• Title/Summary/Keyword: wafer-level packaging

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Wafer Level Packaging of RF-MEMS Devices with Vertical feed-through (Ultra Thin 실리콘 웨이퍼를 이용한 RF-MEMS 소자의 웨이퍼 레벨 패키징)

  • 김용국;박윤권;김재경;주병권
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1237-1241
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    • 2003
  • In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes lot vortical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 〔㏈〕 and a insertion loss of -0.04∼-0.08 〔㏈〕. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.

Thermocompression bonding for wafer level hermetic packaging of RF-MEMS devices (RF-MEMS 소자의 웨이퍼 레벨 밀봉 패키징을 위한 열압축 본딩)

  • Park, Gil-Soo;Seo, Sang-Won;Choi, Woo-Beom;Kim, Jin-Sang;Nahm, Sahn;Lee, Jong-Heun;Ju, Byeong-Kwon
    • Journal of Sensor Science and Technology
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    • v.15 no.1
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    • pp.58-64
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    • 2006
  • In this study, we describe a low-temperature wafer-level thermocompression bonding using electroplated gold seal line and bonding pads by electroplating method for RF-MEMS devices. Silicon wafers, electroplated with gold (Au), were completely bonded at $320^{\circ}C$ for 30 min at a pressure of 2.5 MPa. The through-hole interconnection between the packaged devices and external terminal did not need metal filling process and was made by gold films deposited on the sidewall of the throughhole. This process was low-cost and short in duration. Helium leak rate, which is measured to evaluate the reliability of bonded wafers, was $2.7{\pm}0.614{\times}10^{-10}Pam^{3}/s$. The insertion loss of the CPW packaged was $-0.069{\sim}-0.085\;dB$. The difference of the insertion loss between the unpackaged and packaged CPW was less than -0.03. These values show very good RF characteristics of the packaging. Therefore, gold thermocompression bonding can be applied to high quality hermetic wafer level packaging of RF-MEMS devices.

State of The Art in Semiconductor Package for Mobile Devices

  • Kim, Jin Young;Lee, Seung Jae
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.2
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    • pp.23-34
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    • 2013
  • Over the past several decades in the microelectronics industry, devices have gotten smaller, thinner, and lighter, without any accompanying degradation in quality, performance, and reliability. One permanent and deniable trend in packaging as well as wafer fabrication industry is system integration. The proliferating options for system integration, recently, are driving change across the overall semiconductor industry, requiring more investment in developing, ramping and supporting new die-, wafer- and board-level solution. The trend toward 3D system integration and miniaturization in a small form factor has accelerated even more with the introduction of smartphones and tablets. In this paper, the key issues and state of the art for system integration in the packaging process are introduced, especially, focusing on ease transition to next generation packaging technologies like through silicon via (TSV), 3D wafer-level fan-out (WLFO), and chip-on-chip interconnection. In addition, effective solutions like fine pitch copper pillar and MEMS packaing of both advanced and legacy products are described with several examples.

A Novel Chip Scale Package Structure for High-Speed systems (고속시스템을 위한 새로운 단일칩 패키지 구조)

  • 권기영;김진호;김성중;권오경
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2001.11a
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    • pp.119-123
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    • 2001
  • In this paper, a new structure and fabrication method for the wafer level package(WLP) is presented. A packaged VLSI chip is encapsulated by a parylene(which is a low k material) layer as a dielectric layer and is molded by SUB photo-epoxy with dielectric constant of 3.0 at 100 MHz. The electrical parameters (R, L, C) of package traces are extracted by using the Maxwell 3-D simulator. Based on HSPICE simulation results, the proposed wafer level package can operate for frequencies up to 20GHz.

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Design and Strength Evaluation of an Anodically Bonded Pressurized Cavity Array for Wafer-Level MEMS Packaging (기판단위 밀봉 패키징을 위한 내압 동공열의 설계 및 강도 평가)

  • Gang, Tae-Gu;Jo, Yeong-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.25 no.1
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    • pp.11-15
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    • 2001
  • We present the design and strength evaluation of an anodically bonded pressurized cavity array, based on the energy release rate measured from the anodically bonded plates of two dissimilar materials. From a theoretical analysis, a simple fracture mechanics model of the pressurized cavity array has been developed. The energy release rate (ERR) of the bonded cavity with an infinite bonding length has been derived in terms of cavity pressure, cavity size, bonding length, plate size and material properties. The ERR with a finite bonding length has been evaluated from the finite element analysis performed for varying cavity and plate sizes. It is found that, for an inter-cavity bonding length greater than the half of the cavity length, the bonding strength of cavity array approaches to that of the infinite plate. For a shorter bonding length, however, the bonding strength of the cavity array is monotonically decreased with the ratio of the bonding length to the cavity length. The critical ERR of 6.21J/㎡ has been measured from anodically bonded silicon-glass plates. A set of critical pressure curves has been generated for varying cavity array sizes, and a design method of the pressurized cavity array has been developed for the failure-free wafer-level packaging of MEMS devices.

MEMS Packaging Technology and Micro Sensors (MEMS Packaging 기술 및 마이크로센서)

  • 최상언
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.09a
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    • pp.55-85
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    • 2000
  • MEMS(Micro Electro Mechanical System) technology. MEMS Inertial Sensors promise a new wide market for many areas -Challenge. significant cost reduction by wafer level packaging and testing. decreasing of power consumption by miniaturization. enhancing of performance and reliability. on-chip integration for multiplicity. MEMS is newly emerging technology.

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