• Journal of the Korean Society for Railway
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• v.18 no.6
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• pp.543-551
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• 2015

Quick-hardening track (QHT) is a construction method which is used to change from old ballast track to concrete track. Sufficient time for construction is important, as the construction should be done during operational breaks at night. Most of the time is spent on exchanging the ballast layer. If it is possible to apply the ballast non-exchange type of quick-hardening track, it would be more effective to reduce the construction time and costs. In this paper, pouring materials with high permeability are suggested and a construction method involving a layer separation pouring process considering the void condition is introduced in order to develop ballast non-exchange type of QHT. The separate pouring method can secure the required strength because optimized materials are poured into the upper layer and the lower layer for each void ratio condition. To ensure this process, a rheology analysis was conducted on the design of the pouring materials according to aggregate size, the aggregate distribution, the void ratio, the void size, the tortuosity and the permeability. A polymer series was used as the pouring material of the lower layer to secure the void filling capacity and for adhesion to the fine-grained layer. In addition, magnesium-phosphate ceramic (MPC) was used as the pouring material of the upper layer to secure the void-filling capacity and for adhesion of the coarse-grained layer. As a result of a mechanics test of the materials, satisfactory performance corresponding to existing quick-hardening track was noted.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.529-532
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• 2006

Sn-filled $Co_8Sb_{24}$ skutterudites were synthesized by the encapsulated induction melting process. Single ${\delta}-phase$ was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conductivity of the Sn-filled $Co_8Sb_{24}$. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled $Co_8Sb_{24}$ skutterudite is a highly degenerate semiconductor. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be $z{\leq}0.5$ in the $Sn_zCo_8Sb_{24}$ system.

• Journal of Welding and Joining
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• v.32 no.3
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• pp.68-73
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• 2014

Among through silicon via (TSV) technologies, for replacing Cu filling method, the method of molten solder filling has been proposed to reduce filling cost and filling time. However, because Sn alloy which has a high coefficient of thermal expansion (CTE) than Cu, CTE mismatch between Si and molten solder induced higher thermal stress than Cu filling method. This thermal stress can deteriorate reliability of TSV by forming defects like void, crack and so on. Therefore, we fabricated SiC composite filling material which had a low CTE for reducing thermal stress in TSV. To add SiC nano particles to molten solder, ball-typed SiC clusters, which were formed with Sn powders and SiC nano particles by ball mill process, put into molten Sn and then, nano particle-dispersed SiC composite filling material was produced. In the case of 1 wt.% of SiC particle, the CTE showed a lowest value which was a $14.8ppm/^{\circ}C$ and this value was lower than CTE of Cu. Up to 1 wt.% of SiC particle, Young's modulus increased as wt.% of SiC particle increased. And also, we observed cross-sectioned TSV which was filled with 1 wt.% of SiC particle and we confirmed a possibility of SiC composite material as a TSV filling material.

• Journal of the Korea Institute of Building Construction
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• v.4 no.3
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• pp.93-100
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• 2004

In recent years, it has widely been studied on the light-weight composites for the purpose of the large space and thermal insulation of building structures. The purpose of this study is to evaluate the properties of light-weight composites made by binders as cement, resin and polymer cement slurry. The concrete composites are prepared with various conditions such as polymer-cement ratio, void-filling ratio, type of resin, filler content and light-weight aggregate content, tested for thermal conductivity. From the test results, the thermal conductivity of concrete composites with the binder of cement tends to decrease with increasing polymer-cement ratio, and to increase with increasing void-filling ratio. The thermal conductivity of concrete composites with the binder of resin are markedly affected by the light-weight aggregate content, type of resin and filler content. The composites made by polymer-modified concrete and polymer cement slurry have a good thermal insulation property. From the this study, we can recommend the proper mix proportions for thermal insulation Panel or concrete. Expecially. the thermal conductivity of concrete composites made by polyurethane resin is almost the same as that of the conventional expanded polystyrene resin.

• Journal of the Korean Ceramic Society
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• v.55 no.4
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• pp.352-357
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• 2018

The slip casting process is widely used to make green bodies from ceramic slips into dense compacts with homogeneous microstructure. However, stress may be generated inside the green body during drying, and can lead to cracking and bending during sintering. When starting from the spherical powders with mono-size distribution to make the close packed body, interstitial voids on octahedral and tetrahedral sites are formed. In this research, experiments were carried out with powders of three size types (host powder (H), octahedral void filling powder (O) and tetrahedral void filling powder (T)) controlled for average particle size by milling from two commercial alumina powders. Slips were prepared using three different powder batches from H only, H+O or H+O+T mixed powders. After manufacturing green compacts by solid-casting, compacts were dried at constant temperature and humidity and sintered at $1650^{\circ}C$. Alumina samples fabricated from the multi-sized powder mixture had improved compacted and sintered densities.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.75-75
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• 2010

3D 패키징 기술은 전기소자의 소형화, 고용량화, 저전력화, 높은 신뢰성등의 요구와 함께 그 중요성이 대두대고 있다. 이러한 3D 패키징의 연결방법은 와이어 본딩 또는 플립칩등의 기존의 방법에서 TSV(Through Silicon Via)를 이용하여 적층하는 방법이 주목받고 있다. TSV는 기존의 와이어 본딩과 비교하여 고집적도, 빠른 신호전달, 낮은 전력소비 등의 장점을 가지고 있어 많은 연구가 진행되고 있다. TSV의 세부 공정 중 비아필링(Via filling)기술은 I/O수 증가와 미세피치화에 따른 비아(Via) 직경의 감소 및 종횡비(Via Aspect Ratio)증가로 인해 기존 필링 공정으로는 한계가 있다. 기존의 비아 홀(Via hole)에 금속을 필링하기 위한 방법으로 전기도금법이 많이 사용되고 있으나, 전기도금법은 전기도금액 조성, 첨가제의 종류, 전류밀도, 전류모드 등에 따라 결과물에 큰 차이가 발생되어, 최적공정조건의 도출이 어렵다. 또한 20um이하의 비아직경과 높은 종횡비로 인하여 충진시 void형성등의 문제점이 발생하기도 한다. 본 연구에서는 용융솔더와 진공을 이용하여 비아를 필링시켰다. 이 방법은 관통된 비아가 형성된 웨이퍼 양단에 압력차를 주어, 작은 직경을 갖는 비아 홀의 표면장력을 극복하고, 용융상태의 솔더가 관통된 비아 홀 내부로 필링되는 방법이다. 관통 비아홀이 형성 된 웨이퍼 위에 솔더페이스트를 $250^{\circ}C$이상 온도를 가해 용융상태로 만든 후 웨이퍼 하부에 진공을 형성하여 필링하는 방법과 용융솔더를 노즐을 통하여 위쪽으로 유동시켜 그 위에 비아홀이 형성된 웨이퍼를 접촉하고 웨이퍼 상부에 진공을 형성하여 필링하는 방법으로 실험을 각각 실시하였다. 이 때, 웨이퍼 두께는 100um이하이며 홀 직경은 20, 30um, 웨이퍼 상부와 하부의 진공차는 약 0.02~0.08Mpa, 진공 유지시간은 1~3s로 실시하여 최적 조건을 고찰하였다. 각 조건에 따른 필링 후 단면을 전자현미경(FE-SEM)을 통해 관찰하였다. 실험 결과 0.04Mpa 이상에서 1s내의 시간에 모든 비아홀이 기공(Void)없이 완벽하게 필링되는 것을 관찰하였으며 이 결과는 기존의 방법에 비하여 공정시간을 감소시켜 생산성이 대폭 향상 될 수 있는 방법임을 확인하였다.

• Journal of the Korean Geotechnical Society
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• v.16 no.1
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• pp.167-178
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• 2000

An experimental study on step up filling method is carried out to reinforce the Yano method which is widely used to estimate volume ratio and self-weight consolidation settlement in reclamation area. This method considers actual reclamation construction in which dredged clay is continuously filled and rising of deposit height is presented as a result of volume decrease by height rising and self-weight consolidation. It measured the relationship between filling velocity and deposit rising velocity; calculated the total filling height which is needed to achieve the planned final deposit height, and its solid height and the time which is taken to finish the planned final deposit height; and on the basis of these calculated parameters, predicted the self-weight consolidation and volume change ratio in reclamation construction. Yano method is also used to predict the same conditions. 29.8% in self-weight consolidation, 31.1% in volume ratio, 40% in void ratio and water content is underestimated in Yano method compared to step up filling method.

• Restorative Dentistry and Endodontics
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• v.15 no.2
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• pp.104-114
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• 1990

The purpose of this study was to evaluate the adaptation of root canal filling material to the dentinal wall of root canal and to compare the sealing ability of the root canal filling materials using ultrasonic endodontic instrument with injection-molded thermoplasticized gutta-percha filling method and lateral condensation method. Fifty fresh human single root exlracted for orthodontic treatment, were randomly selected, and instrumented by step-back technique. And then, the teeth were divided into 5 groups according to each root canal filling methods. In the experimental group 1 and group 2, the root canals were filled with gutta perdia cases using ultrasonic instrument with and without sealer. In the experimental group 3 and 4, using jection-moldeed thermoplasticized gutta-percha method by obtul$^{(R)}$ canals were filled with and without sealer. In the control group, the canals were filled with sealer by lateral candensation. And then, 5 teeth of each group were immersed in black Indian ink, decalcified and cleared. The depth of dye penetration into the root canal were evaluated with stereoscope (Reichert Ltd., USA). Among the 5 teeth remaining in each group, the single longituding grooves were made on the labial and lingual root surfaces and then immersed in the liquid nitrogen to fracture the teeth spontaneously without any distortions of gutta-percha. Each specimens were examined with X-650 Scanning Electron Microscope(Hitachi ltd, Japan) to show the adaptation to the canal wall, void, homogenicity of filling material and location of gutta-percha or sealer in the dentinal tubules of the root canal. The observations were as follows : 1. The experimental group 1 showed smaller mean dye penetration than control group, and showed the penetraton of sealer in the dentinal tubules of apical third of the root canal. 2. The experimental group 2 and group 4 showed the penetration of gutta-percha in the dentinal tubules of root canals. 3. The experimental group 1 and group 3 showed less mean dye penetration than the experimental group 2 and group 4. 4. The experimental group 1 and group 2 showed better adaptation of filling materials than control group.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.667-673
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• 2010

Copper filling into TSV (through-silicon-via) and reduction of the filling time for the three dimensional chip stacking were investigated in this study. A Si wafer with straight vias - $30\;{\mu}m$ in diameter and $60\;{\mu}m$ in depth with $200\;{\mu}m$ pitch - where the vias were drilled by DRIE (Deep Reactive Ion Etching) process, was prepared as a substrate. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to reduce the time required complete the Cu filling into the TSV, the PPR (periodic pulse reverse) wave current was applied to the cathode of a Si chip during electroplating, and the PR (pulse-reverse) wave current was also applied for a comparison. The experimental results showed 100% filling rate into the TSV in one hour was achieved by the PPR electroplating process. At the interface between the Cu filling and Ti/ Au functional layers, no defect, such as a void, was found. Meanwhile, the electroplating by the PR current showed maximum 43% filling ratio into the TSV in an hour. The applied PPR wave form was confirmed to be effective to fill the TSV in a short time.