Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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투입 전류에 따른 Al이 첨가된 ZnO 박막의 전기적, 광학적 특성

  • 조범진 (경원대학교 전기정보공학과) ;
  • 금민종 (경원대학교 전기정보공학과) ;
  • 손인환 (신성 대학 디지털 전기계열) ;
  • 장경욱 (경원전문대학 전자정보과) ;
  • 이원재 (경원전문대학 자동차과) ;
  • 김경환 (경원대학교 전기정보공학과)
  • Published : 2005.09.01
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Abstract

The ZnO:Al thin films were prepared on glass by Facing Target Sputtering (FTS) system. We investigated electrical, optical, and structural properties of AZO thin film with sputter ins current 0.1[A]-0.6[A]. We obtained the lowest resistivity $2.3{\times}\;10^{-4}[{\Omega}-cm]$ at sputtering current 0.6[A] from the 4-point probe and the strong (002) peak at sputtering current 0.3[A] from the X-ray Diffractometer (XRD). The optical transmittance of AZO thin films show a very high transmittance of $80\~95\%$ in the visible range and exhibit the absorpt ion edge of about 350 nm.

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