• Transactions on Semiconductor Engineering
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• 제2권2호
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• pp.10-14
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• 2024

This paper presents a circuit design aimed at generating the required reference voltage and temperature sensor voltage in conjunction with an ADC, utilizing the current generated by temperature characteristics of BJT components for sensor data conversion. Additionally, two control methods are introduced to reduce the standard deviation of the circuit, resulting in over a ten-fold decrease in standard deviation. The proposed circuit occupies an area of 0.057mm² and was implemented using 55nm RF process.

• Proceedings of the KIEE Conference
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• 대한전기학회 2008년도 추계학술대회 논문집 전기설비전문위원
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• pp.61-63
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• 2008

We established a system to evaluate the ratio error and phase angle error of electronic voltage transformer using high voltage capacitance bridge and standard capacitors. The uncertainty of evaluation system is about 0.005% in ratio error and 1.5 min in phase angel error.

• The Transactions of The Korean Institute of Electrical Engineers
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• 제67권11호
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• pp.1570-1575
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• 2018

The increased penetration of PV is impacting on grid operation and in particular the voltage within the local grid can be significantly influenced by the various PV systems. The increased penetration of PV is impacting on grid operation and in particular the voltage within the local grid can be significantly influenced by the various PV systems. This paper describes domestic technical standard of Photovoltaic(PV) PCS(Power Conditioning Systems)- Characteristics of the utility interface. Especially protective function test items of 1) Output overvoltage protection test, 2) Output undervoltage protection test, 3) Frequency rise protection test, 4) Frequency fall protection test, 5) System voltage's momentary interruptions, 6) System voltage distortion capability test. Therefore in this paper protective function test item of facilities evaluation detailed standards for new renewable energy, small, medium and large photovoltaic inverter standard is studied and analyzed and finally full tested by PV inverter performance function.

• The Transactions of the Korean Institute of Electrical Engineers C
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• 제53권3호
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• pp.137-142
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• 2004

A voltage transformer(VT) used for the estabilishment of high voltage national standard, has generally ratio error and phase angle error. Both errors in VT depend critically on values of external burden of VT used. Both ratio ewer and phase angle error in existence of the external burden is calculated. These calculated values are very well consistent with the experimental result. The principle and the measurement method of VT in our institute are also explained.

• Journal of information and communication convergence engineering
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• 제7권2호
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• pp.215-218
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• 2009

In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.

• The Transactions of The Korean Institute of Electrical Engineers
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• 제65권1호
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• pp.179-193
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• 2016

In power quality monitoring, voltage fluctuation is one of the power quality problems, which cause light flickers. To determine the flicker severity, the flicker meter concept was developed in an IEC 61000-4-15 standard. Generally, voltage fluctuations are described as an amplitude modulation(AM). The flicker meter of IEC 61000-4-15 as an international standard for flicker measurement recommends square demodulation method to detect flicker signals from voltage fluctuation signals. This paper suggests a new effective method using filter bank to detect and estimate flicker signals, which do not need square demodulation. For the accurate detection of flicker signals, the filter bank is designed with a full consideration of the spectrum characteristics of voltage fluctuation signals described as AM. The frequency and magnitude of the detected flicker signals are estimated using recursive method. Computer simulations were performed on synthesized signals to prove validity of the proposed method.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1165-1167
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• 2007

Delta doping method can separate the threshold voltage control region from the charge transport region in a-Si TFT, whereby the threshold voltage of a TFT could be modified. Threshold voltage could be changed by delta doping, while field effect mobility was estimated to be 80% of that of standard TFT.

• Proceedings of the KIEE Conference
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• 대한전기학회 2003년도 하계학술대회 논문집 A
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• pp.500-502
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• 2003

This paper reviews calculating of induced voltage onto a communication line from 22.9kV-Y Distribution Lines. The coexistence of both power line and communication line in parallel generates the induction of significant longitudinal voltage in the weak current line. In order to evaluate a precise induced voltage, this paper indicated some problems about coefficient and numerical formula. It also presents some induced voltage production technology standard application.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제19권4호
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• pp.903-908
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• 2015

This paper has analyzed threshold voltage shift for doping profile of asymmetric double gate(DG) MOSFET. Ion implantation is usually used in process of doping for semiconductor device and doping profile becomes Gaussian distribution. Gaussian distribution function is changed for projected range and standard projected deviation, and influenced on transport characteristics. Therefore, doping profile in channel of asymmetric DGMOSFET is affected in threshold voltage. Threshold voltage is minimum gate voltage to operate transistor, and defined as top gate voltage when drain current is $0.1{\mu}A$ per unit width. The analytical potential distribution of series form is derived from Poisson's equation to obtain threshold voltage. As a result, threshold voltage is greatly changed by doping profile in high doping range, and the shift of threshold voltage due to projected range and standard projected deviation significantly appears for bottom gate voltage in the region of high doping concentration.

• The Transactions of the Korean Institute of Electrical Engineers P
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• 제57권4호
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• pp.412-416
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• 2008

We have developed the calibration technique of the VT comparator using nonreactive standard resistors, which evaluates both accuracy and linearity of the VT comparator by comparing experimental values with theoretical values. The correction values of VT comparator obtained by using both our method and wide ratio error VT are consistent within the expanded uncertainty. Furthermore the specification for ratio error of VT comparator have been revaluated.