• 제목/요약/키워드: voltage collapse mechanism

검색결과 5건 처리시간 0.018초

전력계통에서의 전압붕괴 매카니즘에 관한 연구 (A Study on Voltage Collapse Mechanism in Electric Power Systems)

  • 김도형;류헌수;문영현;최병곤;박정도
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 A
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    • pp.171-174
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    • 2001
  • In this paper, an EMM(Equivalent Mechanical Model) is developed to explain the voltage collapse mechanism by reflecting the effects of reactive powers. The proposed EMM exactly represents the voltage instability mechanism described by the system equations. By the use of the EMM model the voltage collapse mechanism has been illustrated by showing the exactness of the results. It is also discussed a system transform in technique to eliminate the resistance component of the Thevenin equivalent impedance for practical applications.

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A Study on Voltage Collapse Mechanism using Equivalent Mechanical Model

  • Kim, Do-Hyung;Ryu, Heon-Su;Lee, Jong-Gi;Moon, Young-Hyun
    • KIEE International Transactions on Power Engineering
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    • 제12A권1호
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    • pp.6-14
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    • 2002
  • In this paper, an EMM(Equivalent Mechanical Model) Is developed to explain the voltage collapse mechanism by reflecting the effects of reactive powers. The proposed EMM exactly represents the voltage instability mechanism described by the system equations. By the use of the EMM model, the voltage collapse mechanism has been illustrated by showing the exactness of the results. The stable region has been investigated with a reactive-power-controlled two-bus system, which shows that special alerts are required when the system operates with leading power factor. It is also discussed a system transform technique to eliminate the resistance component of the Thevenin equivalent impedance for practical applications. Finally, the results adopting the proposed method fur sample systems which were transformed are listed

Investigation of the Voltage Collapse Mechanism in Three-Phase PWM Rectifiers

  • Ren, Chunguang;Li, Huipeng;Yang, Yu;Han, Xiaoqing;Wang, Peng
    • Journal of Power Electronics
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    • 제17권5호
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    • pp.1268-1277
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    • 2017
  • Three-phase pulse width modulation (PWM) rectifiers are usually designed under the assumption of ideal ac power supply and input inductance. However, non-ideal circuit parameters may lead to a voltage collapse of PWM rectifiers. This paper investigates the mechanism of voltage collapse in three-phase PWM rectifiers. An analytical stability boundary expression is derived by analyzing the equilibrium point of the averaging state space model, which can not only accurately locate the voltage collapse boundary in the circuit parameter domain, but also reveal the essential characteristic of the voltage collapse. Results are obtained and compared with those of the trial-error method and the Jacobian method. Based on the analysis results, the system parameters can be divided into two categories. One of these categories affects the critical point, and other affects only the instability process. Furthermore, an effective control strategy is proposed to prevent a vulnerable system from being driven into the instability region. The analysis results are verified by the experiments.

부하의 동특성을 고려한 TCSC에 의한 전압 붕괴의 예방 (Voltage Collapse Protection Considering Dynamics of Load)

  • 조정현;손광명;이상호;박종근;이병하
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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    • pp.110-112
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    • 1995
  • Now days, voltage stability is well recognized as an important problem. It is well known that voltage stability is influenced by the characteristics of load. Up to present, voltage stability researches were done by the static load modeling, but it is needed that the precise analysis by the view point of dynamic load modeling. In this paper, with induction motor as dynamic load, I show the voltage collapse mechanism followed by load increase. Then I propose the protective method of voltage collapse by using TCSC.

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In-situ SiN 패시베이션 층에 따른 AlGaN/GaN HEMTs의 전기적 및 저주파 잡음 특성 (Electrics and Noise Performances of AlGaN/GaN HEMTs with/without In-situ SiN Cap Layer)

  • 최여진;백승문;이유나;안성진
    • 접착 및 계면
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    • 제24권2호
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    • pp.60-63
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    • 2023
  • AlGaN/GaN 이종접합 구조는 이차원 전자 가스층(2-DEG)으로 인해 높은 전자이동도를 갖고 있으며, 넓은 밴드갭을 갖기 때문에 고온에서 높은 항복전압을 갖는 특성을 가지고 있어, 고전력, 고주파 전자 소자로 주목받고 있다. 이러한 이점을 갖고 있음에도 불구하고, 전류 붕괴 등의 다양한 소자 신뢰성에 영향을 주는 인자들이 있기 때문에 이를 해결하고자, 본 논문에서는 금속-유기-화학기상증착법을 이용하여 AlGaN/GaN 이종 접합구조와 SiN 패시베이션 층을 연속 증착시켰다. 이를 통해 HEMTs소자에 SiN패시베이션이 미치는 재료 특성 및 전기적 특성을 분석했으며, 결과를 바탕으로 저주파 잡음 특성을 측정해 소자의 전도 메커니즘 모델과 채널 내의 결함의 원인에 대해서 분석하였다.