotherms were measured and the surface morphology was studied by atomic force microscopy (AFM) after Langmuir-Blodgett film deposition onto silicon wafers. At low surface pressure, the hydrophobic PS blocks aggregate to form pancake-like micelle cores and the hydrophilic P2VP block chains spread on the water surface to form a corona-like monolayer. The surface area occupied by a block copolymer is proportional to the molecular weight of the P2VP block and identical to the surface area occupied by a homo-P2VP. It indicates that the entire surface is covered by the P2VP monolayer and the PS micelle cores lie on the P2VP monolayer. As the surface pressure is increased, the $\pi$-A isotherm shows a transition region where the surface pressure does not change much with the film compression. In this transition region, which displays high compressibility, the P2VP blocks restructure from the monolayer and spread at the air-water interface. After the transition, the Langmuir film becomes much less compressible. In this high-surface-pressure regime, the PS cores cover practically the entire surface area, as observed by AFM and the limiting area of the film. All the diblock copolymers formed circular micelles, except for the block copolymer having a very short P2VP block (1 kg/㏖), which formed large, non-uniform PS aggregates. By mixing with the block copolymer having a longer P2VP block (11 kg/㏖), we observed rod-shaped micelles, which indicates that the morphology of the surfaces micelles can be controlled by adjusting the average composition of block copolymers.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.15-21
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• 1993

This paper describes the design and development of a KrF excimer laser stepper and discusses the detailed system parameters and characterization data obtained from the performance test. We have developed a deep UV step-and-repeat system, operating at 248 nm, by retrofitting a commercial modules such as KrF excimer laser, precision wafer stage and fused silica illumination and 5X projection optics of numerical aperture 0.42. What we have developed, to the basic structure, are wafer alignment optics, reticle alignment system, autofocusing/leveling mechanisms and environment chamber. Finally, all these subsystem were integrated under the control of microprocessor-based controllers and computer. The wafer alignment system comprises the OFF-AXIS and the TTL alignment. The OFF-AXIS alignment system was realized with two kinds of optics. One is the magnification system with the image processing technique and the other is He-Ne laser diffraction type system using the alignment grating on the wafer. 'The TTL alignment system employs a dual beam inteferometric method, which takes advantages of higher diffraction efficiency compared with other TTL type alignment systems. As the results, alignment accuracy for OFF-AXIS and TTL alignment system were obtained within 0.1 $\mu\textrm{m}$/ 3 $\sigma$ for the various substrate on the wafers. The wafer focusing and leveling system is modified version of the conventional systems using position sensitive detectors (PSD). This type of detection method showed focusing and leveling accuracies of about $\pm$ 0.1 $\mu\textrm{m}$ and $\pm$ 0.5 arcsec, respectively. From the CD measurement, we obtained 0.4 $\mu\textrm{m}$ resolution features over the full field with routine use, and 0.3 $\mu\textrm{m}$ resolution was attainable under more strict conditions.

• Journal of Adhesion and Interface
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• v.11 no.3
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• pp.120-125
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• 2010

UV-curable acrylic Pressure-sensitive adhesives (Acrylic PSAs) are used in many different parts in the world. A wafer manufacture process which is based on semiconductor industry is one thing. We have used acrylic PSAs whose thickness is different from $20{\mu}m$ to $30{\mu}m$ in wafer manufacture process so far. But as wafers become more thinner, acrylic PSAs are supposed to satisfy the requirements such as proper adhesion performance. The main purpose of this research is studying proper adhesion performance and UV-curing behavior of UV-curable acrylic PSAs with very thin thickness and then determining optimized conditions to raise the efficiency of thin wafer production. Acrylic PSAs contain 2-Ethylhexyl Acrylate (2-EHA), Acrylic Acid (AA) and Butyl Acrylate (BA). Ethyl acetate (EtAc) is used as solvent. The acrylic PSAs are obtained using solvent polymerization. Thickness of UV-curable acrylic PSAs is different from $10{\sim}30{\mu}m$. By peel strength and probe tack, adhesion performance and UV curing behavior of acrylic PSA are concerned.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.114-120
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• 2010

Conventional surface texturing in crystalline silicon solar cell have been use wet texturing by Alkali or Acid solution. But conventional wet texturing has the serious issue of wafer breakage by large consumption of wafer in wet solution and can not obtain the reflectance below 10% in multi crystalline silicon. Therefore it is focusing on RIE texturing, one method of dry etching. We developed large scale plasma RIE (Reactive Ion Etching) equipment which can accommodate 144 wafers (125 mm) in tray in order to provide surface texturing on the silicon wafer surface. Reflectance was controllable from 3% to 20% in crystalline silicon depending on the texture shape and height. We have achieved excellent reflectance below 4% on the weighted average (300~1,100 nm) in multi crystalline silicon using plasma texturing with gas mixture ratio such as $SF_6$, $Cl_2$, and $O_2$. The texture shape and height on the silicon wafer surface have an effect on gas chemistry, etching time, RF frequency, and so on. Excellent conversion efficiency of 16.1% is obtained in multi crystalline silicon by RIE process. In order to know the influence of RF frequency with 2 MHz and 13.56 MHz, texturing shape and conversion efficiency are compared and discussed mutually using RIE technology.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.365-373
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• 2008

We have succeeded in synthesizing vertically aligned thin multi-walled carbon nanotubes (VA thin-MWCNTs) by a catalytic chemical vapor deposition (CCVD) method onto Fe/Al thin film deposited on a Si wafers using an optimum amount of hydrogen sulfide ($H_2S$) additive. Scanning electron microscope (SEM) images revealed that the as-synthesized CNT arrays were vertically well-oriented perpendicular to the substrate with relatively uniform length. Transmission electron microscope (TEM) observations indicated that the as-grown CNTs were nearly catalyst-free thin-MWCNTs with small outer diameters of less than 10nm. The average wall number is about 5. We suggested a possible growth mechanism of the VA thin-MWCNT arrays. The VA thin-MWCNTs showed a low turn-on electric field of about $1.1\;V/{\mu}m$ at a current density of $0.1\;{\mu}A/cm^2$ and a high emission current density about $2.5\;mA/cm^2$ at a bias field of $2.7\;V/{\mu}m$. Moreover, the VA thin-MWCNTs presented better field emission stability without degradation over 20 hours (h) at the emission current density of about $1\;mA/cm^2$.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.215-220
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• 2001

Amorphous Ti-Si-N films of approximately 200 and 650 thickness were reactively sputtered on Si wafers using a dc magnetron sputtering system at various $N_2$/Ar flow ratios. Their barrier properties between Cu (750 ) and Si were investigated by using sheet resistance measurements, XRD, SEM, RBS, and AES depth profiling focused on the effect of the nitrogen content in Ti-Si-N thin film on the Ti-Si-N barrier properties. As the nitrogen content increases, first the failure temperature tends to increase up to 46 % and then decrease. Barrier failure seems to occur by the diffusion of Cu into the Si substrate to form Cu$_3$Si, since no other X- ray diffraction intensity peak (for example, that for titanium silicide) than Cu and Cu$_3$Si Peaks appears up to 80$0^{\circ}C$. The optimal composition of Ti-Si-N in this study is $Ti_{29}$Si$_{25}$N$_{46}$. The failure temperatures of the $Ti_{29}$Si$_{25}$N$_{465}$ barrier layers 200 and 650 thick are 650 and $700^{\circ}C$, respectively.ely.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.890-897
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• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• Journal of the Korean Society of Safety
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• v.31 no.3
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• pp.42-46
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• 2016

In LCD Display or semiconductor manufacturing processes, the anti-static technology of glass substrates and wafers becomes one of the most difficult issues which influence the yield of the semiconductor manufacturing. In order to overcome the problems of wafer surface contamination various issues such as ionization in decompressed vacuum and inactive gas(i.e. $N_2$ gas, Ar gas, etc.) environment should be considered. Soft X ray radiation is adequate in air and $O_2$ gas at atmospheric pressure while UV radiation is effective in $N_2$ gas Ar gas and at reduced pressure. At this point of view, the "vacuum ultraviolet ray ionization" is one of the most suitable methods for static elimination. The vacuum ultraviolet can be categorized according to a short wavelength whose value is from 100nm to 200nm. this is also called as an Extreme Ultraviolet. Most of these vacuum ultraviolet is absorbed in various substances including the air in the atmosphere. It is absorbed substances become to transit or expose the electrons, then the ionization is initially activated. In this study, static eliminator based on the vacuum ultraviolet ray under the above mentioned environment was tested and the results show how the ionization performance based on vacuum ultraviolet ray can be optimized. These vacuum ultraviolet ray performs better in extreme atmosphere than an ordinary atmospheric environment. Neutralization capability, therefore, shows its maximum value at $10^{-1}{\sim}10^{-3}$ Torr pressure level, and than starts degrading as pressure is gradually reduced. Neutralization capability at this peak point is higher than that at reduced pressure about $10^4$ times on the atmospheric pressure and by about $10^3$ times on the inactive gas. The introductions of these technology make it possible to perfectly overcome problems caused by static electricity and to manufacture ULSI devices and LCD with high reliability.

• Journal of Conservation Science
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• v.7 no.2
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• pp.60-67
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• 1998

The effects of moisture content (MC) and diffusion period on the diffusion of boron from borate rod through Pinus densiflora and P. koraiensis were investigated as a preliminary research of integrated remedial treatment for heritage wooden structures using borate rod. After equilibrating MCs of samples (15, 25, and 40%), borate rod (1,000 mg) was inserted into the sample, and stored for diffusion of boron at room temperatures ($23^{\circ}C$) for 2, 4, 8, and 12 weeks. Wafers were serially cut at constant intervals from rod treatment point and the boron penetration through longitudinal and transverse direction was measured by staining with boron indicator. For boron diffusion, MC above fiber saturation point was needed, and the diffusion rates increased with time. The fastest rates of diffusion were observed in longitudinal direction, followed by the radial and then the tangential direction. The rates of diffusion in all directions were the fastest in P. koraiensis. In P. densiflora, the diffusion rates through heartwood was faster than that in sapwood in longitudinal direction and vice versa in transverse direction. Based on the best result of this study, optimal space between rod insertion points could be recommended as follows; approximately 120 mm for P. koraiensis and heartwood of P. densiflora, 60 mm for sapwood of P. densiflora in longitudinal direction, and approximately 30 mm for all species tested in transverse direction. However, the effect of rod size and long-term exposure for diffusion on boron movement should be fully investigated for the accurate evaluation of optimal space between rod holes.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.101-108
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• 1996

The silicon $p^{+}-n$ junction diodes were fabricated. The fabricated wafers were treated by single or double annealing steps. Single annealing process was performed by diffusion of either Au or Pt into the wafer under the oxygen or nitrogen ambient at $800{\sim}1010^{\circ}C$. Second annealing step involved additional annealing of the single annealed wafer under the oxygen ambient at $800{\sim}1010^{\circ}C$ for one hour. Electrical characteristics of the diodes were investigated to evaluate the effect of the annealing treatments. In the case of single annealing under nitrogen ambient at $1010^{\circ}C$ for one hour, the amount of leakage current of Pt diffused diode was 75 times larger than that of Au diffused one. The optimum processing condition to achieve high speed silicon $p^{+}-n$ junction diodes from this study was obtained when Pt diffused wafer(treated under the nitrogen ambient at $1010^{\circ}C$ for one hour) was secondly annealed in an oxygen ambient at $800^{\circ}C$ for one hour. The resulting leakage current of two step annealed diodes were remarkably reduced to 1/1100 of the single annealed one. The diode characteristics such as recovery time, breakdown voltage, leakage current, and forward voltage were 4ns, 138V, 1.72nA, and 1V, respectively.