• IE interfaces
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• v.10 no.1
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• pp.1-13
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• 1997

반도체 Wafer Fabrication 공정은 무수한 공정과 복잡한 Lot의 흐름 등으로 다른 제조 형태에 비해 효율적인 관리가 대단히 어려운 부문이다. 본 연구는 반도체 Fab을 대상으로 주어진 생산 소요량과 목표 공기를 효율적으로 달성하기 위한 Shift 단위의 생산 일정계획을 대상으로 하였다. 특히, 전 공정 및 장비를 고려하기보다는 Bottleneck인 Photo 공정의 Stepper를 중심으로, 공정을 Layer단위로 묶어, 한 Shift에서 어떻게 Stepper를 할당하고 생산계획을 할 것인가를 결정하기 위한 2단계 방법론을 제시하고, Stepper 할당 및 계획에 필요한 3가지 알고리즘들을 제시하였다. 이 기법들을 소규모의 예제들에 대해 적용한 결과와 최적해와의 비교를 통하여 그 성능을 평가하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.7
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• pp.69-75
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• 1994

A very fine pattern formation process using double exposure is investigated, which can overcome the resolution limit of optical wafer stepper. The very fine pattern can be obtained by moving the edge profile of large pattern by means of moving the stepper stage. The simulation results show that the light transmittance decrease bellow 9%, and the contrast increase to 16.6% for the 0.3$\mu$m photoresist pattern exposeed by the double exposure using i-line wafer stepper. And the experimental results show that fine photoresist pattern as short as 0.2$\mu$m can be obtained without a loss of photoresist thickness. Also, it proves that the depth of focus for 0.3$\mu$m pattern is longer than $1.5\mu$m. And, the very fine negative photoresist pattern was formmed by using the double exposure technique and the image reversal process.

• Journal of the Korean Society for Precision Engineering
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• v.11 no.1
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• pp.150-156
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• 1994

To meet the process requirement of semiconductor device manufacturing, it is necessary to improve the alignment accuracy in exposure equipments. We developed the excimer laser stepper and will describe the methodology for alignment measurement and experimental results. Our wafer alignment system consists of off-axis optics, TTL(Through The Lens) optics and high precision stage. Off-axis alignment utilizes the image processing and /or diffraction from thealign marks of off-centered chip area. On the other hand, TTL alignment can be used for the die-by-die alignment using dual beam interferometry. When only off-axis alignment was used, the experimental alignment error(lml+3 .sigma. ) was 0.26-0.29 .mu. m, and will be reduced down to 0.15 .mu. m by adding TTL alignment.

• Journal of Advanced Navigation Technology
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• v.13 no.3
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• pp.412-418
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• 2009

This study aims to develop a system that enables 20 to 25 wafers to be automatically aligned at the position of the corresponding serial number and facilitates the checkout of wafer processing by sensing them before and after semiconductor processing. It also suggests compensation algorithm and stepper motor control algorithm that carefully align notches. This study minimizes the rate of occurrence by adopting materials of which the surface has proper coefficient of friction when wafers are rotating and that do not rarely produce particles. This study completed the development of a slip resistance apparatus and carried out performance tests through mathematical verification. This system is expected to improve semiconductor yield due to anti-pollution technology in semiconductor processing and can be selectively applied to a large size wafer over 450mm in the future.

• Korean Journal of Optics and Photonics
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• v.4 no.2
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• pp.157-161
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• 1993

An optical autofocus system for a DUV KrF excimer laser wafer stepper was developed by using the PSD (Position Sensitive Detector) as the position sensor. The laser beam was incident on the surface of wafer and the reflected beam was magnified optically by a lens. And the beam was directed onto the surface of PSD by a mirror system. The spatial resolution of the autofocus system was found to be $0.03{\mu}m$.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2001.10a
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• pp.298-301
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• 2001

In semiconductor manufacturing, wafer fabrication is the most complicated and important process, which is composed of several hundreds of process steps and several hundreds of machines involved. The productivity of the manufacturing mainly depends on how well they control balance of WIP flow to achieve maximal throughput under short manufacturing cycle time. In this paper mathematical formulation is suggested for the stepper scheduling, in which cycle time reduction and maximal production is achieved.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1995.10a
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• pp.437-441
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• 1995

In this paper, the ultra precision positioning system for servo motor and piezo actuator using dual servo loop control has been developed. For positioning system having long distance with ultra precision, the combination of global stage and micro stage is required. Servo moter and ball screw are used as a master stage and piezo acuator as a fine stage. By using this system, an positional precision witin .+-. 30nm has been achieved at dual servo loop control. When using micro stage, an positional precision within .+-. 10nm has been achieved. This result can be applied to develop semiconductor equipment such as wafer stepper.

• Proceedings of the KIEE Conference
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• 2000.11b
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• pp.274-276
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• 2000

Recently, the demands of the ultra-precision stage system, such as wafer stepper stages for photolithography, are increasing in the field of manufacturing and test equipment. Since the mechanical elements which convert rotational motion into translational introduce backlash and elasticity in the system, better performance of the drive could be achieved by the linear BLDC motor with appropriate servo control. The analytical design and the FEM analysis about linear BLDC motor is described in this paper. The performance of the servo-drive system will be evaluated through the comparison of results between the designed data and the measured data in the future.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.15-21
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• 1993

This paper describes the design and development of a KrF excimer laser stepper and discusses the detailed system parameters and characterization data obtained from the performance test. We have developed a deep UV step-and-repeat system, operating at 248 nm, by retrofitting a commercial modules such as KrF excimer laser, precision wafer stage and fused silica illumination and 5X projection optics of numerical aperture 0.42. What we have developed, to the basic structure, are wafer alignment optics, reticle alignment system, autofocusing/leveling mechanisms and environment chamber. Finally, all these subsystem were integrated under the control of microprocessor-based controllers and computer. The wafer alignment system comprises the OFF-AXIS and the TTL alignment. The OFF-AXIS alignment system was realized with two kinds of optics. One is the magnification system with the image processing technique and the other is He-Ne laser diffraction type system using the alignment grating on the wafer. 'The TTL alignment system employs a dual beam inteferometric method, which takes advantages of higher diffraction efficiency compared with other TTL type alignment systems. As the results, alignment accuracy for OFF-AXIS and TTL alignment system were obtained within 0.1 $\mu\textrm{m}$/ 3 $\sigma$ for the various substrate on the wafers. The wafer focusing and leveling system is modified version of the conventional systems using position sensitive detectors (PSD). This type of detection method showed focusing and leveling accuracies of about $\pm$ 0.1 $\mu\textrm{m}$ and $\pm$ 0.5 arcsec, respectively. From the CD measurement, we obtained 0.4 $\mu\textrm{m}$ resolution features over the full field with routine use, and 0.3 $\mu\textrm{m}$ resolution was attainable under more strict conditions.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.