• Journal of Power Electronics
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• v.10 no.1
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• pp.9-13
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• 2010

This paper proposes an input-series-output-parallel connected ZVS full bridge converter with interleaved control for photovoltaic power conditioning systems (PV PCS). The input-series connection enables a fully modular power-system architecture, where low voltage and standard power modules can be connected in any combination at the input and/or at the output, to realize any given specifications. Further, the input-series connection enables the use of low-voltage MOSFETs that are optimized for a very low RDSON, thus, resulting in lower conduction losses. The system costs decrease due to the reduced current, and the volumes of the output filters due to the interleaving technique. A topology for a photovoltaic (PV) dc/dc converter that can dramatically reduce the power rating and increase the efficiency of a PV system by analyzing the PV module characteristics is proposed. The control scheme, consisting of an output voltage loop, a current loop and input voltage balancing loops, is proposed to achieve input voltage sharing and output current sharing. The total PV system is implemented for a 10-kW PV power conditioning system (PCS). This system has a dc/dc converter with a 3.6-kW power rating. It is only one-third of the total PV PCS power. A 3.6-kW prototype PV dc/dc converter is introduced to experimentally verify the proposed topology. In addition, experimental results show that the proposed topology exhibits good performance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.3
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• pp.672-677
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• 2013

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.811-814
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• 2012

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.552-556
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• 2002

The microstructure and electrical characteristics of A~C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $1130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6mm/min, respectively, were investigated. In the microstructure, A~C's ZnO varist-ors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase$(Zn_{2.33}Sb_{0.67}O_4)$ Bi-rich $phase(Bi_{2}O_{3})$, wholly. Varistor voltage of A~C's ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B < C's ZnO varistors. C's ZnO varistor exhibited good characteristics that nonlinear exponent is 31.70. Leakage current of A~C's ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

• International Journal of Advanced Culture Technology
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• v.3 no.1
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• pp.120-128
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• 2015

In this paper, Residential roof top photovoltaic system with 9.9 kW design is proposed. The system composed of 200 Watts solar array 33 panels connecting in series 10 strings and parallels 3 strings which have maximum voltage and current are 350 V and 23.8 A. The 10 kW sinusoidal grid-connected inverter with window voltage about 270-350 is selected to convert and transfer DC Power to AC Power at PCC (Point of Common Coupling) of power system following to utility standard. However the impact of fluctuation and uncertainty of weather condition of PV may decrease the voltage stability and voltage collapse of power system. In order to solve this problem the energy storage such 120 V 1200 Ah battery bank and 30 kVAR capacitor are designed for voltage stability control. The other expensed for installing the system such battery charger, cable, accessories and maintenance cost are concerned. The economic analysis by using investment from money loan with interest about 7% and use own money which loss income of deposit about 3% are calculated as 671,844 and 547,044 for PV system with energy storage and non energy storage respectively. The solar energy from PV is about 101,616 Bath per year which evaluated by using the value of $5kWh/m^2/day$ from average peak sun hour (PSH) of the Thailand and 6.96 Bath/kWh of Feed in Tariff Incentive. The payback periods of four scenarios are proposed follow as i) PV system with energy storage and use loan money is 15 years ii) PV system with no energy storage and use loan money is 10 years iii) PV system with energy storage and use deposit money is 9 years iv) PV system with energy storage and use deposit money is 7 years. In addition, the other scenarios of economic analysis such no FIT support and other type of economic analysis such NPV and IRR are proposed in this paper.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.5
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• pp.713-718
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• 2014

DC urban railway power system consists of DC power network and AC power network. The DC power network supplies electric power to railway vehicles and the AC power network supplies electric power to station electric equipment. Recently, because of power consumption reduction and peak load shaving, intelligent measurement of regenerative energy and renewable energy adapted on DC urban railway is required. For this reason, DC smart metering system for DC power network shall be developed. Therefore, in this paper, DC voltage sensor, current sensor, and DC smart meter were developed and evaluated by performance test. DC voltage sensor was developed for measuring standard voltage range of DC urban railway, and DC current sensor was developed as hall effect split core type in order to install in existing system. DC smart meter possesses function of general intelligent electric power meter, such as measuring electricity and wireless communication etc. And, DC voltage sensor showed average 0.17% of measuring error for 2,000V/50mA, and current sensor showed average 0.21% of measuring error for ${\pm}2,000V/{\pm}4V$ in performance test. Also DC smart meter showed maximum 0.92% of measuring error for output of voltage sensor and current sensor. In similar environment for real DC power network, measuring error rate was under 0.5%. In conclusion, accuracy of DC smart metering system was confirmed by performance test, and more detailed performance will be verified by further real operation DC urban railway line test.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.486-487
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• 2006

The authors have studied on the application of IEC 60364-4-44 to Korean electrical installations of buildings from 2004 sponsored by Korean ministry of commerce, industry and energy and the test field is established in K.E.R.I. (Korea Electrotechnology Research Institute). This paper presents the summary results of establishment of test field and analysis for the application of IEC 60364 in Korea. IEC 60364-4-44 provides rules for the protection against the effects of conducted and radiated disturbances on electrical installations. Especially this standard deals with the protection of low voltage facility against the ground fault in the high voltage side of power distribution system. Many countries define the regulations on the use and production of electrical facilities based on their own power system and technical references which are considered to be suitable for them. The background of circuit of IEC 60364-4-44 is based on the ungrounded system as most of European countries. However, since Korean electric power distribution system is based on multi-grounding system different from European system, it is necessary to evaluate or prove the effect of the IEC 60364-4-44 for introducing and applying it to the domestic grounding system as a Korean standard. This paper presents the establishment of test field to get background data to introduce the IEC 60364-4-44 and to evaluate the standard is applicable to domestic rule for the protection against ground fault through the related test

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.2
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• pp.45-52
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• 2009

The off-state impedance of LED signal head is greater than that of a traditional bulb signal head, and the traffic controller has inherent off-state output leakage current. These two characteristics make the field trouble and reduce signal safety when the LED signal head is installed with traffic controller. In this Paper, a complement method of the LED signal head and traffic controller local standard (220vac line voltage) for improving signal safety is suggested. The point of designed complement method is to reduce the output leakage current of the traffic controller under 3mA, to increase the voltage feedback threshold to $70{\pm}5V$, and to make LED signal head maintain off-state in 0-95vac with 10Kohm maximum impedance.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.181-181
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• 2012

The microwave probe for measuring plasma density is widely used for its advantages: First, it is not affected by the reactive gas. Second, it can measure local plasma parameters such as plasma density, plasma potential and plasma temperature. Third, it is simple and robust. A cut-off probe is the one of the most promising microwave probe. Recently, Kim et al. reveals the physics of the cut-off probe but the effect of the sheath on the determination of the plasma density is not explained. In this presentation, for taking account of sheath effects on determination of plasma density from the cut-off peak, a simplified circuit modeling and an E/M simulation are conducted. The results show that occupation ratio of sheath volume between two tips of the cut-off probe and subsequence pressure condition mainly change position of the cut-off peak with respect to plasma frequency. Magnitude of relative voltage taken on the impedance of sheath and the impedance of bulk plasma can explain this effect. Furthermore, effects of gap size, tip radius, and tip length ware revealed based on above analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.321-328
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• 2008

In this paper, variable gain amplifier(VGA) with a gain slope controller has been proposed and verified by circuit simulations and measurements. The proposed VGA has a gain control, gain slope switch and variable gain range. The input source coupled pair with diode connected load is used for VGA gain stage. The gain slope controller with switch can control VGA gain slope. The proposed VGA is fabricated in $0.18{\mu}m$ CMOS process for multi -standard wireless receiver. The proposed two stage VGA consumes min. 2.0 mW to max. 2.6 mW in gain control range and gives input IP3 of -3.77 dBm and NF of 28.7 dB at 1.8 V power supply under -25 dBm, 1 MHz input. The proposed VGA has 37 dB(-16 dB $\sim$ 21 dB) variable gain range, and 8 dB gain range control per 0.3 V control voltage, and can provide variable gain, positive and negative gain slope control, and gain range control. This VGA characteristics provide design flexibility in multi-standard wireless receiver.