• 제목/요약/키워드: voltage gating

검색결과 73건 처리시간 0.044초

간극결합채널의 개폐기전 (Mechanism for Gating of Gap Junction Channel.)

  • 오승훈
    • 생명과학회지
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    • 제14권5호
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    • pp.882-890
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    • 2004
  • 간극결합(gap junction)은 이웃하는 두 세포사이에 형성된 막 구조물로 이를 통하여 각종 이온들과 여러 가지 분자들이 통과한다. 일반적으로 알려진 세포의 이온채널(예를 들어 $Na^{+}$ 이온채널과$K^+$이온채널)과 구별하여 두 세포사이에 형성된 간극결합을 세포간 채널(intercellular channel)이라고도 부른다. 간극결합채널(gap junction channel)은 단순히 수동적으로 열려있는 통로가 아니라 여러 가지 자극 즉 pH, 칼슘이온(calcium ion), 전압(voltage), 그리고 화학적인 변형(주로 인산화, phosphorylation)에 의해서 개폐(gating, opening and closing)가 조절되는 이온채널이다. 그 가운데서도 전압에 의한 간극결합채널 개폐 변화가 가장 많이 연구되었다. 세포안과 바깥에 형성된 전압차이(membrane potential, $V_m$) 보다는 주로 두 세포 사이에 형성된 전압차이(transjunctional voltage, $V_j$)에 의해서 간극결합채널은 민감하게 반응한다. 본 총설에서는 간극결합채널의 일반적인 특성을 정리해보고 전압-의존적인(voltage-dependent) 채널개폐에 관한 기전을 논의하고자 한다.

반도체 스위치 기반 고반복 펄스전원 (High Repetitive Pulsed Power Supply Based on Semi-Conductor Switches)

  • 장성록;안석호;류홍제;김종수;임근희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1023_1024
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    • 2009
  • In this paper, a novel 10kV, 50A, 50kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 12 IGBT to generate maximum 10kV output pulse and 10kW full bridge phase-shifted zero voltage switching converter to charge DC capacitor voltage. Each IGBTs are sustain the 830V of capacitor voltage at turn off interval. By turn on the each IGBT for the same time it gives the path for the series connection of charged capacitor. From above turn on and off procedure, high voltage repetitive pulse is applied to the load. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, specially designed gate power circuit using full bridge inverter and pulse transformer is developed to generate IGBT gating signal.

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Design of 32 bit Parallel Processor Core for High Energy Efficiency using Instruction-Levels Dynamic Voltage Scaling Technique

  • Yang, Yil-Suk;Roh, Tae-Moon;Yeo, Soon-Il;Kwon, Woo-H.;Kim, Jong-Dae
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권1호
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    • pp.1-7
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    • 2009
  • This paper describes design of high energy efficiency 32 bit parallel processor core using instruction-levels data gating and dynamic voltage scaling (DVS) techniques. We present instruction-levels data gating technique. We can control activation and switching activity of the function units in the proposed data technique. We present instruction-levels DVS technique without using DC-DC converter and voltage scheduler controlled by the operation system. We can control powers of the function units in the proposed DVS technique. The proposed instruction-levels DVS technique has the simple architecture than complicated DVS which is DC-DC converter and voltage scheduler controlled by the operation system and a hardware implementation is very easy. But, the energy efficiency of the proposed instruction-levels DVS technique having dual-power supply is similar to the complicated DVS which is DC-DC converter and voltage scheduler controlled by the operation system. We simulate the circuit simulation for running test program using Spectra. We selected reduced power supply to 0.667 times of the supplied power supply. The energy efficiency of the proposed 32 bit parallel processor core using instruction-levels data gating and DVS techniques can improve about 88.4% than that of the 32 bit parallel processor core without using those. The designed high energy efficiency 32 bit parallel processor core can utilize as the coprocessor processing massive data at high speed.

파워게이팅과 전압레벨조절을 이용하여 누설전류를 줄인 SRAM (A Low Leakage SRAM Using Power-Gating and Voltage-Level Control)

  • 양병도;천유소
    • 대한전자공학회논문지SD
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    • 제49권8호
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    • pp.10-15
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    • 2012
  • 본 논문에서는 파워게이팅과 전압레벨조절을 이용하여 누설전류를 줄인 SRAM을 제안하였다. 제안된 파워게이팅 기법은 데이터를 저장하지 않은 메모리 셀 블록의 전력공급을 차단함으로써 누설전류를 크게 감소시키고, 제안된 전압레벨조절 기법은 데이터가 저장된 메모리 셀 블록의 접지전압을 올림으로써 누설전류를 줄여준다. $4K{\times}8$비트 SRAM 칩은 $0.13{\mu}m$ CMOS 공정으로 제작되었고 VDD=1.2V로 동작하였다. 메모리 사용률이 0~100%에 대하여, 동작 모드에서의 누설전류는 $1.23{\sim}9.87{\mu}W$이고 대기 모드에서 누설전류는 $1.23{\sim}3.01{\mu}W$였다. 대기 모드 동안에, 제안된 SRAM의 누설전류는 기존의 SRAM의 12.5~30.5%로 감소하였다.

Asn-Linked Glycosylation Contributes to Surface Expression and Voltage-Dependent Gating of Cav1.2 Ca2+ Channel

  • Park, Hyun-Jee;Min, Se-Hong;Won, Yu-Jin;Lee, Jung-Ha
    • Journal of Microbiology and Biotechnology
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    • 제25권8호
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    • pp.1371-1379
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    • 2015
  • The Cav1.2 Ca2+ channel is essential for cardiac and smooth muscle contractility and many physiological functions. We mutated single, double, and quadruple sites of the four potential Asn (N)-glycosylation sites in the rabbit Cav1.2 into Gln (Q) to explore the effects of Nglycosylation. When a single mutant (N124Q, N299Q, N1359Q, or N1410Q) or Cav1.2/WT was expressed in Xenopus oocytes, the biophysical properties of single mutants were not significantly different from Cav1.2/WT. In comparison, the double mutant N124,299Q showed a positive shift in voltage-dependent gating. Furthermore, the quadruple mutant (QM; N124,299,1359,1410Q) showed a positive shift in voltage-dependent gating as well as a reduction of current. We tagged EGFP to the QM, double mutants, and Cav1.2/WT to chase the mechanisms underlying the reduced currents of QM. The surface fluorescence intensity of QM was weaker than that of Cav1.2/WT, suggesting that the reduced current of QM arises from its lower surface expression than Cav1.2/WT. Tunicamycin treatment of oocytes expressing Cav1.2/WT mimicked the effects of the quadruple mutations. These findings suggest that Nglycosylation contributes to the surface expression and voltage-dependent gating of Cav1.2.

IGBT 기반 고압 펄스전원장치 (Pulsed Power Modulator based on IGBTs)

  • Ryoo, H.J.
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2007년도 추계학술대회 논문집
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    • pp.43-46
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    • 2007
  • In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important for series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used. Proposed scheme has lots of advantages such as long lifecyle, compact size, flat topped pulse forming, small weight, protection for arc, high efficiency and flexibility to generate various kinds of pulse output.

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60kV, 300A, 3kHz 펄스전원 장치 설계 (Design of 60KV, 300A, 3kHz Pulse Power Supply)

  • 류홍제;장성록;김종수;임근희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.904-905
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    • 2008
  • In this paper, a novel 60kV, 300A, 3kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and 15kW series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 830VDC, 300A pulses. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

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IGBT 직렬구동에 의한 60KV 펄스 전원장치 개발 (Development of 60KV Pulse Power Supply using IGBT Stacks)

  • 류홍제;김종수;임근희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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    • pp.917-918
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    • 2006
  • In this paper, a novel new pulse power generatorbased on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is importantfor series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

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Intracellular cAMP-modulated Gate in Hyperpolarization Activated Cation Channels

  • Park, Kyung-Joon;Shin, Ki-Soon
    • Animal cells and systems
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    • 제11권2호
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    • pp.169-173
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    • 2007
  • Hyperpolarization-activated nonselective cation channels (HCNs) play a pivotal role in producing rhythmic electrical activity in the heart and the nerve cells. In our previous experiments, voltage-dependent $Cd^{2+}$ access to one of the substituted cysteines in S6, T464C, supports the existence of an intracellular voltage-dependent activation gate. Direct binding of intracellular cAMP to HCN channels also modulates gating. Here we attempted to locate the cAMP-modulated structure that can modify the gating of HCN channels. SpHCN channels, a sea urchin homologue of the HCN family, became inactivated rapidly and intracellular cAMP removed this inactivation, resulting in about eight-fold increase of steady-state current level. T464C was probed with $Cd^{2+}$ applied to the intracellular side of the channel. We found that access of $Cd^{2+}$ to T464C was strongly gated by cAMP as well as voltage. Release of bound $Cd^{2+}$ by DMPS was also gated in a cAMP-dependent manner. Our results suggest the existence of an intracellular cAMP-modulated gate in the lower S6 region of spHCN channels.

IGBT 직렬구동에 의한 60KV 펄스 전원장치 개발 (Development of 60KV Pulsed Power Supply using IGBT Stacks)

  • Ryoo, Hong-Je;Kim, Jong-Soo;Rim, Geun-Hie;Goussev, G.I.;Sytykh, D.
    • 전기학회논문지
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    • 제56권1호
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    • pp.88-99
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    • 2007
  • In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Because it can generate up to 60kV pulse output voltage without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation and rectangular pulse shape. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge invertor and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.