• Journal of Information Display
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• 제11권4호
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• pp.154-159
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• 2010

Single-sustainer driving is an AC PDP driving scheme to reduce the circuitry by maintaining the sustain electrode at ground level. To date, however, the research on the discharge characteristics in such driving scheme is insufficient. In this study, the panel performance and discharge characteristics of the single-sustainer driving scheme were observed while varying the address electrode condition. In single-sustainer driving, the address electrode is strongly involved in the sustain discharge when the former is maintained at ground level, and the dependence of the luminous efficacy on the sustain voltage is different from that in the conventional driving scheme. The dependence of the luminous efficacy on the sustain voltage appeared similar, however, to that in the conventional driving scheme when the address electrode was floated in single-sustainer driving. In the investigation of the temporal evolution of the sustain discharge using an IICCD camera, it was found that the sustain discharge in single-sustainer driving with a floating address electrode is similar to that in the conventional driving scheme, and the strong plasma formation region was located in the vicinity of the MgO surface, which seems to be related to the lifetime of a PDP with single-sustainer driving. In the investigation of the operation characteristics, the PDP that was operated with a floated address electrode showed a narrower dynamic operation margin, but a longer lifetime was expected.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.429-435
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• 1999

The $SrTiO_3$ thin films were prepared on Ag/TiN-coated and p-type bare Si(100) substrates by r.f. magnetron sputtering deposition technique. The electrical properties of the deposited films were investigated, which controlling deposition parameters such as substrate temperature and film thickness. The electrical properties ofthe $SrTiO_3$ films were measured using the capacitance-voltage(C-V) technique. The thickness dependence of the electrical properties of the $SrTiO_3$ films was analyzed of the connection with the films in series. The substrate affected the crystal structure and texture characteristics of the $SrTiO_3$ films. The resistivity of the film, sandwiched between Al and Ag films was measured, as a function of the temperature.

• Journal of Electrochemical Science and Technology
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• 제2권1호
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• pp.20-25
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• 2011

This work focuses on the behavior of the overpotential increase due to a utilization rise in a molten carbonate fuel cell. The behavior is generally explained by Nernst loss, which is a kind of voltage loss due to the thermodynamic potential gradients in a polarization state due to the concentration distribution of reactant species through the gas flow direction. The evaluation of Nernst loss is carried out with a traditional experimental method of constant gas utilization (CU). On the other hand, overpotential due to the gas-phase mass-transport resistance at the anode and cathode shows dependence on the utilization, which can be measured using the inert gas step addition (ISA) method. Since the Nernst loss is assumed to be due to the thermodynamic reasons, the voltage loss can be calculated by the Nernst equation, referred to as a simple calculation (SC) in this work. The three values of voltage loss due to CU, ISA, and SC are compared, showing that these values rise with increases in the utilization within acceptable deviations. When we consider that the anode and cathode reactions are significantly affected by the gas-phase mass transfer, the behavior strongly implies that the voltage loss is attributable not to thermodynamic reasons, namely Nernst loss, but to the kinetic reason of mass-transfer resistance in the gas phase.

• Transactions on Electrical and Electronic Materials
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• 제9권5호
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• pp.186-192
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• 2008

Cross linked polyethylene (XLPE) insulators are used as insulation in ultra-high voltage electric power cables. This study investigated the electrical properties of XLPE at different temperatures. The electrical properties of the changing tree phenomenon was examined as a function of temperature applied to the electrical conductors by measuring the partial discharge at $25^{\circ}C$ to $80^{\circ}C$ and applied voltages to the electrodes ranging from 1 kV to 40 kV. The activity of the partial discharge was examined at various temperatures using the K-means distribution. The results revealed the specimen at $80^{\circ}C$ to have the lowest inception voltage and breakdown voltage. In addition, the core of clusters was moved $0^{\circ}$ and $180^{\circ}$ at the positive region and $180^{\circ}$ and $360^{\circ}$ in the negative region in the K-means. The distribution of clusters was concentrated on the inception condition and spread out widely at the breakdown voltage.

• 한국산학기술학회논문지
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• 제10권7호
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• pp.1489-1496
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• 2009

비정질 인듐-갈륨-아연 산화물 박막트랜지스터를 모델링 하여서, 능동층의 구조, 두께, 평형상태의 전자밀도에 대응하는 박막트랜지스터의 특성을 연구하였다. 단일 능동층 박막트랜지스터의 경우, 능동층이 얇을 때 높은 전계효과이동도를 보였다. 문턱전압의 절대값은 능동층의 두께가 20 nm일 때 최저치를 보였으며, 문턱전압이하 기울기는 두께에 대한 의존성을 보이지 않았다. 복층구조 능동층의 경우, 하부의 능동층이 높은 평형상태 전자밀도를 가질 때보다 우수한 스위칭 특성을 보였다. 이 경우에도 능동층의 두께가 얇을 때에 높은 전계효과 이동도를 보였다. 높은 평형상태 전자밀도의 능동층의 두께를 증가시키면 문턱전압은 음의 방향으로 이동하였다. 문턱전압이하 기울기는 능동층의 구조에 대하여 특별한 의존성을 보이지 않았다. 이상과 같은 데이터는 산화물반도체 박막트랜지스터 능동층의 구조, 두께, 도핑비율을 최적화함에 효과적으로 사용될 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.171-171
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• 2009

We have investigated dielectric properties depending on temperature and voltage in organic light-emitting diodes using N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-di-amine (TPD) as an hole transport. We analyzed the Cole-Cole plot of TPD. When the voltage is over 3 V, we found that a radius of Cole-Cole plot and $\beta$ increase as the temperature increases to 65 $^{\circ}C$, However, as the over the 65 $^{\circ}C$, those values decrease. Also, when the voltage is below 3 V, a radius of cole-cole plot and $\beta$ increase with the increased temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.93-96
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• 1990

The characteristics of an inverted staggered-type hydrogenated amorphous silicon thin film transistor has been analyzed by employing numerical simulation. The field effect mobility and threshold voltage are characterized as a function of density of deep and tail states and lattice temperature. It has been found that the density of deep states plays an important role of determining the threshold voltage, while the field effect mobility are very sensitive to the slope of band tail states. Also, the numerically temperature dependence of field effect mobility and threshold voltage has been in good agreements with the experimental results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.235-238
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• 1998

In this study, the cymbal actuators with brass and bronze endcap at various endcap thickness were fabricated, and then the displacement vs applied voltage relation and position from the center of endcap relation were investigated The displacement values of all cymbal actuator were measured using laser vibrometer. The displacement of the cymbal actuator was increased linearly with increasing applied voltage. The cymbal actuator with 0.15mm thick brass endcap show approximately 1.3$\mu\textrm{m}$ displacement more than cymbal actuator with uniformly thick bronze endcap. The displacement about 3mm in diameter at the center of the endcap was uniform and rapidly decreased away from 3mm in diameter at the center of the endcap.

• Journal of Magnetics
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• 제15권3호
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• pp.132-137
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• 2010

Plasma etching of $SiO_2$ contact holes was statistically analyzed by a fractional factorial experimental design. The analysis revealed the dependence of the etch rate and DC self-bias voltage on the input factors of the magnetically enhanced reactive ion etching reactor, including gas pressure, magnetic field, and the gas flow rates of $CHF_3$, $CF_4$, and Ar. Empirical models of the DC self-bias voltage and etch rate were obtained. The DC self-bias voltage was found to be determined mainly by the operating pressure and the magnetic field, and the etch rate was related mainly to the pressure and the flow rates of Ar and $CHF_3$.

• 대한전자공학회논문지
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• 제26권9호
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• pp.1375-1380
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• 1989

Mobility reduction parameters are extracted using a method based on the exploitatiion of Id-Vg and Gm-Vg characteristics of short channel n-MOSFETs in strong inversion region at room temperature. It is found that the reduction of the maximum field effect mobility, \ulcornerFE,max, with the channel length is due to i) the difference between the threshold voltage and the gate voltage which corresponds to the maximum transconductance, and ii) the channel length dependence of the mobility attenuation coefficient, \ulcorner The low field mobility, \ulcorner, is found to be independent of the channel length down to 0.25 \ulcorner ofeffective channel length. Also, the channel length reduction, -I, the mobility attenuation coefficient, \ulcorner the threshold voltage, Vt, and the source-drain resistance, Rsd, are determined from the Id-Vg and -gm-Vg characteristics n-MOSFETs.