• 제목/요약/키워드: voltage standard

검색결과 979건 처리시간 0.02초

정류방식에 따른 장치의 정확도와 출력 파형의 비교 (Comparison of Accuracy and Output Waveform of Devices According to Rectification Method)

  • 이인자
    • 대한방사선기술학회지:방사선기술과학
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    • 제41권6호
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    • pp.603-610
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    • 2018
  • This study examined the following: accuracy of the exposure conditions in the inverter device and three-phase device; output waveform over the exposure conditions; and average and standard deviation of the output waveform. After assessing whether the dose corresponding to the theoretical dose was presented, the following conclusions were obtained: 1. The accuracy of the tube voltage(kVp) and tube current(mA) exposure time(sec) was within the tolerable level prescribed in Korea's Safety Management Standards. In the error, Inverter device was large the tube voltage and exposure time, the three-phase device was large the tube current. 2. In terms of the output waveform of the exposure conditions and the average and standard deviation of the output waveform, the higher tube voltage and larger tube current resulted in greater standard deviation in pulsation. Moreover, the standard deviation of pulsation was shown to be greater in the inverter device than the three-phase device; there was also greater standard deviation in the inverter device considering the exposure time. 3. Regarding the exposure conditions over the output dose, all linearity showed the coefficient of variation which had an allowable limit of error within 0.05. Although the output dose ratio for the inverter device was 1.00~1.10 times no difference that of the three-phase device, there was almost no difference in dose ratio between the tube currents.

The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • 제10권2호
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    • pp.200-204
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    • 2012
  • This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.

22.9 kV-Y 계통에서 지락고장이 인체 및 저압설비의 안전에 미치는 영향 (Effects of Ground Faults on the Safety of Persons and Low-voltage Installations in 22.9 kV-Y Distribution Systems)

  • 김한수;정재희;강계명
    • 조명전기설비학회논문지
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    • 제22권1호
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    • pp.141-148
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    • 2008
  • 본 논문에는 22.9 kV-Y 배전계통의 1선 지락고장이 인체의 안전 및 저압설비의 보호에 대한 실험적 결과를 기술하였다. 새로이 제정된 KS C IEC 60364 규격군에 따른 고압 충전도체가 대지에 접촉되는 지락고장에 의한 위험전압과 저압기기의 스트레스전압을 평가하기 위해서 22.9[kV] 중성점 다중접지계통에 대한 실증실험을 수행하였다. 실험결과로부터 KS C IEC 60364 규격군을 기존의 국내배전계통에 적용할 때 부합되지 않는 중대한 문제점을 도출하였으며, 22.9 kV-Y 다중접지와 수용가설비접지를 공용하는 공통접지계통에서 발생하는 지락고장에 의한 일시적 과전압에 대한 효과적인 보호대책을 제시하였다. 결국 22.9 kV-Y계통과 저압설비를 공통접지로 하는 경우 인체와 저압설비의 안전을 위한 효과적인 보호대책의 구현에는 등전위본딩이 중요한 필수적 요건임이 밝혀졌다.

제주행원 풍력발전단지의 전압품질 및 연계기준 적합성 분석 (Voltage quality and Network Interconnection Standard Suitability in Jeju-Hangwon Wind Power Generation Farm)

  • 김세호;김일환;허종철
    • 한국태양에너지학회 논문집
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    • 제26권2호
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    • pp.53-59
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    • 2006
  • The number of wind generation installations are growing substantially in Jeju, Korea. Many of these installations are significant in size and directly connected to the distribution system. Utility grid interconnection standards for interconnecting non-utility distributed generation systems are essential to both power system company and generation company. These interconnection standards are important to utilities, customers, wind generation manufactures and nation. In this paper, it is investigated the voltage quality and the suitability of Jeju-Hangwon wind power generation farm by network interconnection technology standard.

조셉슨 전압 표준을 위한 극저온(4.2K) X-밴드 HEMT 발전기의 설계 (Design of cryogenic(4.2K) X-band HEMT oscillator for josephson voltage standard)

  • 이문규;남상욱;엄경환;김규태
    • 전자공학회논문지D
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    • 제35D권3호
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    • pp.1-10
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    • 1998
  • A new oscillator configuration is presented and tested for Josephson voltage standard operated at the cryogenic(4.2K) temperature. Features of active devices are investigated in aspects of 1/f noise, output power, and current collapse at low temperature. The output power of oscillator is optimized by a nonlinear design approach called Harmonic Two Signal Method(HTSM). The embedding newworks of the generalized six oscillators with tow loads are derived. A HEMT oscilliator is designed in X-Band for the Josephson voltage standard and tested at room and cryogenic(4.2K) temperatures. Oscillation frequency, output power, C/N ratio, and fequency stability are compared at room and low temperatures.

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잡음평형도와 측정회로에 관한 연구 (A Study on the Degree of Line Balance to Noise and its Measurement Circuits)

  • 여상근;김정태
    • 정보통신설비학회논문지
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    • 제9권2호
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    • pp.35-41
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    • 2010
  • The balance coefficients between telecommunication lines are specified in the technical standard and the power induction computation method varies in the order of 100 times in magnitude according to the amount of impedance. The results of actual balance measurements, differing from time to time with the measurement circuit or increasing proportionally as the induction voltage increases, appeared as a measurement error because of not using the standard measurement circuit. This article investigates such errors and proposes the use of a standard balance measurement circuit and a measurement device impedance under the domestic notification standard and the ITU-T international standard.

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CIM 기반의 실시간 전압안정도 해석 시스템 구축 (CIM-Based System For Real-Time Voltage Stability Analysis)

  • 이성우;장문종;서동완;남궁원
    • 조명전기설비학회논문지
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    • 제27권10호
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    • pp.41-49
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    • 2013
  • There is a wide variety of system and applications in the power system. However, they have compatibility issues because they use different data standard and communication method. With the introduction of the smart grid, power system has been grow and diversified. Therefore power system need to be compatible with each other and the interoperability between applications is increasingly important. Thus, the IEC established IEC61970 and CIM Standard data exchange model for interoperability and system integration. Server-Client system was constructed which using CIM HSDA(Part4), a standard communication model, presented in IEC 619710. Also, self-developed real-time voltage stability analysis application and contingency analysis application was used. CIM HSDA was used for data input and real-time analysis. Tolerance of result which is in the range of allowable derived by Perform real-time voltage stability and contingency analysis of Jeju power system, and then compare it's result with PSS/E result.

저전압 전원용 서지보호장치 철도 규격의 개선방안 (Improvement Plans of Railway standards for Surge Protective Devices used in Low-voltage Power circuits)

  • 정용철;김언석;이재호;조봉관;김재철
    • 조명전기설비학회논문지
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    • 제16권2호
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    • pp.90-97
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    • 2002
  • 본 논문에서는 철도 시스템에서 사용하는 저압 전원용 서지보호장치(surge protective devices) 규칙의 성능평가 항목 및 성능개선 방안에 대하여 고찰하였다. 먼저 철도시스템 환경과 관련된 전자기장해(electromagnetic interference) 현상을 검토하였다. 그리고 국제규격인 IEC 및 IEEE와 평가항목 및 펑가방법 등을 비교 검토하였다. 검토 결과 국내 철도관련 규격은 국제규격과 비교하여 비교하여 발견하였다. 개선방안으로 서지 보호소자 단위의 시험은 삭제하고, 규격 종류는 전원용과 신호용으로 분리하며, 서지 파형은 국제적으로 인정된 것을 사용하도록 제안하였다. 철도용 저압 서지보호장치에 대해 서지제한전압 측정 및 서지 수명시험을 국제규격에 따라 시험한 결과 만족스러운 결과를 얻었다.

The Effect of Microstructure Nonuniformity on the Electrical Characteristics of ZnO Varistors with $Al_2$O$_3$ doping

  • Han, Se-Won;Cho, Han-Goo
    • KIEE International Transactions on Electrophysics and Applications
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    • 제3C권4호
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    • pp.140-145
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    • 2003
  • The influence of microstructure nonuniformity on the electrical characteristics of ZnO varistors was analyzed with the added amount of $Al_2$O$_3$ dopants. $Al_2$O$_3$ doping can effectively inhibit grain growth. When $Al_2$O$_3$ content is in the range between 0-0.1 %, the average grain size and the standard deviation decrease quickly and the grain growth is strongly inhibited. Therefore, it is possible to increase the microstructure uniformity by accurate addition of $Al_2$O$_3$ to the ZnO varistor. The breakdown voltage increases with the decrease of standard deviation. The greater the uniformity of the Zno varistor means the higher the global breakdown voltage. The $Al_2$O$_3$ dopants having about 0-0.023 wt% content can effectively improve the voltage ratio, and the voltage ratio reaches a minimum value of 2.32 at an $Al_2$O$_3$ content of 0.005 wt%.