• Title/Summary/Keyword: voltage standard

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Comparison of Accuracy and Output Waveform of Devices According to Rectification Method (정류방식에 따른 장치의 정확도와 출력 파형의 비교)

  • Lee, In Ja
    • Journal of radiological science and technology
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    • v.41 no.6
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    • pp.603-610
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    • 2018
  • This study examined the following: accuracy of the exposure conditions in the inverter device and three-phase device; output waveform over the exposure conditions; and average and standard deviation of the output waveform. After assessing whether the dose corresponding to the theoretical dose was presented, the following conclusions were obtained: 1. The accuracy of the tube voltage(kVp) and tube current(mA) exposure time(sec) was within the tolerable level prescribed in Korea's Safety Management Standards. In the error, Inverter device was large the tube voltage and exposure time, the three-phase device was large the tube current. 2. In terms of the output waveform of the exposure conditions and the average and standard deviation of the output waveform, the higher tube voltage and larger tube current resulted in greater standard deviation in pulsation. Moreover, the standard deviation of pulsation was shown to be greater in the inverter device than the three-phase device; there was also greater standard deviation in the inverter device considering the exposure time. 3. Regarding the exposure conditions over the output dose, all linearity showed the coefficient of variation which had an allowable limit of error within 0.05. Although the output dose ratio for the inverter device was 1.00~1.10 times no difference that of the three-phase device, there was almost no difference in dose ratio between the tube currents.

The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.10 no.2
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    • pp.200-204
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    • 2012
  • This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.

Effects of Ground Faults on the Safety of Persons and Low-voltage Installations in 22.9 kV-Y Distribution Systems (22.9 kV-Y 계통에서 지락고장이 인체 및 저압설비의 안전에 미치는 영향)

  • Kim, Han-Soo;Chung, Jae-Hee;Kang, Kae-Myung
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.1
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    • pp.141-148
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    • 2008
  • This paper presents experimental results on the safety of persons and protection of low-voltage equipments of the sub-station due to a single-phase ground fault in 22.9 kV-Y distribution system. In order to evaluate the hazard voltages and the stress voltage of the low-voltage(LV) equipment due to faults between high-voltage systems and earth based on the newly prescribed KS C IEC 60364 standard series, the verification tests in a 22.9[kV] neutral multiple grounding system were carried out. From the experimental results, we introduce serious problems causing some discomfort when applying KS C IEC 60364 standard series to the existing domestic distribution system and the effective protective measures against temporary overvoltages due to a ground fault in the common grounding which is combined the 22.9 kV-Y grounding and the customer's installation grounding are proposed. As a consequence, it was found that the equipotential bonding is an important prerequisite for the effectiveness of the protective measures for the safety of persons and LV equipment in the combined 22.9 kV-Y and low-voltage grounding system.

Voltage quality and Network Interconnection Standard Suitability in Jeju-Hangwon Wind Power Generation Farm (제주행원 풍력발전단지의 전압품질 및 연계기준 적합성 분석)

  • Kim, Se-Ho;Kim, Eel-Hwan;Huh, Jonhg-Chul
    • Journal of the Korean Solar Energy Society
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    • v.26 no.2
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    • pp.53-59
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    • 2006
  • The number of wind generation installations are growing substantially in Jeju, Korea. Many of these installations are significant in size and directly connected to the distribution system. Utility grid interconnection standards for interconnecting non-utility distributed generation systems are essential to both power system company and generation company. These interconnection standards are important to utilities, customers, wind generation manufactures and nation. In this paper, it is investigated the voltage quality and the suitability of Jeju-Hangwon wind power generation farm by network interconnection technology standard.

Design of cryogenic(4.2K) X-band HEMT oscillator for josephson voltage standard (조셉슨 전압 표준을 위한 극저온(4.2K) X-밴드 HEMT 발전기의 설계)

  • 이문규;남상욱;엄경환;김규태
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.3
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    • pp.1-10
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    • 1998
  • A new oscillator configuration is presented and tested for Josephson voltage standard operated at the cryogenic(4.2K) temperature. Features of active devices are investigated in aspects of 1/f noise, output power, and current collapse at low temperature. The output power of oscillator is optimized by a nonlinear design approach called Harmonic Two Signal Method(HTSM). The embedding newworks of the generalized six oscillators with tow loads are derived. A HEMT oscilliator is designed in X-Band for the Josephson voltage standard and tested at room and cryogenic(4.2K) temperatures. Oscillation frequency, output power, C/N ratio, and fequency stability are compared at room and low temperatures.

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A Study on the Degree of Line Balance to Noise and its Measurement Circuits (잡음평형도와 측정회로에 관한 연구)

  • Yeo, Sang-Kun;Kim, Chong-Tae
    • Journal of The Institute of Information and Telecommunication Facilities Engineering
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    • v.9 no.2
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    • pp.35-41
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    • 2010
  • The balance coefficients between telecommunication lines are specified in the technical standard and the power induction computation method varies in the order of 100 times in magnitude according to the amount of impedance. The results of actual balance measurements, differing from time to time with the measurement circuit or increasing proportionally as the induction voltage increases, appeared as a measurement error because of not using the standard measurement circuit. This article investigates such errors and proposes the use of a standard balance measurement circuit and a measurement device impedance under the domestic notification standard and the ITU-T international standard.

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CIM-Based System For Real-Time Voltage Stability Analysis (CIM 기반의 실시간 전압안정도 해석 시스템 구축)

  • Lee, Sung-Woo;Jang, Moon-Jong;Seo, Dong-Wan;Namkoong, Won
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.27 no.10
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    • pp.41-49
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    • 2013
  • There is a wide variety of system and applications in the power system. However, they have compatibility issues because they use different data standard and communication method. With the introduction of the smart grid, power system has been grow and diversified. Therefore power system need to be compatible with each other and the interoperability between applications is increasingly important. Thus, the IEC established IEC61970 and CIM Standard data exchange model for interoperability and system integration. Server-Client system was constructed which using CIM HSDA(Part4), a standard communication model, presented in IEC 619710. Also, self-developed real-time voltage stability analysis application and contingency analysis application was used. CIM HSDA was used for data input and real-time analysis. Tolerance of result which is in the range of allowable derived by Perform real-time voltage stability and contingency analysis of Jeju power system, and then compare it's result with PSS/E result.

Improvement Plans of Railway standards for Surge Protective Devices used in Low-voltage Power circuits (저전압 전원용 서지보호장치 철도 규격의 개선방안)

  • 정용철;김언석;이재호;조봉관;김재철
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.16 no.2
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    • pp.90-97
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    • 2002
  • In this paper we study the performance test items and improvement plans of surge protective devices for low-voltage power circuits used in railway system. Above of all, the sources of electromagnetic interference in railway system are researched. And then we compared domestic railway standard with IEC and IEEE standards far the test items and methodologies of surge protective devices. Through the investigations, we found that the domestic standard is behind in the number of test items and methods on surge protective devices. As the countermeasures, we suggest removing component tests of surge protective devices, separating standards for power and signal standards, and using international surge waveform. In applying to domestic railway surge protective devices, surge limiting voltage measuring and surge endurance tests by international standard methods are good result.

The Effect of Microstructure Nonuniformity on the Electrical Characteristics of ZnO Varistors with $Al_2$O$_3$ doping

  • Han, Se-Won;Cho, Han-Goo
    • KIEE International Transactions on Electrophysics and Applications
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    • v.3C no.4
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    • pp.140-145
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    • 2003
  • The influence of microstructure nonuniformity on the electrical characteristics of ZnO varistors was analyzed with the added amount of $Al_2$O$_3$ dopants. $Al_2$O$_3$ doping can effectively inhibit grain growth. When $Al_2$O$_3$ content is in the range between 0-0.1 %, the average grain size and the standard deviation decrease quickly and the grain growth is strongly inhibited. Therefore, it is possible to increase the microstructure uniformity by accurate addition of $Al_2$O$_3$ to the ZnO varistor. The breakdown voltage increases with the decrease of standard deviation. The greater the uniformity of the Zno varistor means the higher the global breakdown voltage. The $Al_2$O$_3$ dopants having about 0-0.023 wt% content can effectively improve the voltage ratio, and the voltage ratio reaches a minimum value of 2.32 at an $Al_2$O$_3$ content of 0.005 wt%.