• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.383-388
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• 2006

The varistor properties and DC accelerated aging characteristics of $ZnO-Pr_{6}O_{11}-CoO-Cr_{2}O_{3}$-based varistors were investigated at different $La_{2}O_3$ contents in the range of $0{\sim}2.0mol%$. The varistors doped with 0.5 mol% $La_{2}O_3$ exhibited good nonlinearity, with 81.6 in nonlinear coefficient. Increasing the $La_{2}O_3$ content further to 2.0 mol% caused the sintered density to increase, and the breakdown voltage and nonlinearity to decrease abruptly. The varistors with 0.5 mol% $La_{2}O_3$ exhibited the high electrical stability, with -1.14% in variation rate of breakdown voltage, -3.7% in variation rate of nonlinear coefficient, and +100% in variation rate of leakage current for specified DC accelerated aging stress condition (95% of breakdown voltage/$150^{\circ}C$/24 h).

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.71-75
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• 2004

This paper proposes a new bandgap reference (BGR) circuit which takes advantage of a cascode current mirror biasing to reduce the V$\_$ref/ variation, and sizing technique, which utilizes two related ratio numbers k and N, to reduce the PNP BJT area. The proposed BGR is designed and fabricated on a test chip with a goal to provide a reference voltage to the 10 bit A/D(4-4-4 pipeline architecture) converter of the CMOS Active Pixel Sensor (APS) imager to be used in X-ray imaging. The basic temperature variation effect on V$\_$ref/ of the BGR has a maximum delta of 6 mV over the temperature range of 25$^{\circ}C$ to 70$^{\circ}C$. To verify that the proposed BGR has radiation hardness for the X-ray imaging application, total ionization dose (TID) effect under Co-60 exposure conditions has been evaluated. The measured V$\_$ref/ variation under the radiation condition has a maximum delta of 33 mV over the range of 0 krad to 100 krad. For the given voltage, temperature, and radiation, the BGR has been satisfied well within the requirement of the target 10 bit A/D converter.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.7
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• pp.1176-1185
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• 2016

This paper proposes a new output voltage control scheme based on the SoC variation of the battery energy storage system (BESS) applicable for the stand-alone DC microgrid. The proposed control scheme provides relatively lower variation of the DC grid voltage than the conventional droop method. The performance of proposed control scheme was verified through computer simulations for a typical stand-alone DC microgrid which consists of BESS, photo-voltaic (PV) panel, engine generator (EG), and DC load. A scaled hardware prototype for the stand-alone DC microgrid with DSP controller was set up in the lab, and the proposed control algorithm was installed in the DSP controller. The test results were compared with the simulation results for performance verification and actual system implementation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.1
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• pp.19-28
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• 2000

The parallel inverter is widely utilized because of its fault-tolerance capability, high-current output at constant voltages and system modularity. The conventional paralled inverter usually employes an active and reactive power control or a frequency and voltage droop control. However, these approaches have the disadvantages that the response time of parallel inverter control is slow against load and system parameter variation to calculate active, reactive power, frequency and voltage. This paper describes novel control scheme for equalization of output power between the parallel connected inverters. The proposed scheme has a fast power balance control response, a simplicity of implementation, and inherent peak current limiting capability since it employes a instantaneous current/voltage control with output voltage and current balance and output voltage regulation. A design procedure for the proposed parallel inverter controller is presented. Futhermore, the proposed constrol scheme is verified through the simulation in various cases such as the system parameter variation, the control parameter variation and the nonlinear load condition.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.722-725
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• 2013

In this work, we have been analyzed the characteristics of ReRAM with different annealing condition and temperature. The ReRAM devices with top electrode=150nm, bottom electrode=150nm, oxide thickness=70nm and annealing temperature=$500^{\circ}C$, $850^{\circ}C$ have been used in characterization. The Set/Reset voltage, sensing window and resistivity have been characterized. From the measurement results, the Set/Reset voltage and sensing window have been enhanced as the annealing temperature has been increased. But it has been decreased as the temperature performance has been increased. In case of the annealing temperature=$850^{\circ}C$, the variation of Set/Reset voltage was lower than that of other condition. But the variation of sensing window was the lowest when the annealing temperature was $500^{\circ}C$. With considering the variation of Set/Reset voltage and sensing window, the devices annealed at $850^{\circ}C$ showed the best performance to ReRAM.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.4
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• pp.529-536
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• 2015

With the growing interest of microgrid all over the world, many studies on microgrid operation are being carried out. The battery energy storage system(BESS) is a key equipment for effective operation of the microgrid. In this paper, we analyze the characteristics of the charge and discharge output voltage of the battery and the characteristics of the life-span variation and the investment cost when the state-of-charge (SOC) changes. The formulas to represent the quality of the charge and discharge output voltage of the battery and the economics due to the life-span variation and the investment cost according to DOD(Depth of Discharge) are derived. The methodology of determining the proper operation ranges of the battery SOC with varying the weighting of the quality of its charge and discharge output voltage of the battery and the economics due to its life-span variation and the investment cost is presented using these formulas.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1248-1251
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• 1995

This paper reports some results of an experimental investigation of planar double injection magnetic sensors. The threshold voltage proved to be very sensitive to an applied magnetic field. The magnitude and direction of the threshold voltage variation depends on the field strength and its orientation with respect to the conduction chennel. The positively-directed field pushes the carriers into the bulk causing an increase in the threhold voltage. These results seem to agree with a path modulation due to Lorentz force. The application of a negative field causes a negative variation, which is dependent on the surface recombination velocity of the silicon-$SiO_2$ interface.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.239-243
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• 2003

In this paper, an angle diversity wireless optical detector is realized that can receive the optical signal at an angle from 0 to 360 degrees. Eight photodiodes constitute an angle diversity receiver, and in order to reduce the voltage variation with the incident angle, the optical detector is stabilized with a digital potentiometer. In a stabilized state, the voltage variation is kept within 1/10 of maximum voltage. This configuration is very useful in constructing an omni-directional receiver in a wireless optical interconnection.

• Journal of IKEEE
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• v.15 no.2
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1405-1410
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• 2009

Output voltage of a DC/DC power converter system is likely to be distorted if variable loads exist in the output terminal. This paper presents a new disturbance observer(DOB) approach to maintain a robust regulation of the output voltage of a boost type DC/DC converter. Unlike the buck-type converter case, the regulation problem of the boost converter is very complicated by the fact that, with respect to the output voltage to be regulated, the system is non-minimum phase. Owing to the non-minimum phase property the classical DOB approach has not been applied to the boost converter. Motivated by a recent result on the application of DOB to non-mimimum phase system, an output feedback control law is proposed by using a parallel feedforward compensator. Simulation results using the Simulink SimPowerSystems prove the performance of the proposed controller against load variation.