• 반도체공학회 논문지
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• 제2권2호
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• pp.10-14
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• 2024

본 논문은 BJT 소자의 온도 특성에 의해 생성되는 전류를 활용하여 ADC 와 함께 센서의 정보를 변환하는 과정에서 필요한 참조 전압(Reference Voltage)과 온도센서 전압을 하나의 증폭기에서 생성하고자 하는 목적에 따라 설계하는 회로를 제안한다. 이와 함께 회로의 표준 편차를 줄이기 위한 두개의 컨트롤 방식이 추가되어 10 배 이상의 표준 편차를 감소시키는 결과를 얻게 된다. 제안하는 회로의 면적은 0.057mm² 이며 55nm RF 공정을 활용하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 추계학술대회 논문집 전기설비전문위원
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• pp.61-63
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• 2008

We established a system to evaluate the ratio error and phase angle error of electronic voltage transformer using high voltage capacitance bridge and standard capacitors. The uncertainty of evaluation system is about 0.005% in ratio error and 1.5 min in phase angel error.

• 전기학회논문지
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• 제67권11호
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• pp.1570-1575
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• 2018

The increased penetration of PV is impacting on grid operation and in particular the voltage within the local grid can be significantly influenced by the various PV systems. The increased penetration of PV is impacting on grid operation and in particular the voltage within the local grid can be significantly influenced by the various PV systems. This paper describes domestic technical standard of Photovoltaic(PV) PCS(Power Conditioning Systems)- Characteristics of the utility interface. Especially protective function test items of 1) Output overvoltage protection test, 2) Output undervoltage protection test, 3) Frequency rise protection test, 4) Frequency fall protection test, 5) System voltage's momentary interruptions, 6) System voltage distortion capability test. Therefore in this paper protective function test item of facilities evaluation detailed standards for new renewable energy, small, medium and large photovoltaic inverter standard is studied and analyzed and finally full tested by PV inverter performance function.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권3호
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• pp.137-142
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• 2004

A voltage transformer(VT) used for the estabilishment of high voltage national standard, has generally ratio error and phase angle error. Both errors in VT depend critically on values of external burden of VT used. Both ratio ewer and phase angle error in existence of the external burden is calculated. These calculated values are very well consistent with the experimental result. The principle and the measurement method of VT in our institute are also explained.

• Journal of information and communication convergence engineering
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• 제7권2호
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• pp.215-218
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• 2009

In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.

• 전기학회논문지
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• 제65권1호
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• pp.179-193
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• 2016

In power quality monitoring, voltage fluctuation is one of the power quality problems, which cause light flickers. To determine the flicker severity, the flicker meter concept was developed in an IEC 61000-4-15 standard. Generally, voltage fluctuations are described as an amplitude modulation(AM). The flicker meter of IEC 61000-4-15 as an international standard for flicker measurement recommends square demodulation method to detect flicker signals from voltage fluctuation signals. This paper suggests a new effective method using filter bank to detect and estimate flicker signals, which do not need square demodulation. For the accurate detection of flicker signals, the filter bank is designed with a full consideration of the spectrum characteristics of voltage fluctuation signals described as AM. The frequency and magnitude of the detected flicker signals are estimated using recursive method. Computer simulations were performed on synthesized signals to prove validity of the proposed method.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1165-1167
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• 2007

Delta doping method can separate the threshold voltage control region from the charge transport region in a-Si TFT, whereby the threshold voltage of a TFT could be modified. Threshold voltage could be changed by delta doping, while field effect mobility was estimated to be 80% of that of standard TFT.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 A
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• pp.500-502
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• 2003

This paper reviews calculating of induced voltage onto a communication line from 22.9kV-Y Distribution Lines. The coexistence of both power line and communication line in parallel generates the induction of significant longitudinal voltage in the weak current line. In order to evaluate a precise induced voltage, this paper indicated some problems about coefficient and numerical formula. It also presents some induced voltage production technology standard application.

• 한국정보통신학회논문지
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• 제19권4호
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• pp.903-908
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• 2015

본 연구에서는 비대칭 이중게이트(double gate; DG) MOSFET의 채널 내 도핑분포함수의 변화에 따른 문턱전압이동 현상에 대하여 분석하였다. 반도체소자를 도핑시킬 때는 주로 이온주입법을 사용하며 이때 분포함수는 가우스분포를 나타내고 있다. 가우스분포함수는 이온주입범위 및 분포편차에 따라 형태를 달리하며 이에 따라 전송특성도 변화하게 된다. 그러므로 비대칭 DGMOSFET의 채널 내 도핑분포함수의 변화는 문턱전압에 영향을 미칠 것이다. 문턱전압은 트랜지스터가 동작하는 최소한의 게이트전압이므로 단위폭 당 드레인 전류가 $0.1{\mu}A$ 흐를 때 상단 게이트전압으로 정의하였다. 문턱전압을 구하기 위하여 해석학적 전위분포를 포아송방정식으로부터 급수형태로 유도하였다. 결과적으로 도핑농도가 증가하면 도핑분포함수에 따라 문턱전압은 크게 변하였으며 특히, 고 도핑 영역에서 하단 게이트전압에 따라 이온주입범위 및 분포편차에 의한 문턱전압의 변화가 크게 나타나는 것을 알 수 있었다.

• 전기학회논문지P
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• 제57권4호
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• pp.412-416
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• 2008

We have developed the calibration technique of the VT comparator using nonreactive standard resistors, which evaluates both accuracy and linearity of the VT comparator by comparing experimental values with theoretical values. The correction values of VT comparator obtained by using both our method and wide ratio error VT are consistent within the expanded uncertainty. Furthermore the specification for ratio error of VT comparator have been revaluated.