• Journal of the Korea institute for structural maintenance and inspection
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• v.15 no.3
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• pp.116-124
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• 2011

In this study, a new method to estimate the bridge deflection is developed by using Wireless Tilt Sensor. Most of evaluations of structural integrity, it is very important to measure the geometric profile, which is a major factor representing the global behavior of civil structure, especially bridges. In the past, Because of the lack of appropriate methods to measure the deflection curve of bridges on site, the measurement of deflection had been done restrictly within just a few discrete points along the bridge. Also the measurement point could be limited to locations installed with displacement transducers. So, in this study, the deflection of the structure was measured by wireless tilt sensor instead of LVDT(Linear Variable Differential Transformer). Angle change of tilt sensor shows structural behavior by the change of the resistor values which is presented to voltage. Moreover, the maximum deflection was calculated by changing the deflection angle which was calculated as V(measured voltage) ${\times}$F(factor) to deflection. The experimental tests were carried out to verify the developed deflection estimation techniques. Because the base of tilt measuring is the gravity, uniform measurement is possible independent of a measuring point. Also, measuring values were showed very high accuracy.

• Membrane Journal
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• v.30 no.1
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• pp.38-45
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• 2020

Although Lithium metal battery (LMB) has a very large theoretical capacity, it has a critical problem such as formation of dendrite which causes short circuit and short cycle life of the LMB. In this study, PDMS/GO composite with evenly dispersed graphene oxide (GO) nanosheets in poly (dimethylsiloxane) (PDMS) was synthesized and coated into a thin film, resulting in the effect that can physically suppress the formation of dendrite. However, PDMS has low ion conductivity, so that we attained improved ion conductivity of PDMS/GO thin film by etching technic using 5wt% hydrofluoric acid (HF), to facilitate the movement of lithium (Li) ions by forming the channel of Li ions. The morphology of the PDMS/GO thin film was observed to confirm using SEM. When the PDMS/GO thin film was utilized to lithium metal battery system, the columbic efficiency was maintained at 87.4% on average until the 100^th cycles. In addition, voltage profiles indicated reduced overpotential in comparison to the electrode without thin film.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.8
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• pp.340-346
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• 2002

Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, $Al_2O_3$, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties $Ta_2O_{5}$ MIM capacitor structure Processed by $O_2$ RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in $600^{\circ}C$ annealing under the $O_2$ RTA and the formation of preferentially oriented-$Ta_2O_{5}$ in 650, $700^{\circ}C$ annealing and the AES depth profile showed $O_2$ RTA oxidation effect gives rise to the $O_2$ deficientd into the new layer. The leakage current density respectively, at 3~1l$\times$$10_{-2}$(kV/cm) were $10_{-3}$~$10_{-6}$(A/$\textrm{cm}^2$). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then $Ta_2O_{5}$ thin films obtained by $O_2$ reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the $O_2$ RTA oxidation temperature.

• Analytical Science and Technology
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• v.13 no.4
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• pp.504-510
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• 2000

The impurity profiles from the raw materials of glycyrrhizin were performed by the high performance liquid chromatography (HPLC)/electrospray ionization (ESI)- mass spectrometry (MS). For the HPLC experiment, a $C_{18}$($3.9{\times}300mm$, $10{\mu}m$) column was used and the mobile phase was acetic acid/$H_2O$ (1:10):acetonitrile=3:2 with a flow rate of 0.8 ml/min. The effluent was splitted into the ratio of 50:1 and went into the ESI-MS. Three to six impurities were found and informed of the identification of the structure of the impurities by ESI-MS. And the structures of impurities were suggested to a hydroxy-glycyrrhizin which is added with hydroxy group (-OH) in the glycyrrhetic acid moiety and a reduced-glycyrrhizin which the position of 12 of the glycyrrhetic acid moiety is reduced. The purities of the standard materials were about 90%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.393-400
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• 2017

For comparison to the Li-ion battery, evaluating a thermal battery must consider additional variables. The first one is the temperature difference between the battery and its unit cell. Thermal batteries and their unit cells have a temperature difference that is caused by the thermal battery activation mechanism and its shape. The second variable is the electrochemical reaction steps. Most Li-ion batteries have a constant electrochemical reaction at the electrode, and battery voltage is affected when the concentration of Li ions is changed. However, a thermal battery has several steps in its electrochemical reaction, and each step has a different potential. In this study, we used unit cell discharge tests based on interpolating a 4D lookup table to estimate the performance of a thermal battery. From the test results, we derived an estimation algorithm by interpolating the table, which is queried from specified profile groups. As a result, we found less than a 5 percent difference between estimation and experiment at the 1.3 V cut-off time.

• Applied Microscopy
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• v.25 no.2
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• pp.73-79
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• 1995

The oxidation of silicon wafers is an essential step in the fabrication of semiconductor devices. It is known to induce degradation of electrical properties and lattice strain of Si substrate from thermal oxidation process due to charged interface and thermal expansion mismatch from thermally grown SiO, film. In this study, convergent beam electron diffraction technique is employed to directly measure the lattice strains in Si(100) and $4^{\circ}$ - off Si(100) substrates with thermally grown oxide layer at $1200^{\circ}C$ for three hours. The ratios of {773}-{973}/{773}-{953} Higher Order Laue Zone lines were used at [012] zone axis orientation. Lattice parameters of the Si substrate as a function of distance from the interface were determined from the computer simulation of diffraction patterns. Correction value for the accelerating voltage was 0.2kV for the kinematic simulation of the [012]. HOLZ patterns. The change in the lattice strain profile before and after removal of oxide films revealed the magnitudes of intrinsic strain and thermal strain components. It was shown that $4^{\circ}$ -off Si(100) had much lower intrinsic strain as surface steps provide effective sinks for the free Si atoms produced during thermal oxidation. Thermal strain in the Si substrate was in compression very close to the interface and high concentration of Si interstitials appeared to modify the thermal expansion coefficient of Si.

• Journal of the Korean Electrochemical Society
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• v.18 no.2
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• pp.51-57
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• 2015

We report the effect of the impurities including water and bromide in the propylmethylpyrrolidinium bis(trifluoromethanesulfonyl)imide (PMPyr-TFSI) on the electrochemical performance of lithium ion batteries. The several kinds of PMPyr-TFSI electrolytes with different amount of impurities are applied as the electrolyte to the cell with the high potential electrode, $LiNi_{0.5}Mn_{1.5}O_4$ spinel. It is found that the impurities in the electrolytes cause the detrimental effect on the cell performance by tracing the cycleability, voltage profile and Coulombic efficiency. Especially, the polarization and Coulombic efficiency go to worse by both impurities of water and bromide, but the cycleability was not highly influenced by bromide impurity unlike the water impurity.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.10
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• pp.1795-1803
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• 2011

Advanced Metering Infrastructure (AMI) is one of the important components to form a smart-gird, which is an advanced power system by combining the power system with the communication systems. This AMI makes it possible to exchange information between operators and consumers for the efficient and reliable operation of the power system through a smart meter or a In-Home Display. However, according to the increase of the demanded information such as the power quality, the accurate load-profile, and the billing data to help customers manage their power consumption, it is necessary to gather more accurate analytical data from each house appliances and transfer it to the smart meter for synthesizing the information and controlling each loads. In this paper, the development of the wireless data acquisition device for the individual load data metering, which is connected with the smart meter for advanced functions, is proposed. AVR, a kind of microcontroller, and Bluetooth are used and integrated into the proposed the wireless data acquisition device to transmit the detailed power data (voltage and current) to the smart meter. To verify the effectiveness of the proposed system, a hardware experiment is carried out including the confirmation of the possibility for providing the more various information by applying analysis algorithms to the obtained data. Also, the application structure of the wireless data acquisition device to gather the data from the various house appliances is presented.

• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.196-206
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• 2001

Real temperature profiles of a planar chromel-alumel mutli-junction thermal converter(TC 1) were measured by thermal image. Temperature profiles as a function of input power of thermal converters(TC 1${\sim}$TC 6) were simulated by 3-dimensional ANSYS program based on finite element method. Temperature difference between the hot junction and the cold junction for TC 1 was smallest and largest for TC 6 and correspondingly, he voltage response for TC 1 and TC 6 showed the smallest value of 3.09 mV/mW and the largest value of 4.03 mV/mW, respectively.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.