• Title/Summary/Keyword: wafer drilling

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Thrust Bearing Design for High-Speed Composite Air Spindles (고속 복합재료 공기 주축부를 위한 추력베어링 설계)

  • Bang, Kyung-Geun;Lee, Dai-Gil
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.10
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    • pp.1997-2007
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    • 2002
  • Composite air spindles are appropriate for the high-speed and the high-precision machining as small hole drilling of printed circuit board (PCB) or wafer cutting for manufacturing semiconductors because of the low rotational inertia, the high damping ratio and the high fundamental natural frequency of composite shaft. The axial load and stiffness of composite air spindles fur drilling operation are determined by the thrust ben ring composed of the air supply part mounted on the housing and the rotating part mounted on the rotating shaft. At high-speed rotation, the rotating part of the thrust bearing should be designed considering the stresses induced by centrifugal force as well as the axial stiffness and the natural frequency of the rotating shaft to void the shaft from failure due to the centrifugal force and resonant vibration. In this work, the air supply part of the thrust bearing was designed considering the bending stiffness of the bearing and the applied load. The rotating part of the thrust bearing was designed through finite element analysis considering the cutting forces during manufacturing as well as the static and dynamic characteristics under both the axial and con trifugal forces during high-speed rotation.

High -Rate Laser Ablation For Through-Wafer Via Holes in SiC Substrates and GaN/AlN/SiC Templates

  • Kim, S.;Bang, B.S.;Ren, F.;d'Entremont, J.;Blumenfeld, W.;Cordock, T.;Pearton, S.J.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.3
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    • pp.217-221
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    • 2004
  • [ $CO_2$ ]laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 ${\mu}m.min^{-1}$ were obtained for pulse energies of 7.5-30 mJ over diameters of 50·500 ${\mu}m$ with a Q-switched pulse width of ${\sim}30$ nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 ${\mu}m/min$) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/AlN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate subsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching.

A Trapping Behavior of GaN on Diamond HEMTs for Next Generation 5G Base Station and SSPA Radar Application

  • Lee, Won Sang;Kim, John;Lee, Kyung-Won;Jin, Hyung-Suk;Kim, Sang-Keun;Kang, Youn-Duk;Na, Hyung-Gi
    • International Journal of Internet, Broadcasting and Communication
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    • v.12 no.2
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    • pp.30-36
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    • 2020
  • We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

Laser Processing Technology in Semiconductor and Display Industry (반도체 및 디스플레이 산업에서의 레이저 가공 기술)

  • Cho, Kwang-Woo;Park, Hong-Jin
    • Journal of the Korean Society for Precision Engineering
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    • v.27 no.6
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    • pp.32-38
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    • 2010
  • Laser material processing technology is adopted in several industry as alternative process which could overcome weakness and problems of present adopted process, especially semiconductor and display industry. In semiconductor industry, laser photo lithography is doing at front-end level, and cutting, drilling, and marking technology for both wafer and EMC mold package is adopted. Laser cleaning and de-flashing are new rising technology. There are 3 kinds of main display industry which use laser technology - TFT LCD, AMOLED, Touch screen. Laser glass cutting, laser marking, laser direct patterning, laser annealing, laser repairing, laser frit sealing are major application in display industry.