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Low-k plasma polymerized methyl-cyclohexane thin films deposited by inductively coupled plasma chemical vapor deposition

  • 조현욱;권영춘;양재영;정동근
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.98-98
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    • 2000
  • 초고집적(ULSI) 반도체 소자의 multilevel metalization을 위한 중간 유저네로서 저 유전상수(k<)와 높은 열적안정성(>45$0^{\circ}C$)을 갖는 새로운 물질을 도입하는 것이 필요하다. 중합체 박막은 낮은 유전상수와 높은 열적 안정성으로 인하여 low-k 물질로 적당하다고 여겨진다. PECVD에 의한 plasma polymer 박막의 증착은 많이 보고되어 왔으마 고밀도 플라즈마 형성이 가능하고 기판으로 유입되는 ion의 energy 조절이 가능한 inductively coupled plasma(ICP) CVD에 의한 plasma polymer 박막에 대한 연구는 보고된 바 없다. 본 연구에서는 Mtehyl-cyclohexane precusor를 사용하여 substrate에 bias를 주면서 inductively coupled plasma(ICP)를 이용하여 플라즈마 폴리머 박막(plasma polymerized methyl-cyclohexane : 이하^g , pp MCH라 칭함)을 증착하였으며 ICP power와 substrate bias(SB) power가 증착된 박막의 특성에 어떠한 영향을 미치는지 알아보았다. 증착된 박막의 유전상 수 및 열적 안정성은 ICP power의 변화에 비해 SB power의 변화에 더 크게 영향을 받았다.^g , pp MCH 박막은 platinum(Pt) 기판과 silicon 기판위에서 같이 증착되었다. Methyl-cyclohexane precursor는 4$0^{\circ}C$로 유지된 bubbler에 담겨지고 carrier 가스 (H2:10%, He:90%)에 의해 reactor 내부로 유입된다.^g , pp MCH 박막은 증착압력 350 mTorr, 증착온도 6$0^{\circ}C$에서 \circled1SB power를 10W에 고정시키고 ICP power를 5W부터 70W까지, \circled2ICP power를 10W에 고정시키고 SB power를 5W부터 70W까지 변화하면서 증착하였다. 유전 상수 및 절연성은 Al/PPMCH//Pt 구조의 capacitor를 만들어서 측정하였으며, 열적 안정성은 Ar 분위기에서 30분간의 열처리 전후의 두께 변화를 측정함으로써 분석하였다. SB power 10W에서 ICP power가 5W에서 70w로 증가함에 따라 유전상수는 2.65에서 3.14로 증가하였다. 열적 안정성은 ICP power의 증가에 따라서는 크게 향상되지 않은 것으로 나타났다. ICP power 10W에서 SB power가 5W에서 70W로 증가함에 따라 유전상수는 2.63에서 3.46으로 증가하였다. 열적 안정성은 SB power의 증가에 따라 현저하게 향상되었으며 30W 이상에서 증착된 박막은 45$0^{\circ}C$까지 안정하였고, 70W에서 증착된 박막은 50$0^{\circ}C$까지 안정하였다. 열적 안정성은 ICP power의 증가에 따라서는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.

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Dietary carnosic acid suppresses hepatic steatosis formation via regulation of hepatic fatty acid metabolism in high-fat diet-fed mice

  • Park, Mi-Young;Mun, Seong Taek
    • Nutrition Research and Practice
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    • v.7 no.4
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    • pp.294-301
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    • 2013
  • In this study, we examined the hepatic anti-steatosis activity of carnosic acid (CA), a phenolic compound of rosemary (Rosmarinus officinalis) leaves, as well as its possible mechanism of action, in a high-fat diet (HFD)-fed mice model. Mice were fed a HFD, or a HFD supplemented with 0.01% (w/w) CA or 0.02% (w/w) CA, for a period of 12 weeks, after which changes in body weight, blood lipid profiles, and fatty acid mechanism markers were evaluated. The 0.02% (w/w) CA diet resulted in a marked decline in steatosis grade, as well as in homeostasis model assessment of insulin resistance (HOMA-IR) index values, intraperitoneal glucose tolerance test (IGTT) results, body weight gain, liver weight, and blood lipid levels (P < 0.05). The expression level of hepatic lipogenic genes, such as sterol regulating element binding protein-1c (SREBP-1c), liver-fatty acid binding protein (L-FABP), stearoyl-CoA desaturase 1 (SCD1), and fatty acid synthase (FAS), was significantly lower in mice fed 0.01% (w/w) CA and 0.02% (w/w) CA diets than that in the HFD group; on the other hand, the expression level of ${\beta}$-oxidation-related genes, such as peroxisome proliferator-activated receptor ${\alpha}$ (PPAR-${\alpha}$), carnitine palmitoyltransferase 1 (CPT-1), and acyl-CoA oxidase (ACO), was higher in mice fed a 0.02% (w/w) CA diet, than that in the HFD group (P < 0.05). In addition, the hepatic content of palmitic acid (C16:0), palmitoleic acid (C16:1), and oleic acid (C18:1) was significantly lower in mice fed the 0.02% (w/w) CA diet than that in the HFD group (P < 0.05). These results suggest that orally administered CA suppressed HFD-induced hepatic steatosis and fatty liver-related metabolic disorders through decrease of de novo lipogenesis and fatty acid elongation and increase of fatty acid ${\beta}$-oxidation in mice.

Interaction Between the Viscous and Wavemaking Component Resistance (점성저항과 조파 저항 성분의 상호작용)

  • Kim, In-Chull
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.19 no.2
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    • pp.125-129
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    • 1983
  • It is customary to assume that the resistance of a jull at uniform speed may be regarded as the sum of viscous and wavemaking component resistance, or C sub(i)=C sub(v)+C sub(w), where C sub(v) is regarded as a function of Reynolds Number R and C sub(w) a function of Froude Number F. Formulae have been obtained for ∂C sub(w)/∂R, ∂C sub(v)/∂F which may be relevant in seeking theoretical grounds for possible interaction between viscous and wavemaking component resistances. The values of ∂C sub(w)/∂R are small. In general they are smaller than corresponding values of ∂C sub(v)/∂R. But although these values are small it does not follow that they are entirely negligible. The Froude assumption that the rate of change of C sub(w) with R is zero must bel regarded as incorrect.

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Thermal characteristics of $W_{67}N_{33}$/GaAs structure (PECVD방법으로 형성한 $W_{67}N_{33}$/GaAs구조의 열적 특성)

  • Lee, Se-Jeong;Hong, Jong-Seong;Lee, Chang-U;Lee, Jong-Mu;Kim, Yong-Tae;Min, Seok-Gi
    • Korean Journal of Materials Research
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    • v.3 no.5
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    • pp.443-450
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    • 1993
  • Self-alignment gatc Schottky contact structure on Si- implanted GaAs was formed by plasma enhanced chemical vapor dcposirion. Tungsten nitride thin films (ahclut 1600$\AA$) \vcre dopositcd on GaAs at $350^{\circ}C$ in order to fahricarc GaAs 1Cs and ttwn rapidly annealed at $750^{\circ}C$ to $900^{\circ}C$. Thermal charac tcristics of PECVD)-$W_{67}N_{43}$/GaAs structure were investigated by X-ray diffraction, photolumintesccnce. and optical deep level transient specrroscopy. Results revealed that $W_{67}N_{33}$ gate was more thermally sta ble with GaAs substrate than W gate and Si atoms implanted In $W_{67}N_{33}$/GaAs structure became morr active than those In W/GaAs after annealing. I-V characteristics of $W_{67}N_{33}$/GaAs diod c exhibired a nearly ideal diode behavior. The termal stability of $W_{67}N_{33}$/GaAs diode was better than that of W/GaAs diode with the post annealing at temperatures from 800 to $900^{\circ}C$ for 20s without As overpressure.

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W3C 표준화 동향

  • Lee, Won-Seok;Lee, Gang-Chan;Lee, Seung-Yun
    • Information and Communications Magazine
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    • v.33 no.9
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    • pp.59-63
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    • 2016
  • W3C는 웹에 대한 국제표준을 개발하는 표준화 기구로 HTML5 표준을 포함하여 CSS, XML, OWL 등 웹 생태계에 필요한 핵심적인 표준을 개발해 왔으며, 최근에는 웹 페이먼트, 사물웹, 오토모티브 웹에 대한 표준을 개발하는 하고 있다. 본 고에서는 표준화 기구인 W3C에 대한 간단한 소개와 함께 최근에 주요하게 개발되고 있는 표준을 중심으로 W3C 표준화 동향에 대해서 알아본다.

Analysis of the Shielded Coplanar Waveguide by Using the Variational Method (변분법을 이용한 차폐된 코플래너 도파관 해석)

  • 황정섭;이상설
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.12
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    • pp.36-42
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    • 1993
  • By the variational method, the coplanar waveguide(C.P.W) shielded by two conducting plates has been analyzed. The particular potential solution has been obtained for the boundary conditions in C.P.W. The characteristic impedance and the effective dielectric constant in C.P.W. have been obtained by the variational method using the potential function and the assumed basis function for charge distributions. To consider the effect of the conducting plate in C.P.W. two cases, with and without the top plate, have been analyzed and compared respectively.

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Cooling Performance of Horizontal Type Geothermal Heat Pump System for Protected Horticulture (시설원예를 위한 수평형 지열 히트펌프의 냉방성능 해석)

  • Ryou, Young-Sun;Kang, Youn-Ku;Kang, Geum-Chun;Kim, Young-Joong;Paek, Yee
    • Journal of Bio-Environment Control
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    • v.17 no.2
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    • pp.90-95
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    • 2008
  • It has become a big matter of concerns that the skill and measures against reduction of energy and cost for heating a protected horticultural greenhouse were prepared. But in these days necessity of cooling a protected horticultural greenhouse is on the rise from partial high value added farm products. In this study, therefore, a horizontal type geothermal heat pump system with 10 RT scale to heat and cool a protected horticultural greenhouse and be considered to be cheaper than a vertical type geothermal heat pump system was installed in greenhouse with area of $240\;m^2$. And cooling performances of this system were analysed. As condenser outlet temperature of heat transfer medium fluid rose from $40^{\circ}C$ to $58^{\circ}C$, power consumption of the heat pump was an upturn from 11.5 kW to 15 kW and high pressure rose from 1,617 kPa to 2,450 kPa. Cooling COP had the trend that the higher the ground temperature at 1.75 m went, the lower the COP went. The COP was 2.7 at ground temperature at 1.75 m depth of $25.5^{\circ}C$ and 2.0 at the temperature of $33.5^{\circ}C$ and the heat extraction rate from the greenhouse were 28.8 kW, 26.5 kW respectively at the same ground temperature range. 8 hours after the heat pump was operated, the temperature of ground at 60 cm and 150 cm depth buried a geothermal heat exchanger rose $14.3^{\circ}C$, $15.3^{\circ}C$ respectively, but the temperature of ground at the same depth not buried rose $2.4^{\circ}C$, $4.3^{\circ}C$ respectively. The temperature of heat transfer medium fluid fell $7.5^{\circ}C$ after the fluid passed through geothermal heat exchanger and the fluid rejected average 46 kW to the 1.5 m depth ground. It analyzed the geothermal heat exchanger rejected average 36.8 W/m of the geothermal heat exchanger. Fan coil units in the greenhouse extracted average 28.2 kW from the greenhouse air and the temperature of heat transfer medium fluid rose $4.2^{\circ}C$after the fluid passing through fan coil units. It was analyzed the accumulation energy of thermal storage thank was 321 MJ in 3 hours and the rejection energy of the tank was 313 MJ in 4 hours.

TEM investigation of helium bubble evolution in tungsten and ZrC-strengthened tungsten at 800 and 1000℃ under 40keV He+ irradiation

  • I. Ipatova;G. Greaves;D. Terentyev;M.R. Gilbert;Y.-L. Chiu
    • Nuclear Engineering and Technology
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    • v.56 no.4
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    • pp.1490-1500
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    • 2024
  • Helium-induced defect nucleation and accumulation in polycrystalline W and W0.5 wt%ZrC (W0.5ZrC) were studied in-situ using the transmission electron microscopy (TEM) combined with 40 keV He+ irradiation at 800 and 1000℃ at the maximum damage level of 1 dpa. Radiation-induced dislocation loops were not observed in the current study. W0.5ZrC was found to be less susceptible to irradiation damage in terms of helium bubble formation and growth, especially at lower temperature (800 ℃) when vacancies were less mobile. The ZrC particles present in the W matrix pin the forming helium bubbles via interaction between C atom and neighbouring W atom at vacancies. This reduces the capability of helium to trap a vacancy which is required to form the bubble core and, as a consequence, delays, the bubble nucleation. At 1000 ℃, significant bubble growth occurred in both materials and all the present bubbles transitioned from spherical to faceted shape, whereas at 800 ℃, the faceted helium bubble population was dominated in W.

A Study of a Scheme to Assess and Improve ESB-based SOA Applications from the S/W Architecture Perspective (ESB기반 SOA Application에 대한 S/W Architecture 관점의 평가와 개선 방안에 대한 연구)

  • Im, Chol-Hong;Hong, Do-Seok;Choi, Jeong-Joon
    • 한국IT서비스학회:학술대회논문집
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    • 2006.05a
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    • pp.547-554
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    • 2006
  • 국내외적으로 차세대 아키텍처인 SOA에 대한 관심이 높아지고 있으며, 수년 내에 SOA가 일반적인 아키텍처가 될 것으로 전망 되고 있다. 하지만, 여전히 많은 기업들이 막연하게 SOA가 현실화 되기 에는 아직은 많은 위험 요소가 있는 것으로 판단 하고 있다. 본 논문에서는 SOA기반 차세대 Architecture에 대한 시나리오 기반의 정성적, 정량적인 검증을 수행 하여 아키텍처적인 관점에서 타당성을 제시하고, SOA를 실제 구축 프로젝트에 적용하기 위한 방안을 제시하여, 이론 및 사상적인 측면에서 벗어나 현실화된 Architecture로써 SOA가 도입 될 수 있도록 하고자 한다.

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Analysis of Lattice constants change for study of W-C-N Diffusion (W-C-N 확산방지막의 격자상수 변화 분석을 통한 특성 연구)

  • Kim, Soo-In;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.17 no.2
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    • pp.109-112
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    • 2008
  • The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.