• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1547-1549
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• 1996

The electrical and optical switching characteristics of gold-doped silicon p-i-n diodes have been investigated. The device shows a dark switching voltage of about 500 V. The switching voltage decreases rapidly when the illumination level is increased. The differential sensitivity of optical gating over linear region is $d(V_{Th}/V_{Tho})/dP_{Ph}$=0.25/uW. The turn-on delay time and the turn-on rise time decrease with increasing optical pulse power. The turn-off delay and the fall time are negligible.

• The Korean Journal of Physiology and Pharmacology
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• v.7 no.5
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• pp.267-273
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• 2003

We have investigated the effect on inducing substate(s) of positively charged residues replaced in position 172 of the second transmembrane domain in murine inward rectifier potassium channels, formed by stable or transient transfection of Kir2.1 gene in MEL or CHO cells. Single channel recordings were obtained from either cell-attached patches or inside-out patches excised into solution containing 10 mM EDTA to rule out the effect of $Mg^{2+}$ on the channel gating. The substate(s) could be recorded with all mutants D172H, D172K and D172R. The unitary current-voltage (I-V) relation was not linear with D172H at $pH_i$ 6.3, whereas the unitary I-V relation was linear at $pH_i$ 8.0. The relative occupancy at $S_{LC}$ was increased from 0.018 at $pH_i$ 8.0 to 0.45 at $pH_i$ 5.5. In H-N dimer, that was increased from 0.016 at $pH_i$ 8.0 to 0.23 at $pH_i$ 5.5. The larger the size of the side chain or $pK_a$ with mutants (D172H, D172K and D172R), the more frequent the transitions between the fully open state and substate within an opening. The conductance of the substate also depended upon the pKa or the size of the side chain. The relative occupancy at substate $S_{LC}$ with monomer D172K (0.50) was less than that in K-H dimer (0.83). However, the relative occupancy at substate with D172R (0.79) was similar to that with R-N dimer (0.82). In the contrary to ROMK1, positive charge as well as negative charge in position 172 can induce the substate rather than block the pore in murine Kir2.1. The single channel properties of the mutant, that is, unitary I-V relation, the voltage dependence of the mean open time and relative occupancy of the substates and the increased latency to the first opening, explain the intrinsic gating observed in whole cell recordings.

• Journal of the Institute of Convergence Signal Processing
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• v.3 no.3
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• pp.70-75
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• 2002

This paper proposes new single stage power factor correction (PFC) full bridge converter. The proposed converter is combined previous ZVS full bridge DC/DC converter with two inductors, two diodes, two magnetic coupling transformer for PFC. This process of power is isolated from the source and also regulate stable DC output voltage in a category. In this topology, the voltage stress of main switches is reduced by zero voltage switching. Moreover, the proposed converter doesn't need active PFC switch and auxiliarly circuits, like control and gating board, so it could decrease the size and cost and increase the efficiency.

• Proceedings of the KIEE Conference
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• 2000.11a
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• pp.139-141
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• 2000

High voltage direct current(HVDC) transmission system uses the phase controlled rectifier triggered by means of IPC(individual phase control) or EPC(equidistant pulse control). Most HVDC system has adopted EPC method that can solve the harmonic instability problem of IPC method in weak power system. But EPC has inherent indirect synchronizing problem requiring the closed loop control. This paper presents the new gate pulse generating method for 12-pulse HVDC converter, which combines IPC with EPC. Simulation and test results are presented. The basic concept is that it generates the gating pulse for 12-pulse converter by synthesizing the internal phase reference using the frequency and phase information of a sin91e phase voltage. To ensure the reliability of the external phase input, Potential transformer that detects the phase voltage has redundancy. Using fault detecting algorithm the healthy input is always guaranteed. And the frequency compensation function was reinforced.

• Journal of Electrical Engineering and Technology
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• v.11 no.3
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• pp.662-669
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• 2016

In this work, nonlinear control of a three-phase shunt active power filter (SAPF) has been studied and compared to classical control based on proportional integral regulator. The control strategy is based on the direct current method using sliding mode control (SMC), where the aim is to regulate the average voltage across the dc bus of the inverter. Details are given for the control algorithm; the controller is comprised of a current loop which utilizes a hysteresis controller to generate the gating signals for the switching devices, and a nonlinear controller based on SMC law which is different from classical laws based on error between reference and measured output voltage of the inverter. Sliding surface applied in this work contains the whole of state variables, in order to ensure full control of the system behavior in the presence of disturbances that affect the supply source, the load parameters or the reference value. The designed controller offers advantage that it can gives the improvement of dynamic and static performances in cases of large disturbances. A comparison of the effects of PI control and SMC on the APF response in steady stat, under line variations, load variations, and different component variations is performed.

• International Journal of Control, Automation, and Systems
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• v.6 no.5
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• pp.660-669
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• 2008

This paper presents a new carrier based pulse-width modulation (PWM) method for matrix converters. By using the concept of average over one switching period, the modulation algorithm and the required equations are derived to synthesize the desired output voltage and to achieve the controlled input power factor. The proposed method uses a continuous carrier and the predetermined duty ratio signals to directly generate the gating signals and, thus, is referred to as "direct duty ratio PWM (DDPWM)". The feasibility and validity of the proposed method were verified by simulation and experiment.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.110-114
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• 1990

Double Injection Switching Devices consist of $P^+$ and $n^+$ contact separated by a near intrinsic Semiconductor region containing deep trap. A V-Groove Double Injection Switching Devices were proposed for high voltage performance and Optical gating scheme. The experimental result to demonstrate the feasibility of these devices (Planar type, V-Groove type, Injection Gate mode, Optical Gate mode) for practical application are described.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1088-1091
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• 1992

Programmed PWM(Pulse Width Modulated) generation techniques eliminating several low order harmonics have been widely used in the inverter circuit which produces minimum current ripple, reduced torque pulsation and thereby improves overall system performance. However, the applications of the programmed PWM technique are limited to CVCF(Constant Voltage Constant Frequency) applications and various motor drives. Although the programmed PWM produces a lower harmonic distorted waveform than the carrier modulated PWM, real-time programming is not possible because of the complicated calculation required for the gating signal. In this paper, a new programmed PWM technique named TAM (time averaging model) is developed to compensate for the demerits of the conventional programmed PWM technique with moderate harmonic distortion. Computer simulations are performed to verify the performance of the proposed algorithm.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2000.11a
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• pp.94-98
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• 2000

This paper describes an application of the partial discharge measuring method in operating transformer. In the operating transformer, the useful PD signal may be superimposed by radio intereference voltage and impulse shaped noise signals generated by external corona or power electronics. In this paper, initial investigations after connecting the PD measuring system to the terminals of the measuring impedance showed a very high noise level of 3,700pC due to sinusoidal interferences. In order to reject these noises, this paper applied RIV and band-pass filters and noise gating method. The resulting measuring sensitivity was improved from 3,700pC to 160pC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.38-42
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• 2001

This paper describes an application of the on line partial discharge measurement method in operating transformer. In the operating transformer, the partial discharge signal may be superimposed by radio intereference voltage(RIV) and pulse shaped noise signals generated by external corona. The partial discharge quantity showed about 3,800pC due to very high sinusoidal interferences at the measuring impedance terminal of the transformer bushing tap. In order to reject these noises, this paper applied RIV filter, band-pass filters and noise gating method. The resulting measuring sensitivity was improved from 3,800pC to 160pC.