• Proceedings of the KIEE Conference
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1859-1861
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• 2005

The ZnO:Al thin films were prepared on glass by Facing Target Sputtering (FTS) system. We investigated electrical, optical, and structural properties of AZO thin film with sputtering current $0.1[A]{\sim}0.6[A]$. We obtained the lowest resistivity $2.3{\times}10^{-4}[{\Omega}-cm]$ at sputtering current 0.6[A] from the 4-point probe and the strong (002) peak at sputtering current 0.3[A] from the X-ray Diffractometer (XRD ). The optical transmittance of AZO thin films show a very high transmittance of $80{\sim}95%$ in the visible range and exhibit the absorption edge of about 350nm.

• Bulletin of the Korean Chemical Society
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• 제14권6호
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• pp.708-712
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• 1993

The Polymerization of p-chlorophenyl propargyl ether (CPE) was carried out using various transition metal catalysts. The catalytic activity of $MoCl_{5}$-based catalysts was greater than that of $WCl_6$-based catalysts. $MoCl_5$ alone and $MoCl_{5}$-cocatalyst systems polymerized CPE very effectively to give a high yield of poly(CPE). In most cases, the polymer yield was quantitative and the average molecular weight $({\bar{M}}n)$ was in the range of 9,000 and 17,000. The NMR, IR, UV-visible spectra indicated that the present poly(CPE) has a linear conjugated polyene structure having p-chlorophenyl oxymethylene substituent. The poly(CPE) was mostly dark-brown colored powder and was completely soluble in various organic solvents such as chloroform, methylene chloride, THF, chlorobenzene, etc. The X-ray diffraction analysis indicated that the present poly(CPE) is amorphous.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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• pp.97-101
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• 2005

The ZnO:Al thin films were prepared on glass by Facing Target Sputtering (FTS) system. We investigated electrical, optical, and structural properties of AZO thin film with sputter ins current 0.1[A]-0.6[A]. We obtained the lowest resistivity $2.3{\times}\;10^{-4}[{\Omega}-cm]$ at sputtering current 0.6[A] from the 4-point probe and the strong (002) peak at sputtering current 0.3[A] from the X-ray Diffractometer (XRD). The optical transmittance of AZO thin films show a very high transmittance of $80\~95\%$ in the visible range and exhibit the absorpt ion edge of about 350 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제23권4호
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• pp.280-286
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• 2010

We have investigated the influence of rapid thermal annealing (RTA) temperature on properties of Al-doped zinc oxide (AZO) thin films deposited on glass substrate by using radio-frequency magnetron sputtering. The RTA is performed in a nitrogen ambient in the temperature range from 300 to $600^{\circ}C$ for 1 minute in a rapid thermal annealer after growing the AZO thin films. The crystallographic structure and the surface morphology of AZO thin film are measured by using X-ray diffraction, and atomic force microscopy and scanning electron microscopy, respectively. The optical transmittance of the deposited thin films is examined in the wavelength range of 300-1100 nm, where the average transmittance is above the 90% in the visible and near-infrared regions. The optical bandgap is calculated from the Tauc's model, and it shows a significant dependence on the RTA temperature. As for the electrical properties of the thin films, the AZO thin film annealed at $400^{\circ}C$ shows the lowest electrical resistivity of $8.6{\times}10^{-3}{\Omega}cm$ and the Hall mobility of $11.3cm^2$/V-sec. These results suggest that the RTA temperature is an important parameter to influence on the structural, electrical, and optical properties of AZO thin films.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.62.1-62.1
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• 2011

The structural, optical, and electrical properties of Ga-doped ZnO (GZO) thin films on glass substrates grown by radio-frequency(RF) magnetron sputtering were investigated. The flow ratio of Ar was varied as a deposition parameter for growing high-quality GZO thin films. The structural properties and surface morphologies of GZO were characterized by the X-ray diffraction. To analyze the optical properties of GZO, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of GZO thin films were calculated from the measured data. The crystallinity of GZO thin films is improved and the bandgap energy increases from 3.08 to 3.23eV with the increasing Ar flow ratio from 10 to 100 sccm. The average transmittance of the films is over 88% in the visible range. The lowest resistivity of the GZO is $6.215{\times}10^{-4}{\Omega}{\cdot}cm$ and the hall mobility increases with the increasing Ar flow ratio. We can optimize the characteristics of GZO as a transparent electrode for thin film solar cells by controlling Ar flow ratio during deposition process.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.279-283
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• 2014

Al doped ZnO thin films have been deposited by a RF magnetron sputtering technique from a ZnO (2 wt.% $Al_2O_3$) target onto glass substrates heated at temperature ranging from RT to $400^{\circ}C$. X-ray diffraction analysis shows that the deposits have a preferential growth along the c-axis of a hexagonal structure. The full with at half maximum decreases from 0.45 to $0.43^{\circ}$ in the studied temperature range. The root main square surface roughness increases with substrate temperature from 1.89 to 2.67 nm. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is red-shifted with substrate temperature from RT to $400^{\circ}C$. The sheet resistance increases from 92 ohm/sq to 419 ohm/sq when the deposition temperature increases from RT to $400^{\circ}C$. The increment of sheet resistance is caused by lowered carrier concentration resulting from an increase in surface roughness.

• Journal of Korean Ophthalmic Optics Society
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• 제18권4호
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• pp.457-463
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• 2013

To determine the impact of artificial tears which include carboxymethyl cellulose on a hydrogel contact lenses. Methods: A contact lenses made of the cross-linking agent, EGDMA (ethylene glycol dimethacrylate) and HEMA (2-hydroxyethyl methacrylate) and with added NVP (n-vinyl-2-pyrrolidone) and MMA (methyl methacrylate) was evaluated for water content, refractive index, spectral transmittance and contact angle of produced contact lens. Results: The physical properties of the sampled copolymerized polymers showed that water content, refractive index, visible ray transmittance and contact angle were in the range of 26.61%~48.58%, 1.422~1.455, 80.8%~91.4% and $33.93^{\circ}{\sim}65.70^{\circ}$, respectively. In addition, after soaking with artificial tears, the water content, refractive index and contact angle were in the range of 24.46%~48.25%, 1.422~1.457, 77.0%~91.0% and $37.25^{\circ}{\sim}77.33^{\circ}$, respectively. The changes of the physical property depending on hydration time and showed an increase of refractive index and contact angle, decrease of water content and visible ray transmittance. Conclusions: Artificial tears which include carboxymethyl cellulose sodium which is used as a wetting agent influenced water content, refractive index, contact angle and spectral transmittance of a hydrogel contact lenses.

• Journal of radiological science and technology
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• 제28권1호
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• pp.9-12
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• 2005

In this study, film type radiation sensor tips are fabricated for remote sensing of X or g-ray with inorganic scintillators and plastic optical fiber. The visible range of light from the inorganic scintillator that is generated by X and g-ray is guided by the plastic optical fiber and is measured by optical detector and power-meter. It is expected that the fiber-optic radiation sensor which is possible to be developed based on this study is used for remote, fast and exact sensing of X or g-ray because of its characteristics such as very small size, light weight and no interference to electromagnetic fields.

• Journal of Radiation Industry
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• 제6권2호
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• pp.139-145
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• 2012

Gold nanoparticles (GNPs) have led to the development of a new field in the diagnosis and treatment of diseases such as cancer. An efficient synthesis of gold nanoparticles within the range of 8~57 nm was established by ${\gamma}-ray$ irradiation. The good point of a radiation-based method is the production of gold nanoparticles with a higher concentration and narrower size distribution compared with conventional methods. The size of gold nanoparticles was controlled using two methods. : (i) varying the ${\gamma}-ray$ irradiation dose of 10 to 25 kGy and (ii) varying the concentration of $HAuCl_4$ solution from 4 to 40 mM. In addition, the GNPs were radiolabeled using $[^{125}I]NaI$ in a simple and fast manner with high yields. The produced gold nanoparticles were characterized using a transmission electron microscopy (TEM), a UV-visible spectrophotometer, and a radio-TLC imaging scanner. From these results, these radiolabeled GNPs can be applicable for a radioisotope tag of biomolecules.

• Journal of Korean Ophthalmic Optics Society
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• 제13권1호
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• pp.71-76
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• 2008

Purpose: A simple and efficient method to prepare nanocrystalline ZnO thin film with pure strong UV emission on soda-lime-silica glass substrates by low-temperature annealing was improved. Methods: Crystal structural, surface morphological, and optical characteristics of nanocrystalline ZnO thin films deposited on soda-lime-silica glass substrates by prefiring final annealing process at 300$^{\circ}C$ were investigated by using X-ray diffraction analysis, field emission-scanning electron microscope, scanning probe microscope, ultraviolet-visible-near infrared spectrophotometer, and photoluminescence. Results: Highly c-axis-oriented ZnO films were obtained by prefiring at 300$^{\circ}C$. A high transmittance in the visible spectra range and clear absorption edge in the ultra violet range of the film was observed. The PL spectrum of ZnO thin film with a deep near band edge emission was observed while the defect-related broad green emission was nearly quenched. Conclusions: Our work will be possibly adopted to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below 300$^{\circ}C$, in the future.